GB2333520B - GaN crystal growth method - Google Patents

GaN crystal growth method

Info

Publication number
GB2333520B
GB2333520B GB9909954A GB9909954A GB2333520B GB 2333520 B GB2333520 B GB 2333520B GB 9909954 A GB9909954 A GB 9909954A GB 9909954 A GB9909954 A GB 9909954A GB 2333520 B GB2333520 B GB 2333520B
Authority
GB
United Kingdom
Prior art keywords
crystal growth
growth method
gan crystal
gan
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9909954A
Other versions
GB2333520A (en
GB9909954D0 (en
Inventor
Masatomo Shibata
Takashi Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22162897A external-priority patent/JP3622440B2/en
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority claimed from GB9812653A external-priority patent/GB2326160B/en
Publication of GB9909954D0 publication Critical patent/GB9909954D0/en
Publication of GB2333520A publication Critical patent/GB2333520A/en
Application granted granted Critical
Publication of GB2333520B publication Critical patent/GB2333520B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0722—Preparation by direct nitridation of aluminium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/067—Aluminium nitrides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9909954A 1997-06-11 1998-06-11 GaN crystal growth method Expired - Fee Related GB2333520B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15375597 1997-06-11
JP22162897A JP3622440B2 (en) 1997-08-18 1997-08-18 Method for growing nitride crystal and method for growing GaN crystal
JP29256197 1997-10-24
GB9812653A GB2326160B (en) 1997-06-11 1998-06-11 Nitride crystal fabricating method

Publications (3)

Publication Number Publication Date
GB9909954D0 GB9909954D0 (en) 1999-06-30
GB2333520A GB2333520A (en) 1999-07-28
GB2333520B true GB2333520B (en) 2000-04-26

Family

ID=27451799

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9909959A Expired - Fee Related GB2333521B (en) 1997-06-11 1998-06-11 Nitride crystal growth method
GB9909954A Expired - Fee Related GB2333520B (en) 1997-06-11 1998-06-11 GaN crystal growth method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9909959A Expired - Fee Related GB2333521B (en) 1997-06-11 1998-06-11 Nitride crystal growth method

Country Status (1)

Country Link
GB (2) GB2333521B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119306B1 (en) * 1999-08-02 2000-12-18 住友電気工業株式会社 Crystal growth container and crystal growth method
PL207400B1 (en) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Method of and apparatus for obtaining voluminous, gallium containing, monocrystalline nitride
RU2296189C2 (en) 2001-06-06 2007-03-27 АММОНО Сп.з о.о. Method and apparatus for producing three-dimensional monocrystalline gallium-containing nitride (variants)
US7057211B2 (en) 2001-10-26 2006-06-06 Ammono Sp. Zo.O Nitride semiconductor laser device and manufacturing method thereof
JP4693351B2 (en) 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン Epitaxial growth substrate
US7125453B2 (en) 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US20030140845A1 (en) * 2002-01-31 2003-07-31 General Electric Company Pressure vessel
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
TWI274735B (en) 2002-05-17 2007-03-01 Ammono Sp Zoo Bulk single crystal production facility employing supercritical ammonia
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
PL225427B1 (en) 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Light emitting element structure having nitride bulk single crystal layer
WO2004053210A1 (en) 2002-12-11 2004-06-24 Ammono Sp. Z O.O. A substrate for epitaxy and a method of preparing the same
TWI334890B (en) 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
KR100848380B1 (en) 2004-06-11 2008-07-25 암모노 에스피. 제트오. 오. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (en) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Method for manufacture of volumetric monocrystals by their growth on crystal nucleus
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149899A (en) * 1981-03-06 1982-09-16 Natl Inst For Res In Inorg Mater Manufacture of cubic system boron nitride
JPS60122797A (en) * 1983-12-07 1985-07-01 Toshiba Corp Production of aluminum nitride single crystal
US4875967A (en) * 1987-05-01 1989-10-24 National Institute For Research In Inorganic Materials Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149899A (en) * 1981-03-06 1982-09-16 Natl Inst For Res In Inorg Mater Manufacture of cubic system boron nitride
JPS60122797A (en) * 1983-12-07 1985-07-01 Toshiba Corp Production of aluminum nitride single crystal
US4875967A (en) * 1987-05-01 1989-10-24 National Institute For Research In Inorganic Materials Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
WPI abstract 82-91228E & JP570149899A *
WPI abstract 85-194408 & JP600122797A *

Also Published As

Publication number Publication date
GB2333521A (en) 1999-07-28
GB9909959D0 (en) 1999-06-30
GB2333520A (en) 1999-07-28
GB2333521B (en) 2000-04-26
GB9909954D0 (en) 1999-06-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050611