GB2468756B - Optoelectronic semiconductor component - Google Patents

Optoelectronic semiconductor component

Info

Publication number
GB2468756B
GB2468756B GB1004128.3A GB201004128A GB2468756B GB 2468756 B GB2468756 B GB 2468756B GB 201004128 A GB201004128 A GB 201004128A GB 2468756 B GB2468756 B GB 2468756B
Authority
GB
United Kingdom
Prior art keywords
semiconductor component
optoelectronic semiconductor
optoelectronic
component
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1004128.3A
Other versions
GB201004128D0 (en
GB2468756A (en
Inventor
Heinrich Gerstenkorper
Harald Nobel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Bipolar GmbH and Co KG
Original Assignee
Infineon Technologies Bipolar GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Bipolar GmbH and Co KG filed Critical Infineon Technologies Bipolar GmbH and Co KG
Publication of GB201004128D0 publication Critical patent/GB201004128D0/en
Publication of GB2468756A publication Critical patent/GB2468756A/en
Application granted granted Critical
Publication of GB2468756B publication Critical patent/GB2468756B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)
  • Thyristors (AREA)
GB1004128.3A 2009-03-13 2010-03-12 Optoelectronic semiconductor component Active GB2468756B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009001534A DE102009001534B4 (en) 2009-03-13 2009-03-13 Photosensitive electronic component and method for producing a housing cover

Publications (3)

Publication Number Publication Date
GB201004128D0 GB201004128D0 (en) 2010-04-28
GB2468756A GB2468756A (en) 2010-09-22
GB2468756B true GB2468756B (en) 2013-09-18

Family

ID=42261470

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1004128.3A Active GB2468756B (en) 2009-03-13 2010-03-12 Optoelectronic semiconductor component

Country Status (3)

Country Link
CN (1) CN101834220B (en)
DE (1) DE102009001534B4 (en)
GB (1) GB2468756B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9515469B2 (en) 2012-12-14 2016-12-06 General Electric Company Vacuum feed-through assembly

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1311208A (en) * 1969-05-01 1973-03-28 Texas Instruments Inc Semiconductor switch
GB2031225A (en) * 1978-09-15 1980-04-16 Westinghouse Electric Corp Glass-sealed thyristor junctions

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3740416A1 (en) * 1987-11-28 1989-06-08 Winter & Ibe Olympus Endoscope optics with a distal window
DE19502006A1 (en) * 1995-01-24 1996-08-01 Heraeus Noblelight Gmbh Optical component with vacuum-tight housing
DE10026651C1 (en) * 2000-05-29 2001-07-26 Siemens Ag Material composite used in the production of a housing for a thyristor consists of an aluminum oxide sapphire and an aluminum oxide ceramic sintered via connecting layers
DE10352670A1 (en) 2003-11-11 2005-06-16 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Electric component with equaliser of temperature caused mechanical stresses, connecting two part-elements with different length expansion coefficients, e.g. for optical components, i.e. glass plate connected to copper electrode etc

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1311208A (en) * 1969-05-01 1973-03-28 Texas Instruments Inc Semiconductor switch
GB2031225A (en) * 1978-09-15 1980-04-16 Westinghouse Electric Corp Glass-sealed thyristor junctions

Also Published As

Publication number Publication date
GB201004128D0 (en) 2010-04-28
GB2468756A (en) 2010-09-22
CN101834220A (en) 2010-09-15
CN101834220B (en) 2014-07-09
DE102009001534B4 (en) 2012-10-04
DE102009001534A1 (en) 2010-09-23

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