GB2412494B - Maskless particle-beam system for exposing a pattern on a substrate - Google Patents

Maskless particle-beam system for exposing a pattern on a substrate

Info

Publication number
GB2412494B
GB2412494B GB0512347A GB0512347A GB2412494B GB 2412494 B GB2412494 B GB 2412494B GB 0512347 A GB0512347 A GB 0512347A GB 0512347 A GB0512347 A GB 0512347A GB 2412494 B GB2412494 B GB 2412494B
Authority
GB
United Kingdom
Prior art keywords
exposing
pattern
substrate
beam system
maskless particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0512347A
Other versions
GB0512347D0 (en
GB2412494A (en
Inventor
Elmar Platzgummer
Hans Loeschner
Gerhard Stengl
Herbert Vonach
Alfred Chalupka
Gertraud Lammer
Herbert Buschbeck
Robert Nowak
Till Windischbauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IMS Nanofabrication GmbH
Original Assignee
IMS Nanofabrication GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IMS Nanofabrication GmbH filed Critical IMS Nanofabrication GmbH
Priority claimed from GB0300693A external-priority patent/GB2389454B/en
Publication of GB0512347D0 publication Critical patent/GB0512347D0/en
Publication of GB2412494A publication Critical patent/GB2412494A/en
Application granted granted Critical
Publication of GB2412494B publication Critical patent/GB2412494B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
GB0512347A 2002-01-17 2003-01-13 Maskless particle-beam system for exposing a pattern on a substrate Expired - Lifetime GB2412494B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AT762002 2002-01-17
AT4342002 2002-03-21
GB0300693A GB2389454B (en) 2002-01-17 2003-01-13 Maskless particle-beam system for exposing a pattern on a substrate

Publications (3)

Publication Number Publication Date
GB0512347D0 GB0512347D0 (en) 2005-07-27
GB2412494A GB2412494A (en) 2005-09-28
GB2412494B true GB2412494B (en) 2006-02-01

Family

ID=34915802

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0512347A Expired - Lifetime GB2412494B (en) 2002-01-17 2003-01-13 Maskless particle-beam system for exposing a pattern on a substrate

Country Status (1)

Country Link
GB (1) GB2412494B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260579A (en) * 1991-03-13 1993-11-09 Fujitsu Limited Charged particle beam exposure system and charged particle beam exposure method
JPH11195590A (en) * 1998-01-05 1999-07-21 Canon Inc Multiple electron beam exposure method and its apparatus, and manufacture of device
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
EP1033741A2 (en) * 1999-03-02 2000-09-06 Advantest Corporation Charged-particle beam lithography system
GB2351427A (en) * 1999-02-03 2000-12-27 Advantest Corp Charged particle beam exposure apparatus and exposure method
US20010054690A1 (en) * 2000-03-31 2001-12-27 Yasuhiro Shimada Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260579A (en) * 1991-03-13 1993-11-09 Fujitsu Limited Charged particle beam exposure system and charged particle beam exposure method
JPH11195590A (en) * 1998-01-05 1999-07-21 Canon Inc Multiple electron beam exposure method and its apparatus, and manufacture of device
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
GB2351427A (en) * 1999-02-03 2000-12-27 Advantest Corp Charged particle beam exposure apparatus and exposure method
EP1033741A2 (en) * 1999-03-02 2000-09-06 Advantest Corporation Charged-particle beam lithography system
US20010054690A1 (en) * 2000-03-31 2001-12-27 Yasuhiro Shimada Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method

Also Published As

Publication number Publication date
GB0512347D0 (en) 2005-07-27
GB2412494A (en) 2005-09-28

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20100325 AND 20100331

PE20 Patent expired after termination of 20 years

Expiry date: 20230112