GB201621043D0 - Ultra-lateral power transistor and driver structures - Google Patents

Ultra-lateral power transistor and driver structures

Info

Publication number
GB201621043D0
GB201621043D0 GBGB1621043.7A GB201621043A GB201621043D0 GB 201621043 D0 GB201621043 D0 GB 201621043D0 GB 201621043 A GB201621043 A GB 201621043A GB 201621043 D0 GB201621043 D0 GB 201621043D0
Authority
GB
United Kingdom
Prior art keywords
ultra
power transistor
lateral power
driver structures
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1621043.7A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GBGB1621043.7A priority Critical patent/GB201621043D0/en
Publication of GB201621043D0 publication Critical patent/GB201621043D0/en
Priority to US15/595,361 priority patent/US10049884B2/en
Priority to TW106125178A priority patent/TWI745411B/en
Priority to PCT/GB2017/053713 priority patent/WO2018109452A1/en
Priority to AU2017374758A priority patent/AU2017374758B2/en
Priority to GB1907668.6A priority patent/GB2572702B/en
Priority to US16/031,752 priority patent/US10374070B2/en
Priority to US16/444,828 priority patent/US10700216B2/en
Priority to US16/872,534 priority patent/US11101372B2/en
Priority to US17/379,189 priority patent/US20210351178A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H01L29/1008—Base region of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Rectifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
GBGB1621043.7A 2013-02-07 2016-12-12 Ultra-lateral power transistor and driver structures Ceased GB201621043D0 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GBGB1621043.7A GB201621043D0 (en) 2016-12-12 2016-12-12 Ultra-lateral power transistor and driver structures
US15/595,361 US10049884B2 (en) 2013-02-07 2017-05-15 Anodic etching of substrates
TW106125178A TWI745411B (en) 2016-12-12 2017-07-26 Active full bridge rectifier with interrupter switch
GB1907668.6A GB2572702B (en) 2016-12-12 2017-12-12 Adiabatic gate/base driver circuit
AU2017374758A AU2017374758B2 (en) 2016-12-12 2017-12-12 Lateral power transistor comprising filled vertical nano- or micro-holes and manufacture thereof
PCT/GB2017/053713 WO2018109452A1 (en) 2016-12-12 2017-12-12 Lateral power transistor comprising filled vertical nano- or micro-holes and manufacture thereof
US16/031,752 US10374070B2 (en) 2013-02-07 2018-07-10 Bidirectional bipolar-mode JFET driver circuitry
US16/444,828 US10700216B2 (en) 2013-02-07 2019-06-18 Bidirectional bipolar-mode JFET driver circuitry
US16/872,534 US11101372B2 (en) 2013-02-07 2020-05-12 Double-sided vertical power transistor structure
US17/379,189 US20210351178A1 (en) 2013-02-07 2021-07-19 Double-sided vertical power transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1621043.7A GB201621043D0 (en) 2016-12-12 2016-12-12 Ultra-lateral power transistor and driver structures

Publications (1)

Publication Number Publication Date
GB201621043D0 true GB201621043D0 (en) 2017-01-25

Family

ID=58222070

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1621043.7A Ceased GB201621043D0 (en) 2013-02-07 2016-12-12 Ultra-lateral power transistor and driver structures
GB1907668.6A Active GB2572702B (en) 2016-12-12 2017-12-12 Adiabatic gate/base driver circuit

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1907668.6A Active GB2572702B (en) 2016-12-12 2017-12-12 Adiabatic gate/base driver circuit

Country Status (4)

Country Link
AU (1) AU2017374758B2 (en)
GB (2) GB201621043D0 (en)
TW (1) TWI745411B (en)
WO (1) WO2018109452A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
DE102018214628B4 (en) * 2018-08-29 2020-09-03 Robert Bosch Gmbh Power field effect transistor
TWI703806B (en) * 2019-10-14 2020-09-01 台達電子工業股份有限公司 Active bridge rectifier circuit
US11411557B2 (en) 2020-05-18 2022-08-09 Ideal Power Inc. Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
US11496129B2 (en) 2020-06-08 2022-11-08 Ideal Power Inc. Method and system of current sharing among bidirectional double-base bipolar junction transistors
US11777018B2 (en) 2020-11-19 2023-10-03 Ideal Power Inc. Layout to reduce current crowding at endpoints
TWI831083B (en) * 2021-11-17 2024-02-01 瑞昱半導體股份有限公司 Inductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3044909A (en) 1958-10-23 1962-07-17 Shockley William Semiconductive wafer and method of making the same
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US6184555B1 (en) * 1996-02-05 2001-02-06 Siemens Aktiengesellschaft Field effect-controlled semiconductor component
JP4088033B2 (en) * 2000-11-27 2008-05-21 株式会社東芝 Semiconductor device
US6987052B2 (en) * 2003-10-30 2006-01-17 Agere Systems Inc. Method for making enhanced substrate contact for a semiconductor device
JP2006191746A (en) * 2005-01-06 2006-07-20 Sony Corp Switching power circuit
US7269038B2 (en) * 2005-09-12 2007-09-11 Fairchild Semiconductor Corporation Vrms and rectified current sense full-bridge synchronous-rectification integrated with PFC
TWI365592B (en) * 2007-12-31 2012-06-01 Chimei Innolux Corp Power supply circuit
JP4506891B2 (en) * 2008-12-23 2010-07-21 ダイキン工業株式会社 Current source power conversion circuit
US8916951B2 (en) * 2011-09-23 2014-12-23 Alpha And Omega Semiconductor Incorporated Lateral PNP bipolar transistor formed with multiple epitaxial layers
CN102723883A (en) * 2012-07-02 2012-10-10 沈阳师范大学 Capacitor energy-storage type silicon-controlled switch power supply
CN105308750B (en) * 2013-02-07 2019-04-26 约翰·伍德 Bipolar junction transistor structure
US10049884B2 (en) 2013-02-07 2018-08-14 John Wood Anodic etching of substrates
EP3029735A1 (en) * 2014-12-04 2016-06-08 Nxp B.V. Semiconductor device
GB2546475B (en) * 2015-12-16 2020-12-02 Wood John Ultra-Lateral Power Transistor amd Driver structures
CN205490211U (en) * 2016-04-01 2016-08-17 河海大学 Miniwatt switching power supply circuit of multiplexed output

Also Published As

Publication number Publication date
GB2572702A (en) 2019-10-09
TWI745411B (en) 2021-11-11
AU2017374758B2 (en) 2022-08-11
GB201907668D0 (en) 2019-07-17
TW201834373A (en) 2018-09-16
AU2017374758A1 (en) 2019-06-20
GB2572702B (en) 2022-06-01
WO2018109452A1 (en) 2018-06-21

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Legal Events

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AT Applications terminated before publication under section 16(1)