GB736512A - Improvements in or relating to cathode sputtering apparatus - Google Patents

Improvements in or relating to cathode sputtering apparatus

Info

Publication number
GB736512A
GB736512A GB2134052A GB2134052A GB736512A GB 736512 A GB736512 A GB 736512A GB 2134052 A GB2134052 A GB 2134052A GB 2134052 A GB2134052 A GB 2134052A GB 736512 A GB736512 A GB 736512A
Authority
GB
United Kingdom
Prior art keywords
cathode
plate
cylinder
annulus
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2134052A
Inventor
Leslie Arthur Holland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Edwards High Vacuum Ltd
Original Assignee
W Edwards and Company London Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by W Edwards and Company London Ltd filed Critical W Edwards and Company London Ltd
Priority to GB2134052A priority Critical patent/GB736512A/en
Publication of GB736512A publication Critical patent/GB736512A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

736,512. Coating by sputtering. EDWARDS & CO. (LONDON), Ltd., W. Jan. 15, 1954 [Aug. 25, 1952], No. 21340/52. Class 82 (2). A cathode sputtering apparatus comprises a vacuum chamber, which may be cylindrical, a support for the work, an anode, which may be the housing, a first cathode comprising the material to be applied as a coating, a second cathode in the same general plane as the work support and shaped to surround, partially or wholly, the periphery thereof, and means providing a magnetic field the lines of force of which extend between the cathodes. As shown, a hollow cylinder 1 of copper has its lower end resting on a vacuum seal ring gasket 2 in a mild steel base-plate 4, said base-plate forming one polepiece of an electromagnet 5, the opposite polepiece comprising a mild steel annulus 6 placed on the upper end of said cylinder 1 with similar vacuum sealing. A mild steel plate 8 spans the annulus 6 and rests upon a further vacuum seal ring 9 in the upper face of the annulus, the plate 8 thus completing the second polepiece and forming a door providing access to the chamber formed by the cylinder 1, the base 4 and the annulus 6. A disc cathode 11, composed of the material to be sputtered, is secured to the door 8 by means of insulators 1 and engages, by means of a spring-metal strip 12, the upper end of a terminal rod 13, which is shielded for the greater part of its length, by a tube 15, from the anode formed by the cylinder 1. An annular cathode 16, which may be made from the same material as the disc cathode if uniformity of the deposit is not important, or from a metal which has a low intrinsic sputtering rate, e.g. aluminium, if uniformity is desired, is supported upon insulators 17 and a circular glass plate 18, forming a work-table, is supported within the annular cathode on insulators 19 carried by a stand 20 which rests on the baseplate 4. A terminal post 21 connected to the cathode 16 is supported by an insulating bushing 22 in the base-plate 4, the latter being apertured to receive an exhaust pipe 24 for connection to a vacuum pump. In operation of the apparatus, a field of 200 gauss is supplied by the magnet, the cylinder 1 is connected to the positive terminal of a D.C. source providing 1500 volts and the cathodes 11 and 16 are connected to the negative terminal, the total current being about 150 mA. and the current density 0.25 mA. per square cm. The pressure within the chamber is reduced to 0.08 mm. Hg by pumping, it being further reduced to 3.5 X 10<SP>-3</SP> mm. Hg. when the magnetic field is applied.
GB2134052A 1952-08-25 1952-08-25 Improvements in or relating to cathode sputtering apparatus Expired GB736512A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2134052A GB736512A (en) 1952-08-25 1952-08-25 Improvements in or relating to cathode sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2134052A GB736512A (en) 1952-08-25 1952-08-25 Improvements in or relating to cathode sputtering apparatus

Publications (1)

Publication Number Publication Date
GB736512A true GB736512A (en) 1955-09-07

Family

ID=10161227

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2134052A Expired GB736512A (en) 1952-08-25 1952-08-25 Improvements in or relating to cathode sputtering apparatus

Country Status (1)

Country Link
GB (1) GB736512A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2352393A1 (en) * 1976-05-19 1977-12-16 Battelle Memorial Institute PROCESS FOR CARRYING OUT A DEPOSIT IN A LUMINESCENT DISCHARGE ON AT LEAST ONE SUBSTRATE, AND IONIC PICKLING OF THIS SUBSTRATE AND DEVICE FOR IMPLEMENTING THIS PROCESS
US4354910A (en) * 1980-01-22 1982-10-19 Berna Ag Olten Method and apparatus for the partial coating of a substrate by cathode sputtering
FR2516308A1 (en) * 1981-11-12 1983-05-13 Varian Associates RADIO FREQUENCY ATTACK PLATE, IN PARTICULAR FOR CATHODIC SPUTTER ATTACK OF SEMICONDUCTOR WAFERS

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2352393A1 (en) * 1976-05-19 1977-12-16 Battelle Memorial Institute PROCESS FOR CARRYING OUT A DEPOSIT IN A LUMINESCENT DISCHARGE ON AT LEAST ONE SUBSTRATE, AND IONIC PICKLING OF THIS SUBSTRATE AND DEVICE FOR IMPLEMENTING THIS PROCESS
US4354910A (en) * 1980-01-22 1982-10-19 Berna Ag Olten Method and apparatus for the partial coating of a substrate by cathode sputtering
FR2516308A1 (en) * 1981-11-12 1983-05-13 Varian Associates RADIO FREQUENCY ATTACK PLATE, IN PARTICULAR FOR CATHODIC SPUTTER ATTACK OF SEMICONDUCTOR WAFERS

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