DE102009001534B4 - Photosensitive electronic component and method for producing a housing cover - Google Patents
Photosensitive electronic component and method for producing a housing cover Download PDFInfo
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- DE102009001534B4 DE102009001534B4 DE102009001534A DE102009001534A DE102009001534B4 DE 102009001534 B4 DE102009001534 B4 DE 102009001534B4 DE 102009001534 A DE102009001534 A DE 102009001534A DE 102009001534 A DE102009001534 A DE 102009001534A DE 102009001534 B4 DE102009001534 B4 DE 102009001534B4
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- housing
- housing cover
- opening
- web
- light
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000003801 milling Methods 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 29
- 229910000679 solder Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005382 thermal cycling Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- ASTZLJPZXLHCSM-UHFFFAOYSA-N dioxido(oxo)silane;manganese(2+) Chemical compound [Mn+2].[O-][Si]([O-])=O ASTZLJPZXLHCSM-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
- Thyristors (AREA)
Abstract
Die Erfindung betrifft ein lichtempfindliches, elektronisches Bauelement, das ein hermetisch verschlossenes, einen Gehäusedeckel (11) aufweisendes Gehäuse (10; 11, 12, 13) aus Metall, das eine durchgehende Öffnung (14) aufweist, einen Halbleiter-Chip (20) mit einem lichtempfindlichen Bereich, der in dem Gehäuse angeordnet ist, und eine lichtdurchlässige Scheibe (40) aufweist, die derart an der Öffnung (14) angeordnet ist, dass durch die Öffnung (14) und die Scheibe (40) Licht durch das Gehäuse (10) auf den lichtempfindlichen Bereich des Halbleiter-Chips (20) fallen kann und dass die Scheibe (40) die Öffnung (14) hermetisch verschließt. An einer Oberfläche (111) des Gehäusedeckels (11) ist ein umlaufender, durch eine am Gehäusedeckel (11) angeordnete Hülse gebildeter Steg aus Metall (112) ausgebildet, mit dessen Stirnseite die lichtdurchlässige Scheibe (40) stoffschlüssig verbunden ist, wobei der Steg (112) eine Höhe h und eine Dicke t aufweist und das Verhältnis t/h kleiner oder gleich 1/5 ist und der Steg (112) mit dem Gehäusedeckel (11) einstückig ausgebildet ist.The invention relates to a light-sensitive, electronic component which has a hermetically sealed housing (10; 11, 12, 13) made of metal, which has a housing cover (11) and has a through opening (14), and a semiconductor chip (20) a photosensitive region which is arranged in the housing and has a light-transmissive disk (40) which is arranged on the opening (14) in such a way that through the opening (14) and the disk (40) light through the housing (10 ) can fall on the light-sensitive area of the semiconductor chip (20) and that the disc (40) hermetically closes the opening (14). A circumferential web made of metal (112) formed by a sleeve arranged on the housing cover (11) is formed on a surface (111) of the housing cover (11). 112) has a height h and a thickness t and the ratio t / h is less than or equal to 1/5 and the web (112) is formed in one piece with the housing cover (11).
Description
Die Erfindung betrifft ein optoelektronisches Halbleiterbauelement, insbesondere die Lichtdurchführung bei lichtzündbaren Thyristoren (light triggered thyristors, LTT).The invention relates to an optoelectronic semiconductor component, in particular the passage of light in the case of light-triggered thyristors (LTT).
Optoelektronische Bauelemente werden beispielsweise dann eingesetzt, wenn eine Potentialtrennung zwischen zwei unterschiedlichen Teilen einer elektrischen Schaltung gewünscht wird, wobei ein Teil oft Leistungselektronikkomponenten umfasst, die bei hohen Spannungen und/oder Strömen betrieben werden, und der andere Teil eine Steuerelektronik im Schwachstrombereich umfasst. Als Beispiel seien lichtzündbare Thyristoren genannt, die in Stromrichteranlagen in der Hochspannungs-Gleichstrom-Übertragungstechnik (HGÜ-Technik, high-voltage direct-current power transmission, HVDC power transmission) eingesetzt werden. In deren Gehäuse befindet sich ein lichtdurchlässiges Fenster, durch das über ein Glasfaserkabel Licht zugeführt wird. Durch das Glasfaserkabel und das Fenster kann ein Lichtimpuls einer Laserdiode zu den lichtempfindlichen Bereichen des Halbleiter-Chips geführt und so das im Chip integrierte elektronische Bauteil aktiviert werden.Optoelectronic components are used, for example, when a potential separation between two different parts of an electrical circuit is desired, wherein a part often includes power electronics components that are operated at high voltages and / or currents, and the other part includes control electronics in the low-current range. Examples which may be mentioned are light-ignitable thyristors which are used in converter installations in high-voltage direct-current transmission technology (HVDC technology, high-voltage direct-current power transmission, HVDC power transmission). In the housing there is a translucent window through which light is supplied via a fiber optic cable. Through the fiber optic cable and the window, a light pulse of a laser diode can be led to the photosensitive areas of the semiconductor chip, thus activating the integrated electronic component in the chip.
Derartige elektronische Leistungsbauelemente unterliegen starken Temperaturwechselbelastungen. Unterschiedliche Temperaturausdehnungskoeffizienten (coefficient of thermal expansion, CTE) verschiedener Gehäusekomponenten können dabei ein Problem darstellen. Insbesondere ist die Lichtdurchführung durch das Gehäuse, d. h. die Befestigung der Lichtdurchlässigen Scheibe, die beispielsweise aus Glas oder einer Glaskeramik (z. B. Mangan-Silikat-Glas) besteht, an dem Kupfergehäuse aufgrund der unterschiedlichen thermischen Ausdehnungskoeffizienten von Kupfer (oder auch Aluminium oder entsprechenden metallischen Legierungen) und Glas problematisch und bedarf beim Entwurf des Bauelementes besonderer Berücksichtigung.Such electronic power components are subject to strong thermal cycling. Different coefficients of thermal expansion (CTE) of different housing components can be a problem here. In particular, the light passage through the housing, d. H. the attachment of the translucent pane, which consists for example of glass or a glass ceramic (eg., Manganese silicate glass), the copper housing due to the different thermal expansion coefficients of copper (or aluminum or corresponding metallic alloys) and glass problematic and needs in the design of the component special consideration.
Bei bekannten Bauteilen sind diese Verbindungen zwischen Glas und Metall komplex aufgebaut. So kann z. B. die Glasscheibe nicht direkt mit dem Kupfer verbunden (z. B. verlötet) werden, sondern es sind Ausgleichsstücke aus Keramik und/oder Metall zwischen Glas und Metallgehäuse notwendig, um die unterschiedlichen thermischen Dehnungen auszugleichen und die entstehenden mechanischen Spannungen aufzunehmen. Derartige Verbindungen sind daher aufwändig in der Herstellung, was das Endprodukt insgesamt verteuert.In known components, these connections between glass and metal are complex. So z. For example, the glass sheet may not be directly bonded (eg, soldered) to the copper, but shims made of ceramic and / or metal between the glass and metal housing are necessary to balance the different thermal strains and absorb the resulting stresses. Such compounds are therefore complicated to manufacture, which makes the end product more expensive.
Aus der
Ebenso zeigt die
Es ist eine Aufgabe der vorliegenden Erfindung, ein durch licht aktivierbares elektronisches Bauelement zur Verfügung zu stellen, das eine möglichst einfach herzustellende, vakuumdichte Lichtdurchführung aufweist. Es ist eine weitere Aufgabe der Erfindung ein entsprechendes Herstellungsverfahren anzugeben.It is an object of the present invention to provide a light-activatable electronic component which has a vacuum-tight light feedthrough which is as simple as possible to produce. It is a further object of the invention to provide a corresponding manufacturing method.
Die oben genannten Aufgaben werden durch das elektronische Bauteil gemäß Anspruch 1 und durch das Herstellungsverfahren gemäß Anspruch 7 gelöst. Unterschiedliche Weiterbildungen der Erfindung sind Gegenstand der Unteransprüche.The above objects are achieved by the electronic component according to
Im Folgenden wird als ein Beispiel der Erfindung ein durch Licht aktivierbares elektronisches Bauelement offenbart. Das Bauelement weist auf: ein hermetisch verschlossenes, einen Gehäusedeckel aufweisendes Gehäuse aus Metall, das eine durchgehende Öffnung aufweist; einen Halbleiter-Chip mit einem lichtempfindlichen Bereich, der in dem Gehäuse angeordnet ist; eine lichtdurchlässige Scheibe, die derart an der Öffnung angeordnet ist, dass durch die Öffnung und die Scheibe Licht durch das Gehäuse auf den lichtempfindlichen Bereich des Halbleiter-Chips fallen kann und dass die Scheibe die Öffnung hermetisch verschließt. An einer Oberfläche des Gehäusedeckels ist ein umlaufender, durch eine am Gehäusedeckel angeordnete Hülse gebildeter Steg aus Metall ausgebildet, mit dessen Stirnseite die lichtdurchlässige Scheibe stoffschlüssig verbunden ist, wobei der Steg eine Höhe h und eine Dicke t aufweist und das Verhältnis t/h kleiner oder gleich 1/5 ist und der Steg mit dem Gehäusedeckel einstückig ausgebildet ist.Hereinafter, as an example of the invention, a photoactivatable electronic device is disclosed. The component comprises: a hermetically sealed, a housing cover having housing made of metal, which has a through hole; a semiconductor chip having a photosensitive region disposed in the housing; a translucent disk disposed on the aperture such that light may pass through the housing and onto the photosensitive region of the semiconductor chip through the aperture and the disk and that the disk hermetically seals the aperture. On a surface of the housing cover is a circumferential, arranged by a sleeve on the housing cover formed web made of metal, with the end face of the translucent disc is integrally connected, wherein the web has a height h and a thickness t and the ratio t / h is less than or equal to 1/5 and the web is integrally formed with the housing cover.
Die folgenden Figuren und die weitere Beschreibung sollen helfen, die Erfindung besser zu verstehen. Die Elemente in den Figuren sind nicht unbedingt als Einschränkung zu verstehen, vielmehr wird Wert darauf gelegt, das Prinzip der Erfindung darzustellen. In den Figuren bezeichnen gleiche Bezugszeichen korrespondierende Teile.The following figures and the further description are intended to help to better understand the invention. The elements in the figures are not necessarily to be construed as limiting, rather value is placed to represent the principle of the invention. In the figures, like reference numerals designate corresponding parts.
Zum Zünden des Leistungshalbleiterbauelements
Um das Leistungshalbleiterbauelement
Beispielsweise kann die Glasscheibe (
Das Problem, welches eine derartige Glas-Metall-Verbindung mit sich bringt, wird deutlich, wenn das Gehäuse
Um das oben erläuterte Problem zu lösen, können beispielsweise zwischen die Glasscheibe (
Das Ende der Bohrung
An einer Stirnseite des umlaufenden Steges
Da die Bauform des Gehäuses meist zylindrisch ist, kann der Deckel
Der Steg
Es hat sich gezeigt, dass obiges Kriterium erfüllt ist, wenn bei Stegen mit einer Höhe h von größer oder gleich 2 mm die Wandstärke t kleiner ist als 0,25 mm, z. B. kleiner oder gleich 0,20 mm.It has been shown that the above criterion is met if, for webs with a height h of greater than or equal to 2 mm, the wall thickness t is less than 0.25 mm, z. B. less than or equal to 0.20 mm.
Gemäß der vorliegenden Erfindung ist das Verhältnis zwischen Wandstärke t und der Höhe h des (hier kreisringförmigen) Steges
Claims (7)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009001534A DE102009001534B4 (en) | 2009-03-13 | 2009-03-13 | Photosensitive electronic component and method for producing a housing cover |
GB1004128.3A GB2468756B (en) | 2009-03-13 | 2010-03-12 | Optoelectronic semiconductor component |
CN201010133199.7A CN101834220B (en) | 2009-03-13 | 2010-03-12 | Optoelectronic semiconductor component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009001534A DE102009001534B4 (en) | 2009-03-13 | 2009-03-13 | Photosensitive electronic component and method for producing a housing cover |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102009001534A1 DE102009001534A1 (en) | 2010-09-23 |
DE102009001534B4 true DE102009001534B4 (en) | 2012-10-04 |
Family
ID=42261470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE102009001534A Active DE102009001534B4 (en) | 2009-03-13 | 2009-03-13 | Photosensitive electronic component and method for producing a housing cover |
Country Status (3)
Country | Link |
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CN (1) | CN101834220B (en) |
DE (1) | DE102009001534B4 (en) |
GB (1) | GB2468756B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US9515469B2 (en) | 2012-12-14 | 2016-12-06 | General Electric Company | Vacuum feed-through assembly |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19502006A1 (en) * | 1995-01-24 | 1996-08-01 | Heraeus Noblelight Gmbh | Optical component with vacuum-tight housing |
DE10026651C1 (en) * | 2000-05-29 | 2001-07-26 | Siemens Ag | Material composite used in the production of a housing for a thyristor consists of an aluminum oxide sapphire and an aluminum oxide ceramic sintered via connecting layers |
DE10352670A1 (en) * | 2003-11-11 | 2005-06-16 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Electric component with equaliser of temperature caused mechanical stresses, connecting two part-elements with different length expansion coefficients, e.g. for optical components, i.e. glass plate connected to copper electrode etc |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1311208A (en) * | 1969-05-01 | 1973-03-28 | Texas Instruments Inc | Semiconductor switch |
GB2031225B (en) * | 1978-09-15 | 1983-07-20 | Westinghouse Electric Corp | Glass-sealed thyristor junctions |
DE3740416A1 (en) * | 1987-11-28 | 1989-06-08 | Winter & Ibe Olympus | Endoscope optics with a distal window |
-
2009
- 2009-03-13 DE DE102009001534A patent/DE102009001534B4/en active Active
-
2010
- 2010-03-12 GB GB1004128.3A patent/GB2468756B/en active Active
- 2010-03-12 CN CN201010133199.7A patent/CN101834220B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19502006A1 (en) * | 1995-01-24 | 1996-08-01 | Heraeus Noblelight Gmbh | Optical component with vacuum-tight housing |
DE10026651C1 (en) * | 2000-05-29 | 2001-07-26 | Siemens Ag | Material composite used in the production of a housing for a thyristor consists of an aluminum oxide sapphire and an aluminum oxide ceramic sintered via connecting layers |
DE10352670A1 (en) * | 2003-11-11 | 2005-06-16 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Electric component with equaliser of temperature caused mechanical stresses, connecting two part-elements with different length expansion coefficients, e.g. for optical components, i.e. glass plate connected to copper electrode etc |
Also Published As
Publication number | Publication date |
---|---|
CN101834220B (en) | 2014-07-09 |
DE102009001534A1 (en) | 2010-09-23 |
GB2468756A (en) | 2010-09-22 |
CN101834220A (en) | 2010-09-15 |
GB201004128D0 (en) | 2010-04-28 |
GB2468756B (en) | 2013-09-18 |
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