GB8414923D0 - Mosfet fabrication method - Google Patents

Mosfet fabrication method

Info

Publication number
GB8414923D0
GB8414923D0 GB848414923A GB8414923A GB8414923D0 GB 8414923 D0 GB8414923 D0 GB 8414923D0 GB 848414923 A GB848414923 A GB 848414923A GB 8414923 A GB8414923 A GB 8414923A GB 8414923 D0 GB8414923 D0 GB 8414923D0
Authority
GB
United Kingdom
Prior art keywords
fabrication method
mosfet fabrication
mosfet
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB848414923A
Other versions
GB2142185A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8414923D0 publication Critical patent/GB8414923D0/en
Publication of GB2142185A publication Critical patent/GB2142185A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB08414923A 1983-06-22 1984-06-12 Mosfet fabrication method Withdrawn GB2142185A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50680483A 1983-06-22 1983-06-22

Publications (2)

Publication Number Publication Date
GB8414923D0 true GB8414923D0 (en) 1984-07-18
GB2142185A GB2142185A (en) 1985-01-09

Family

ID=24016078

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08414923A Withdrawn GB2142185A (en) 1983-06-22 1984-06-12 Mosfet fabrication method

Country Status (5)

Country Link
DE (1) DE3422495A1 (en)
FR (1) FR2549294A1 (en)
GB (1) GB2142185A (en)
IT (1) IT1174192B (en)
SE (1) SE8403302L (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942449A (en) * 1988-03-28 1990-07-17 General Electric Company Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips
KR890017771A (en) * 1988-05-20 1989-12-18 강진구 Semiconductor device manufacturing method
US5158907A (en) * 1990-08-02 1992-10-27 At&T Bell Laboratories Method for making semiconductor devices with low dislocation defects

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2059116C3 (en) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for manufacturing a semiconductor component
US3861968A (en) * 1972-06-19 1975-01-21 Ibm Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition
US4536842A (en) * 1982-03-31 1985-08-20 Tokyo Shibaura Denki Kabushiki Kaisha System for measuring interfloor traffic for group control of elevator cars

Also Published As

Publication number Publication date
IT8421384A1 (en) 1985-12-13
DE3422495A1 (en) 1985-01-10
FR2549294A1 (en) 1985-01-18
IT1174192B (en) 1987-07-01
GB2142185A (en) 1985-01-09
SE8403302D0 (en) 1984-06-20
SE8403302L (en) 1984-12-23
IT8421384A0 (en) 1984-06-13

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)