GB2569497B - A power MOSFET with an integrated Schottky diode - Google Patents
A power MOSFET with an integrated Schottky diode Download PDFInfo
- Publication number
- GB2569497B GB2569497B GB1905012.9A GB201905012A GB2569497B GB 2569497 B GB2569497 B GB 2569497B GB 201905012 A GB201905012 A GB 201905012A GB 2569497 B GB2569497 B GB 2569497B
- Authority
- GB
- United Kingdom
- Prior art keywords
- schottky diode
- power mosfet
- integrated schottky
- integrated
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/GB2016/052966 WO2018055318A1 (en) | 2016-09-23 | 2016-09-23 | A Power MOSFET with an Integrated Schottky Diode |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201905012D0 GB201905012D0 (en) | 2019-05-22 |
GB2569497A GB2569497A (en) | 2019-06-19 |
GB2569497B true GB2569497B (en) | 2021-09-29 |
Family
ID=57068150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1905012.9A Active GB2569497B (en) | 2016-09-23 | 2016-09-23 | A power MOSFET with an integrated Schottky diode |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2569497B (en) |
WO (1) | WO2018055318A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10679984B2 (en) * | 2018-07-10 | 2020-06-09 | Sanken Electric Co., Ltd. | Semiconductor device and method for forming the semiconductor device |
CN111933711B (en) * | 2020-08-18 | 2022-08-23 | 电子科技大学 | SBD integrated super-junction MOSFET |
CN113035955B (en) * | 2021-02-25 | 2023-03-28 | 湖南三安半导体有限责任公司 | Silicon carbide MOSFET device integrated with Schottky diode and preparation method thereof |
CN113745316A (en) * | 2021-08-31 | 2021-12-03 | 深圳市威兆半导体有限公司 | Shielding gate MOSFET device, chip and terminal equipment |
CN117059672B (en) * | 2023-10-11 | 2024-01-23 | 通威微电子有限公司 | Semiconductor device integrated with SBD and manufacturing method thereof |
CN117253923A (en) * | 2023-11-20 | 2023-12-19 | 深圳平创半导体有限公司 | Boss split gate silicon carbide MOSFET integrated with JBS and preparation process |
CN118136672A (en) * | 2024-04-30 | 2024-06-04 | 河北博威集成电路有限公司 | Silicon carbide MOSFET device integrated with SBD and preparation method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907169A (en) * | 1997-04-18 | 1999-05-25 | Megamos Corporation | Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance |
JP2000323488A (en) * | 1999-05-10 | 2000-11-24 | Fuji Electric Co Ltd | Diode and manufacture thereof |
US20070045727A1 (en) * | 2005-08-25 | 2007-03-01 | Masaki Shiraishi | DMOSFET and planar type MOSFET |
US20110227154A1 (en) * | 2010-03-19 | 2011-09-22 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
EP1204145B1 (en) * | 2000-10-23 | 2011-12-28 | Panasonic Corporation | Semiconductor element |
US20120112266A1 (en) * | 2010-11-10 | 2012-05-10 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
JP2015090883A (en) * | 2013-11-05 | 2015-05-11 | 住友電気工業株式会社 | Silicon carbide semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621107B2 (en) | 2001-08-23 | 2003-09-16 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
-
2016
- 2016-09-23 WO PCT/GB2016/052966 patent/WO2018055318A1/en active Application Filing
- 2016-09-23 GB GB1905012.9A patent/GB2569497B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907169A (en) * | 1997-04-18 | 1999-05-25 | Megamos Corporation | Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance |
JP2000323488A (en) * | 1999-05-10 | 2000-11-24 | Fuji Electric Co Ltd | Diode and manufacture thereof |
EP1204145B1 (en) * | 2000-10-23 | 2011-12-28 | Panasonic Corporation | Semiconductor element |
US20070045727A1 (en) * | 2005-08-25 | 2007-03-01 | Masaki Shiraishi | DMOSFET and planar type MOSFET |
US20110227154A1 (en) * | 2010-03-19 | 2011-09-22 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20120112266A1 (en) * | 2010-11-10 | 2012-05-10 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
JP2015090883A (en) * | 2013-11-05 | 2015-05-11 | 住友電気工業株式会社 | Silicon carbide semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
GB201905012D0 (en) | 2019-05-22 |
GB2569497A (en) | 2019-06-19 |
WO2018055318A1 (en) | 2018-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2569497B (en) | A power MOSFET with an integrated Schottky diode | |
GB2570569B (en) | Schottky diode | |
GB2559038B (en) | A harness with an energy dissipation region | |
EP3591711A4 (en) | Schottky barrier diode | |
EP3540784A4 (en) | Schottky barrier diode and electronic circuit provided with same | |
EP3703137A4 (en) | Schottky barrier diode | |
DE102015117994B8 (en) | Power semiconductor transistor with a fully depleted channel region | |
DE102014116082A8 (en) | Semiconductor device with a voltage-compensated chip electrode | |
PL3109966T3 (en) | Wind farm connection with diode rectifier | |
EP3238335A4 (en) | A low power ideal diode control circuit | |
HK1214891A1 (en) | Converter station with diode rectifier | |
IL276793A (en) | Power semiconductor device with optimized field-plate design | |
EP3651210A4 (en) | Schottky barrier diode | |
EP3273487A4 (en) | High withstand voltage schottky barrier diode | |
FR3016266B1 (en) | ELECTRONIC POWER DEVICE WITH IMPROVED COOLING | |
FR3009474B1 (en) | ELECTROLUMINESCENT DIODE DEVICE | |
EP3683847A4 (en) | Schottky barrier diode | |
GB201607570D0 (en) | Device power management | |
FR3043839B1 (en) | HETEROJUNCTION DIODE HAVING AN INCREASED TRANSIENT OVERLOAD CURRENT | |
PL2940782T3 (en) | Semiconductor diode switch | |
EP3202058A4 (en) | Semiconductor laser diode with integrated heating region | |
EP2969341A4 (en) | Reciprocating tool with biasing snubber | |
GB201613025D0 (en) | Biometric device with low power usage | |
GB2601276B (en) | Schottky diode | |
FR3031273B1 (en) | OPTOELECTRONIC CIRCUIT WITH ELECTROLUMINESCENT DIODES |