GB800296A - Manufacture of junction-containing silicon crystals - Google Patents

Manufacture of junction-containing silicon crystals

Info

Publication number
GB800296A
GB800296A GB3531656A GB3531656A GB800296A GB 800296 A GB800296 A GB 800296A GB 3531656 A GB3531656 A GB 3531656A GB 3531656 A GB3531656 A GB 3531656A GB 800296 A GB800296 A GB 800296A
Authority
GB
United Kingdom
Prior art keywords
silicon crystals
junction
manufacture
region
containing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3531656A
Inventor
Willis Alfred Adcock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to GB3531656A priority Critical patent/GB800296A/en
Publication of GB800296A publication Critical patent/GB800296A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Abstract

800,296. Junction silicon crystals. TEXAS INSTRUMENTS, Inc. Nov. 19, 1956, No. 35316/56. Class 37. Silicon crystals are formed of the type n-p-p<SP>+</SP> or n-p-p<SP>+</SP>-n, in which the first p-region has a resistivity of at least 1.5 ohm-cm., and then heated to 300-450‹ C. to convert this region to i-type, so that the final result is n-i-p or n-i-p-n respectively. The crystals are formed by pulling from the melt of n-type material, with addition thereto first of a small quantiy of aluminium and then a larger quantity of aluminium. A final addition of arsenic to the melt will give the end n-region if desired.
GB3531656A 1956-11-19 1956-11-19 Manufacture of junction-containing silicon crystals Expired GB800296A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3531656A GB800296A (en) 1956-11-19 1956-11-19 Manufacture of junction-containing silicon crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3531656A GB800296A (en) 1956-11-19 1956-11-19 Manufacture of junction-containing silicon crystals

Publications (1)

Publication Number Publication Date
GB800296A true GB800296A (en) 1958-08-20

Family

ID=10376328

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3531656A Expired GB800296A (en) 1956-11-19 1956-11-19 Manufacture of junction-containing silicon crystals

Country Status (1)

Country Link
GB (1) GB800296A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1158179B (en) * 1956-09-05 1963-11-28 Int Standard Electric Corp Drift transistor and method for making it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1158179B (en) * 1956-09-05 1963-11-28 Int Standard Electric Corp Drift transistor and method for making it

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