GB2484332A - LED encapsulation process and shield structure made thereby - Google Patents
LED encapsulation process and shield structure made thereby Download PDFInfo
- Publication number
- GB2484332A GB2484332A GB1016914.2A GB201016914A GB2484332A GB 2484332 A GB2484332 A GB 2484332A GB 201016914 A GB201016914 A GB 201016914A GB 2484332 A GB2484332 A GB 2484332A
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- United Kingdom
- Prior art keywords
- encapsulation layer
- phosphor powder
- encapsulation
- led
- shield
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01L51/5237—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Abstract
A Light Emitting Diode (LED) encapsulation process (fig. 3) and a shield structure 20 made thereby comprising first encapsulation layer 30, phosphor powder 40 uniformly disposed on a surface of first encapsulation layer 30 and second encapsulation layer 31 disposed on phosphor powder 40 and covering first encapsulation layer 30 so that phosphor powder 40 is sandwiched between the two encapsulation layers 30, 31 wherein heating and stamping is then performed using moulds (50, 51, fig. 4e) to form one piece which is cut to form LED shield 20. LED shield 20 may form a lens of different shapes e.g. circular arc-shaped shield 20. First and second encapsulation layers 30, 31 may be formed by coating liquid silicone on a model and curing to form thin film-type layers. Second encapsulation layer 31 may be formed by coating liquid silicone on the surface of first encapsulation layer 30 with phosphor powder 40. An outer side surface of shield 20 can be pressed annularly using an embossed mould (50, fig. 5d) to form a reflecting structure (21, fig. 5e) for guiding a direction and angle of light projection. First and second encapsulation layers 30, 31 may also be thermally compressed together.
Description
LED ENCAPSULATION PROCESS AND SHIELD
STRUCTURE MADE THEREBY
1. Field of the Invention
The present invention relates to the field of manufacture technology of light-emitting diodes, and more particularly to a process in which two-stage encapsulation is utilized to ensure the arrangement position of phosphor powder and then molding is used to form a shield and its structure made thereby.
2. Description of the Related Art
A conventional LED structure, as shown in FIG. 1, mainly comprises a base 60, wherein the base 60 comprises a leadframe, positive and negative electrodes that are relatively spaced apart at a certain distance, and legs at the lower portion. A chip is mounted on the positive or negative electrode, gold wires are bonded from the chip to the opposite electrode, and then they are covered by epoxy resin encapsulation 70.
Phosphor powder 80 is doped within the encapsulation 70. When the light emitted by the chip hits the phosphor powder 80 in the encapsulation 70, different colors are generated due to the different formulations of the phosphor powder 80.
However, the encapsulation 70 containing the phosphor powder 80 is sealed on top of the base 60 and needs time to gradually solidifiy to form a complete LED. During the period the encapsulation 70 gradually solidifies, the phosphor powder 80 will gradually sink or move towards the bottom due to its own weight and/or the kinetic energy generated when the encapsulation 70 is coated, so that the phosphor powder 80 can not be uniformly distributed within the encapsulation 70, even resulting in some distributions like colonies, which leads to the disadvantage of reduced light flux of an LED, uneven color temperature of the same color light emitting diodes (LED5) and poor color saturation. This is a bottleneck of the conventional encapsulation technology.
As shown in FIG. 2, SMT-type LEDs have also been designed. However, in such LED structure, there also exists the problem that the phosphor powder 80' cannot be uniformly distributed within the encapsulation 70', thereby leading to the disadvantage of reduced light flux of an LED, uneven color temperature of the same color LEDs and poor color saturation. Both of them are the bottlenecks faced by the industry, and eager to be overcome.
SUMMARY OF THE INVENTION
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an LED encapsulation process and a shield structure made thereby, in which the arrangement position of phosphor powder can be maintained.
To achieve the foregoing object, the present invention provides an LED encapsulation process and a shield structure made thereby. The LED encapsulation process comprises the following steps: providing a first encapsulation layer; disposing phosphor powder on a surface of the first encapsulation layer so that the phosphor powder is uniformly distributed on the first encapsulation layer; disposing a second encapsulation layer on the phosphor powder, the second encapsulation layer fully covering the first encapsulation layer so that the phosphor powder is sandwiched between the first encapsulation layer and the second encapsulation layer; heating and stamping the first encapsulation layer, the phosphor powder and the second encapsulation layer to form one piece, or alternatively thermally compressing the first encapsulation layer and the second encapsulation layer; and cutting the piece formed of the first encapsulation layer, the phosphor powder and the second encapsulation layer to form an LED shield.
In this embodiment, the first encapsulation layer and the second encapsulation layer are made of silicone, or are other equivalent encapsulation layers. In the step of providing the first encapsulation layer, liquid silicone is coated on a model and cured to form a thin film-type first encapsulation layer. Furthermore, in the step of disposing the second encapsulation layer on the phosphor powder, liquid silicone is coated on a model and cured to form a thin film-type second encapsulation layer, and then the second encapsulation layer is covered on the surface of the first encapsulation layer with the phosphor powder; or in the step of disposing the second encapsulation layer on the phosphor powder, liquid silicone is coated on the surface of the first encapsulation layer with the phosphor powder. Moreover, in the step of heating and stamping, the outer side surface of the shield is pressed annularly to form a reflecting structure for guiding the direction and angle of light projection.
To achieve the foregoing object, a shield structure made by the aforementioned LED encapsulation process comprises: a first encapsulation layer; phosphor powder uniformly distributed on a surface of the first encapsulation layer; and a second encapsulation layer covering the first encapsulation layer so that the phosphor powder is sandwiched between the first encapsulation layer and the second encapsulation layer. The first encapsulation layer and the second encapsulation layer are made of silicone, or are other equivalent encapsulation layers. Furthermore, the outer side annular surface of the second encapsulation layer of the shield has a reflecting structure for guiding the direction and angle of light projection.
As compared with the prior art, in the present invention, the first encapsulation layer and the second encapsulation layer are disposed stepwise to ensure that the phosphor powder can be uniformly distributed between the two encapsulation layers, and then a thin film of the two layers is compressed to form a shield structure, which is advantageous to be used for sealing at any time in an LED process. Therefore, according to the present invention, the position of the phosphor powder can be maintained without floating or deviation during the forming process. This enables increased light flux in an LED, uniform color temperature of the same color LEDs and improved color saturation.
Hence, the present invention is an innovational encapsulation technology indeed.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic view showing a structure of a first conventional LED; FIG. 2 is a schematic view showing a structure of a second conventional LED; FIG. 3 is a block flow chart of a preferred embodiment according to the present invention; FIGS. 4a to 4g are schematic views corresponding to the steps of a preferred embodiment according to the present invention; and FIGS. 5a to 5e are schematic views corresponding to the steps of another preferred embodiment according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The contents of the present invention will become more apparent from the following description when taken in conjunction with the drawings.
Referring to FIG. 3, there is shown a block flow chart of a preferred embodiment according to the present invention. As shown in FIG. 3, an LED encapsulation process of the present invention comprises the following steps: step 100, providing a first encapsulation layer; step 200, disposing phosphor powder on a surface of the first encapsulation layer so that the phosphor powder is uniformly distributed on the first encapsulation layer; step 300, disposing a second encapsulation layer on the phosphor powder, the second encapsulation layer frilly covering the first encapsulation layer so that the phosphor powder is sandwiched between the fir st encapsulation layer and the second encapsulation layer; step 400, heating and stamping the fir st encapsulation layer, the phosphor powder and the second encapsulation layer to form one piece; and step 500, cutting the piece formed of the first encapsulation layer, the phosphor powder and the second encapsulation layer to form an LED shield.
Simultaneously referring to FIGS. 4a to 4g, there are shown schematic views corresponding to the steps of a preferred embodiment according to the present invention.
As shown in FIG. 4a, which corresponds to the above-mentioned first step 100, when a first encapsulation layer 30 is provided, a thin film formed by such as silicone is used as the first encapsulation layer 30. Liquid silicone is coated on a model and cured to form a thin film-type first encapsulation layer 30. It should be noted that during the coating of liquid silicone in the step of providing first encapsulation layer, the fmishing and flattening procedures are performed to obtain a flat surface.
Next, as shown in FIG. 4b, which corresponds to the second step 200, phosphor powder 40 is disposed on a surface of the first encapsulation layer 30 so that the phosphor powder 40 is uniformly distributed on the first encapsulation layer 30, also as shown in FIG. 5b. One of ordinary skill in the art can easily understand the technology and equipment for uniformly disposing the phosphor layer 40 on the surface of the first encapsulation layer 30, which will be described in no more detail.
Afterwards, as shown in FIG. 4c, which corresponds to the third step 300, a second encapsulation layer 31 is disposed on the phosphor powder 40, and the second encapsulation layer 31 frilly covers the first encapsulation layer 30 so that the phosphor powder 40 is sandwiched between the first encapsulation layer 30 and the second encapsulation layer 31. It should be noted that, in the first embodiment, a thin film formed by such as silicone is similarly used as the second encapsulation layer 31. Liquid silicone is coated on a model and cured to form a thin film-type second encapsulation layer 31, and the formed second encapsulation layer 31 is fully covered on the surface of the first encapsulation layer 30 with the phosphor powder 40. Certainly, the second sealing layer 31 is similarly flattened and finished to obtain a flat surface. Furthermore, as shown by the arrows in FIG. 4d, in this step, the first encapsulation layer 30 and the second encapsulation layer 31 can be heated and stamped so that both of them are bonded with each other into one piece. When the first encapsulation layer 30 and the second encapsulation layer 31 are bonded with each other by thermal compression, the arrangement position of the phosphor powder 40 uniformly distributed therebetween is fixed.
Then, as shown in FIG. 4e, which corresponds to the fourth step 400, the first encapsulation layer 30, the phosphor powder 40 and the second encapsulation layer 31 are heated and stamped to form one piece. The first encapsulation layer 30 and the second encapsulation layer 31 with the phosphor powder 40 sandwiched therebetween are placed between the molds 50,51 followed by stamping, for example, to form a predetermined lens structure.
Finally, as shown in FIG. 41, which corresponds to the fourth step 400, the piece formed of the first encapsulation layer 30, the phosphor powder 40 and the second encapsulation layer 31 is cut to form an LED shield 20, for example, the cylindrical shield 20 as shown in FIG. 4f, which comprises the first encapsulation layer 30 and the second encapsulation layer 31 with the phosphor powder 40 sandwiched therebetween.
It should be noted that, as shown in FIG. 4g, if the molds 50,51 of different shapes are used, the shield 20 can be molded into different shapes, for example, the circular arc-shaped shield 20 as shown in FIG. 4g. In other words, if the shapes of the molds 50,51 used in stamping are changed or the cutting shapes are changed, the shields 20 of different shapes such as conical, prominent grain or cubic shapes can be made, which may be implemented by one of ordinary skill in the art using the concept of this embodiment and will be described and illustrated in no more detail, to provide various shields 20 for sealing chips in an LED process.
Simultaneously referring to FTG. 3 and FIGS. Sa to Sf, there are shown schematic views corresponding to the steps of another preferred embodiment according to the present invention. As shown in these figures, the portions of this embodiment which are the same as or similar to that of the former embodiment have the same reference numerals and therefore explanation of such elements is omitted. However, the structure of the second encapsulation layer is changed, which is slightly different in the implementation of the process.
As the same as the former embodiment, the first step 100 is as shown in FIG. 5a, in which a first encapsulation layer 30 is provided.
The first step 200 is as shown in FIG. Sb, in which phosphor powder 40 is similarly disposed on the first encapsulation layer 30 so that the phosphor powder 40 is uniformly distributed on a surface of the first encapsulation layer 30.
The first step 300 is as shown in FIG. Sc. However, in this step, liquid silicone is used as the second encapsulation layer 31 and uniformly coated on the surface of the first encapsulation layer 30 with the phosphor powder 40 disposed thereon so that the second encapsulation layer 31 fully covers the first encapsulation layer 30. After the second encapsulation layer 31 is cured, the phosphor powder 40 is siniilarly uniformly sandwiched between the first encapsulation layer 30 and the second encapsulation layer 31. It should be noted that after the second encapsulation layer 31 is cured, it still requires the flattening and fmishing procedures to obtain a flat surface.
The fourth step 400 is as shown in FIG. Sd, in which the aforementioned first encapsulation layer 30, phosphor powder 40 and second encapsulation layer 31 are placed between two molds 50 and 51 followed by heating and stamping.
Finally, the fifth step 500 is as shown in FIG. Se, in which the first encapsulation layer 30, the phosphor powder 40 and the second encapsulation layer 31 after stamping can also be cut to form an LED shield 20.
It should be noted that in stamping of the shield 20, a reflecting structure 21 is formed on the periphery of its outer side surface to guide the direction and angle of light projection. The angle can be set to 30 degrees, 60 degrees or 90 degrees based on actual requirements, so that the light can be projected in an appropriate range of angles.
Moreover, since the inner surface of the mold 50 has appropriate embossed patterns 52, when in stamping process, the reflecting structure 21 with patterns will be formed on the surface of the second encapsulation layer 31.
In summarization of the foregoing description, the two encapsulation layers 30, 31 are used to sandwich the phosphor powder 40 in manufacturing the shield 20, so as to maintain the position of the phosphor powder 40 without floating or deviation during the forming process. This enables increased light flux in an LED, uniform color temperature of the same color LEDs and improved color saturation, which are the advantages when the shield 20 structure of the present invention is in use.
However, what are described above are only preferred embodiments of the invention and should not be used to limit the claims of the present invention, and therefore all equivalent substitutions and modifications such as changes in the material or number of the encapsulation layers or changes in the shape of the shield, can made without departing from the spirit and scope of the present invention should be included in the appended claims.
Claims (9)
- WHAT IS CLAIMED IS: 1. An LED encapsulation process, comprising the following steps: providing a first encapsulation layer; disposing phosphor powder on a surface of the first encapsulation layer so that the phosphor powder is uniformly distributed on the first encapsulation layer; disposing a second encapsulation layer on the phosphor powder, the second encapsulation layer fully covering the first encapsulation layer so that the phosphor powder is sandwiched between the first encapsulation layer and the second encapsulation layer; heating and stamping the first encapsulation layer, the phosphor powder and the second encapsulation layer to form one piece; and cutting the piece formed of the first encapsulation layer, the phosphor powder and the second encapsulation layer to form an LED shield.
- 2. The LED encapsulation process of claim 1, wherein the first encapsulation layer and the second encapsulation layer are made of silicone.
- 3. The LED encapsulation process of claim 1, wherein in the step of providing the first encapsulation layer, liquid silicone is coated on a model and cured to form a thin film-type first encapsulation layer.
- 4. The LED encapsulation process of claim 1, wherein in the step of disposing the second encapsulation layer on the phosphor powder, liquid silicone is coated on a model and cured to form a thin film-type second encapsulation layer, and then the second encapsulation layer is covered on the surface of the first encapsulation layer with the phosphor powder.
- 5. The LED encapsulation process of claim 1, wherein in the step of disposing the second encapsulation layer on the phosphor powder, liquid silicone is coated on the surface of the first encapsulation layer with the phosphor powder.
- 6. The LED encapsulation process of claim 1, wherein in the step of heating and stamping, the outer side surface of the shield is pressed annularly to form a reflecting structure for guiding the direction and angle of light projection.
- 7. An LED shield structure, comprising: a first encapsulation layer; phosphor powder uniformly distributed on a surface of the first encapsulation layer; and a second encapsulation layer covering the first encapsulation layer so that the phosphor powder is sandwiched between the first encapsulation layer and the second encapsulation layer.
- 8. The LED shield structure of claim 7, wherein the first encapsulation layer and the second encapsulation layer are made of silicone.
- 9. The LED shield structure of claim 7, wherein the outer side annular surface of the second encapsulation layer of the shield has a reflecting structure for guiding the direction and angle of light projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1016914.2A GB2484332A (en) | 2010-10-07 | 2010-10-07 | LED encapsulation process and shield structure made thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1016914.2A GB2484332A (en) | 2010-10-07 | 2010-10-07 | LED encapsulation process and shield structure made thereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201016914D0 GB201016914D0 (en) | 2010-11-24 |
| GB2484332A true GB2484332A (en) | 2012-04-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1016914.2A Pending GB2484332A (en) | 2010-10-07 | 2010-10-07 | LED encapsulation process and shield structure made thereby |
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| GB (1) | GB2484332A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004158695A (en) * | 2002-11-07 | 2004-06-03 | Okaya Electric Ind Co Ltd | Lamp structure |
| JP2005251849A (en) * | 2004-03-02 | 2005-09-15 | Fujikura Ltd | Light emitting device and its manufacturing method |
| EP1899435A1 (en) * | 2005-07-01 | 2008-03-19 | Lamina Ceramics, Inc. | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
| US20090278151A1 (en) * | 2008-05-07 | 2009-11-12 | Samsung Electronics Co., Ltd. | Light emitting diode packages, light emitting diode systems and methods of manufacturing the same |
| CN201608200U (en) * | 2009-11-06 | 2010-10-13 | 馨意科技股份有限公司 | Adhesive sealed encloser for light emitting diodes (LEDs) |
| US20100264439A1 (en) * | 2009-04-20 | 2010-10-21 | Power Data Communications Co., Ltd. | Led package structure |
| US20100277891A1 (en) * | 2009-04-29 | 2010-11-04 | Power Data Communications Co., Ltd. | Led casing structure |
| WO2010132160A1 (en) * | 2009-05-15 | 2010-11-18 | Peiching Ling | Methods and apparatus for forming uniform particle layers of phosphor material on a surface |
| WO2010140417A1 (en) * | 2009-06-05 | 2010-12-09 | コニカミノルタオプト株式会社 | Method for producing glass member for wavelength conversion |
-
2010
- 2010-10-07 GB GB1016914.2A patent/GB2484332A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004158695A (en) * | 2002-11-07 | 2004-06-03 | Okaya Electric Ind Co Ltd | Lamp structure |
| JP2005251849A (en) * | 2004-03-02 | 2005-09-15 | Fujikura Ltd | Light emitting device and its manufacturing method |
| EP1899435A1 (en) * | 2005-07-01 | 2008-03-19 | Lamina Ceramics, Inc. | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
| US20090278151A1 (en) * | 2008-05-07 | 2009-11-12 | Samsung Electronics Co., Ltd. | Light emitting diode packages, light emitting diode systems and methods of manufacturing the same |
| US20100264439A1 (en) * | 2009-04-20 | 2010-10-21 | Power Data Communications Co., Ltd. | Led package structure |
| US20100277891A1 (en) * | 2009-04-29 | 2010-11-04 | Power Data Communications Co., Ltd. | Led casing structure |
| WO2010132160A1 (en) * | 2009-05-15 | 2010-11-18 | Peiching Ling | Methods and apparatus for forming uniform particle layers of phosphor material on a surface |
| WO2010140417A1 (en) * | 2009-06-05 | 2010-12-09 | コニカミノルタオプト株式会社 | Method for producing glass member for wavelength conversion |
| CN201608200U (en) * | 2009-11-06 | 2010-10-13 | 馨意科技股份有限公司 | Adhesive sealed encloser for light emitting diodes (LEDs) |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201016914D0 (en) | 2010-11-24 |
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