GB2468756B - Optoelectronic semiconductor component - Google Patents
Optoelectronic semiconductor componentInfo
- Publication number
- GB2468756B GB2468756B GB1004128.3A GB201004128A GB2468756B GB 2468756 B GB2468756 B GB 2468756B GB 201004128 A GB201004128 A GB 201004128A GB 2468756 B GB2468756 B GB 2468756B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor component
- optoelectronic semiconductor
- optoelectronic
- component
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009001534A DE102009001534B4 (en) | 2009-03-13 | 2009-03-13 | Photosensitive electronic component and method for producing a housing cover |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201004128D0 GB201004128D0 (en) | 2010-04-28 |
GB2468756A GB2468756A (en) | 2010-09-22 |
GB2468756B true GB2468756B (en) | 2013-09-18 |
Family
ID=42261470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1004128.3A Active GB2468756B (en) | 2009-03-13 | 2010-03-12 | Optoelectronic semiconductor component |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN101834220B (en) |
DE (1) | DE102009001534B4 (en) |
GB (1) | GB2468756B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9515469B2 (en) | 2012-12-14 | 2016-12-06 | General Electric Company | Vacuum feed-through assembly |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1311208A (en) * | 1969-05-01 | 1973-03-28 | Texas Instruments Inc | Semiconductor switch |
GB2031225A (en) * | 1978-09-15 | 1980-04-16 | Westinghouse Electric Corp | Glass-sealed thyristor junctions |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3740416A1 (en) * | 1987-11-28 | 1989-06-08 | Winter & Ibe Olympus | Endoscope optics with a distal window |
DE19502006A1 (en) * | 1995-01-24 | 1996-08-01 | Heraeus Noblelight Gmbh | Optical component with vacuum-tight housing |
DE10026651C1 (en) * | 2000-05-29 | 2001-07-26 | Siemens Ag | Material composite used in the production of a housing for a thyristor consists of an aluminum oxide sapphire and an aluminum oxide ceramic sintered via connecting layers |
DE10352670A1 (en) | 2003-11-11 | 2005-06-16 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Electric component with equaliser of temperature caused mechanical stresses, connecting two part-elements with different length expansion coefficients, e.g. for optical components, i.e. glass plate connected to copper electrode etc |
-
2009
- 2009-03-13 DE DE102009001534A patent/DE102009001534B4/en active Active
-
2010
- 2010-03-12 GB GB1004128.3A patent/GB2468756B/en active Active
- 2010-03-12 CN CN201010133199.7A patent/CN101834220B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1311208A (en) * | 1969-05-01 | 1973-03-28 | Texas Instruments Inc | Semiconductor switch |
GB2031225A (en) * | 1978-09-15 | 1980-04-16 | Westinghouse Electric Corp | Glass-sealed thyristor junctions |
Also Published As
Publication number | Publication date |
---|---|
GB201004128D0 (en) | 2010-04-28 |
GB2468756A (en) | 2010-09-22 |
CN101834220A (en) | 2010-09-15 |
CN101834220B (en) | 2014-07-09 |
DE102009001534B4 (en) | 2012-10-04 |
DE102009001534A1 (en) | 2010-09-23 |
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