GB406665A - Improvements relating to the manufacture of photo-electric cells - Google Patents
Improvements relating to the manufacture of photo-electric cellsInfo
- Publication number
- GB406665A GB406665A GB2422232A GB2422232A GB406665A GB 406665 A GB406665 A GB 406665A GB 2422232 A GB2422232 A GB 2422232A GB 2422232 A GB2422232 A GB 2422232A GB 406665 A GB406665 A GB 406665A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plate
- finally
- layer
- photo
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 abstract 3
- 229960004643 cupric oxide Drugs 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229920002160 Celluloid Polymers 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000005751 Copper oxide Substances 0.000 abstract 1
- 229920001800 Shellac Polymers 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910000431 copper oxide Inorganic materials 0.000 abstract 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 1
- 229940112669 cuprous oxide Drugs 0.000 abstract 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000009499 grossing Methods 0.000 abstract 1
- 230000003472 neutralizing effect Effects 0.000 abstract 1
- 239000012047 saturated solution Substances 0.000 abstract 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 abstract 1
- 229940113147 shellac Drugs 0.000 abstract 1
- 235000013874 shellac Nutrition 0.000 abstract 1
- 239000004208 shellac Substances 0.000 abstract 1
- 229940098221 silver cyanide Drugs 0.000 abstract 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Abstract
406,665. Light-sensitive cells. CUBITT, R. H., WILLIAMS, A. L., and WESTINGHOUSE BRAKE & SAXBY SIGNAL CO., Ltd., 82, York Road, King's Cross, London. Aug. 30, 1932, No. 24222. [Class 40 (iii).] Copper-oxide cells are made from easily separable portions 2 of a plate 1 which is slotted as shown at 3 and hung by a hole 5 in an electric furnace at 1000‹ C. for 24 hours and then at 520‹ C. for 2 hours and finally cooled in still air. The discs 2 having been completely oxidized, boiling citric acid is applied to them for the purpose of removing the cupric oxide and deoxidizing the outer surface of the layer of cuprous oxide. The layer of reduced copper so formed is then washed off and the plate is immersed in a saturated solution of silver cyanide for smoothing the surface and neutralizing residual acid. Graphite and a thick coating of gold are next applied, and finally a photo-electric contact layer of gold is sputtered on to the surface. Suitable dimensions and conditions are detailed in the Specification. The element is finally coated with shellac or celluloid. Fig. 2 (not shown) shows how to cut the plate 1 when rectangular portions 2 are required.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2422232A GB406665A (en) | 1932-08-30 | 1932-08-30 | Improvements relating to the manufacture of photo-electric cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2422232A GB406665A (en) | 1932-08-30 | 1932-08-30 | Improvements relating to the manufacture of photo-electric cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB406665A true GB406665A (en) | 1934-02-28 |
Family
ID=10208302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2422232A Expired GB406665A (en) | 1932-08-30 | 1932-08-30 | Improvements relating to the manufacture of photo-electric cells |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB406665A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004059751A2 (en) * | 2002-12-20 | 2004-07-15 | Cree, Inc. | Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices |
-
1932
- 1932-08-30 GB GB2422232A patent/GB406665A/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004059751A2 (en) * | 2002-12-20 | 2004-07-15 | Cree, Inc. | Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices |
| WO2004059751A3 (en) * | 2002-12-20 | 2004-09-30 | Cree Inc | Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices |
| US7160747B2 (en) | 2002-12-20 | 2007-01-09 | Cree, Inc. | Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers |
| US7329569B2 (en) | 2002-12-20 | 2008-02-12 | Cree, Inc. | Methods of forming semiconductor devices including mesa structures and multiple passivation layers |
| US7613219B2 (en) | 2002-12-20 | 2009-11-03 | Cree, Inc. | Semiconductor devices having self aligned semiconductor mesas and contact layers |
| US7642626B2 (en) | 2002-12-20 | 2010-01-05 | Cree, Inc. | Semiconductor devices including mesa structures and multiple passivation layers |
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