GB2572702A - Lateral power transistor comprising filled vertical nano- or micro-holes and manufacture thereof - Google Patents

Lateral power transistor comprising filled vertical nano- or micro-holes and manufacture thereof Download PDF

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Publication number
GB2572702A
GB2572702A GB1907668.6A GB201907668A GB2572702A GB 2572702 A GB2572702 A GB 2572702A GB 201907668 A GB201907668 A GB 201907668A GB 2572702 A GB2572702 A GB 2572702A
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holes
power transistor
micro
lateral
manufacture
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GB1907668.6A
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GB201907668D0 (en
GB2572702B (en
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Wood John
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H01L29/1008—Base region of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Rectifiers (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

A lateral power transistor formed in a portion of a semiconductor wafer, wherein through-holes of micro- or nanoscale size extend through the wafer, to provide the location of doped regions that extend from and around the through-holes throughout the thickness of the wafer and form terminal regions (12, 14) of the transistor, and lateral conduction paths (16) between said regions. Devices according to the invention are not restricted in volume by the usual depth limitation of conventional lateral and vertical power devices related to diffusion depth and breakdown voltage respectively. The invention is useful for BJT or JFET constructions and for one or more power transistor on a single monolithic construction.
GB1907668.6A 2016-12-12 2017-12-12 Adiabatic gate/base driver circuit Active GB2572702B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1621043.7A GB201621043D0 (en) 2016-12-12 2016-12-12 Ultra-lateral power transistor and driver structures
PCT/GB2017/053713 WO2018109452A1 (en) 2016-12-12 2017-12-12 Lateral power transistor comprising filled vertical nano- or micro-holes and manufacture thereof

Publications (3)

Publication Number Publication Date
GB201907668D0 GB201907668D0 (en) 2019-07-17
GB2572702A true GB2572702A (en) 2019-10-09
GB2572702B GB2572702B (en) 2022-06-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1621043.7A Ceased GB201621043D0 (en) 2013-02-07 2016-12-12 Ultra-lateral power transistor and driver structures
GB1907668.6A Active GB2572702B (en) 2016-12-12 2017-12-12 Adiabatic gate/base driver circuit

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB1621043.7A Ceased GB201621043D0 (en) 2013-02-07 2016-12-12 Ultra-lateral power transistor and driver structures

Country Status (4)

Country Link
AU (1) AU2017374758B2 (en)
GB (2) GB201621043D0 (en)
TW (1) TWI745411B (en)
WO (1) WO2018109452A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11411557B2 (en) 2020-05-18 2022-08-09 Ideal Power Inc. Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
US11496129B2 (en) 2020-06-08 2022-11-08 Ideal Power Inc. Method and system of current sharing among bidirectional double-base bipolar junction transistors
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11777018B2 (en) 2020-11-19 2023-10-03 Ideal Power Inc. Layout to reduce current crowding at endpoints

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018214628B4 (en) * 2018-08-29 2020-09-03 Robert Bosch Gmbh Power field effect transistor
TWI703806B (en) * 2019-10-14 2020-09-01 台達電子工業股份有限公司 Active bridge rectifier circuit
TWI831083B (en) * 2021-11-17 2024-02-01 瑞昱半導體股份有限公司 Inductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039548A2 (en) * 1996-02-05 2000-09-27 Siemens Aktiengesellschaft Field effect controlled semiconductor component
US20020063259A1 (en) * 2000-11-27 2002-05-30 Yasunori Usui A power mosfet having laterally three-layered structure formed among element isolation regions
US20050093097A1 (en) * 2003-10-30 2005-05-05 Baiocchi Frank A. Enhanced substrate contact for a semiconductor device
US20130075741A1 (en) * 2011-09-23 2013-03-28 Alpha and Omega Semiconductor Inc. Lateral PNP Bipolar Transistor Formed with Multiple Epitaxial Layers
EP3029735A1 (en) * 2014-12-04 2016-06-08 Nxp B.V. Semiconductor device
GB2546475A (en) * 2015-12-16 2017-07-26 Wood John Ultra lateral extra 3

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US3044909A (en) 1958-10-23 1962-07-17 Shockley William Semiconductive wafer and method of making the same
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
JP2006191746A (en) * 2005-01-06 2006-07-20 Sony Corp Switching power circuit
US7269038B2 (en) * 2005-09-12 2007-09-11 Fairchild Semiconductor Corporation Vrms and rectified current sense full-bridge synchronous-rectification integrated with PFC
TWI365592B (en) * 2007-12-31 2012-06-01 Chimei Innolux Corp Power supply circuit
JP4506891B2 (en) * 2008-12-23 2010-07-21 ダイキン工業株式会社 Current source power conversion circuit
CN102723883A (en) * 2012-07-02 2012-10-10 沈阳师范大学 Capacitor energy-storage type silicon-controlled switch power supply
US10049884B2 (en) 2013-02-07 2018-08-14 John Wood Anodic etching of substrates
WO2014122472A1 (en) 2013-02-07 2014-08-14 John Wood A bipolar junction transistor structure
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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039548A2 (en) * 1996-02-05 2000-09-27 Siemens Aktiengesellschaft Field effect controlled semiconductor component
US20020063259A1 (en) * 2000-11-27 2002-05-30 Yasunori Usui A power mosfet having laterally three-layered structure formed among element isolation regions
US20050093097A1 (en) * 2003-10-30 2005-05-05 Baiocchi Frank A. Enhanced substrate contact for a semiconductor device
US20130075741A1 (en) * 2011-09-23 2013-03-28 Alpha and Omega Semiconductor Inc. Lateral PNP Bipolar Transistor Formed with Multiple Epitaxial Layers
EP3029735A1 (en) * 2014-12-04 2016-06-08 Nxp B.V. Semiconductor device
GB2546475A (en) * 2015-12-16 2017-07-26 Wood John Ultra lateral extra 3

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11411557B2 (en) 2020-05-18 2022-08-09 Ideal Power Inc. Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
US11804835B2 (en) 2020-05-18 2023-10-31 Ideal Power Inc. Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
US11496129B2 (en) 2020-06-08 2022-11-08 Ideal Power Inc. Method and system of current sharing among bidirectional double-base bipolar junction transistors
US11777018B2 (en) 2020-11-19 2023-10-03 Ideal Power Inc. Layout to reduce current crowding at endpoints

Also Published As

Publication number Publication date
AU2017374758B2 (en) 2022-08-11
AU2017374758A1 (en) 2019-06-20
TW201834373A (en) 2018-09-16
WO2018109452A1 (en) 2018-06-21
GB201907668D0 (en) 2019-07-17
TWI745411B (en) 2021-11-11
GB201621043D0 (en) 2017-01-25
GB2572702B (en) 2022-06-01

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