GB8709629D0 - Deposition of thin films - Google Patents

Deposition of thin films

Info

Publication number
GB8709629D0
GB8709629D0 GB878709629A GB8709629A GB8709629D0 GB 8709629 D0 GB8709629 D0 GB 8709629D0 GB 878709629 A GB878709629 A GB 878709629A GB 8709629 A GB8709629 A GB 8709629A GB 8709629 D0 GB8709629 D0 GB 8709629D0
Authority
GB
United Kingdom
Prior art keywords
deposition
thin films
films
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB878709629A
Other versions
GB2194966A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Publication of GB8709629D0 publication Critical patent/GB8709629D0/en
Publication of GB2194966A publication Critical patent/GB2194966A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
GB08709629A 1986-08-20 1987-04-23 Deposition of films Withdrawn GB2194966A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868620273A GB8620273D0 (en) 1986-08-20 1986-08-20 Deposition of thin films

Publications (2)

Publication Number Publication Date
GB8709629D0 true GB8709629D0 (en) 1987-05-28
GB2194966A GB2194966A (en) 1988-03-23

Family

ID=10602984

Family Applications (2)

Application Number Title Priority Date Filing Date
GB868620273A Pending GB8620273D0 (en) 1986-08-20 1986-08-20 Deposition of thin films
GB08709629A Withdrawn GB2194966A (en) 1986-08-20 1987-04-23 Deposition of films

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB868620273A Pending GB8620273D0 (en) 1986-08-20 1986-08-20 Deposition of thin films

Country Status (3)

Country Link
DE (1) DE3726775A1 (en)
FR (1) FR2603049A1 (en)
GB (2) GB8620273D0 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774416A (en) * 1986-09-24 1988-09-27 Plaser Corporation Large cross-sectional area molecular beam source for semiconductor processing
JPH0225577A (en) * 1988-07-15 1990-01-29 Mitsubishi Electric Corp Thin film forming device
DE3830249A1 (en) * 1988-09-06 1990-03-15 Schott Glaswerke PLASMA PROCESS FOR COATING LEVEL SUBSTRATES
DE3926023A1 (en) * 1988-09-06 1990-03-15 Schott Glaswerke CVD COATING METHOD FOR PRODUCING LAYERS AND DEVICE FOR CARRYING OUT THE METHOD
GB2241250A (en) * 1990-01-26 1991-08-28 Fuji Electric Co Ltd RF plasma CVD employing an electrode with a shower supply surface
GB9206463D0 (en) * 1992-03-25 1992-07-22 Marconi Gec Ltd Head-up display system
US5468955A (en) * 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB768733A (en) * 1954-10-19 1957-02-20 Ohio Commw Eng Co Improvements in and relating to plating by the decomposition of gaseous metal-bearing compounds
US3519479A (en) * 1965-12-16 1970-07-07 Matsushita Electronics Corp Method of manufacturing semiconductor device
DE1900119B2 (en) * 1969-01-02 1977-06-30 Siemens AG, 1000 Berlin und 8000 München PROCESS FOR DEPOSITING HIGH-MELTING CONTACT METAL LAYERS AT LOW TEMPERATURES
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
US4066037A (en) * 1975-12-17 1978-01-03 Lfe Corportion Apparatus for depositing dielectric films using a glow discharge
JPS5930130B2 (en) * 1979-09-20 1984-07-25 富士通株式会社 Vapor phase growth method
US4438154A (en) * 1982-04-28 1984-03-20 Stanley Electric Co., Ltd. Method of fabricating an amorphous silicon film
FR2538987A1 (en) * 1983-01-05 1984-07-06 Commissariat Energie Atomique ENCLOSURE FOR THE TREATMENT AND PARTICULARLY THE ETCHING OF SUBSTRATES BY THE REACTIVE PLASMA METHOD
JPS59207631A (en) * 1983-05-11 1984-11-24 Semiconductor Res Found Dry process employing photochemistry
GB8414878D0 (en) * 1984-06-11 1984-07-18 Gen Electric Co Plc Integrated optical waveguides
GB2169003B (en) * 1984-11-16 1987-12-31 Sony Corp Chemical vapour deposition
NL8602356A (en) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership APPARATUS AND METHOD FOR AN AXIAL SYMMETRICAL REACTOR FOR THE CHEMICAL VAPORIZATION.
NL8602357A (en) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership APPARATUS AND METHOD FOR THE CHEMICAL VAPOR DISPOSAL USING AN AXIAL SYMMETRICAL GAS FLOW.

Also Published As

Publication number Publication date
DE3726775A1 (en) 1988-03-03
GB2194966A (en) 1988-03-23
FR2603049A1 (en) 1988-02-26
GB8620273D0 (en) 1986-10-01

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)