GB2326160B - Nitride crystal fabricating method - Google Patents

Nitride crystal fabricating method

Info

Publication number
GB2326160B
GB2326160B GB9812653A GB9812653A GB2326160B GB 2326160 B GB2326160 B GB 2326160B GB 9812653 A GB9812653 A GB 9812653A GB 9812653 A GB9812653 A GB 9812653A GB 2326160 B GB2326160 B GB 2326160B
Authority
GB
United Kingdom
Prior art keywords
nitride crystal
fabricating method
crystal fabricating
nitride
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9812653A
Other versions
GB9812653D0 (en
GB2326160A (en
Inventor
Masatomo Shibata
Takashi Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22162897A external-priority patent/JP3622440B2/en
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to GB9909954A priority Critical patent/GB2333520B/en
Priority to GB9909959A priority patent/GB2333521B/en
Publication of GB9812653D0 publication Critical patent/GB9812653D0/en
Publication of GB2326160A publication Critical patent/GB2326160A/en
Application granted granted Critical
Publication of GB2326160B publication Critical patent/GB2326160B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0722—Preparation by direct nitridation of aluminium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9812653A 1997-06-11 1998-06-11 Nitride crystal fabricating method Expired - Fee Related GB2326160B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9909954A GB2333520B (en) 1997-06-11 1998-06-11 GaN crystal growth method
GB9909959A GB2333521B (en) 1997-06-11 1998-06-11 Nitride crystal growth method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15375597 1997-06-11
JP22162897A JP3622440B2 (en) 1997-08-18 1997-08-18 Method for growing nitride crystal and method for growing GaN crystal
JP29256197 1997-10-24

Publications (3)

Publication Number Publication Date
GB9812653D0 GB9812653D0 (en) 1998-08-12
GB2326160A GB2326160A (en) 1998-12-16
GB2326160B true GB2326160B (en) 1999-11-03

Family

ID=27320530

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9812061.1A Pending GB9812061D0 (en) 1997-06-11 1998-06-04 Method of fabricating nitride crystal,liquid phase growth method,nitride crystal,nitride crystal powders,and vapor phase growth method
GB9812653A Expired - Fee Related GB2326160B (en) 1997-06-11 1998-06-11 Nitride crystal fabricating method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB9812061.1A Pending GB9812061D0 (en) 1997-06-11 1998-06-04 Method of fabricating nitride crystal,liquid phase growth method,nitride crystal,nitride crystal powders,and vapor phase growth method

Country Status (4)

Country Link
KR (4) KR100322374B1 (en)
DE (1) DE19826003A1 (en)
GB (2) GB9812061D0 (en)
TW (1) TW519551B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750355B2 (en) 2001-10-26 2010-07-06 Ammono Sp. Z O.O. Light emitting element structure using nitride bulk single crystal layer
US7871843B2 (en) 2002-05-17 2011-01-18 Ammono. Sp. z o.o. Method of preparing light emitting device

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2796657B1 (en) * 1999-07-20 2001-10-26 Thomson Csf PROCESS FOR THE SYNTHESIS OF SOLID MONOCRYSTALLINE MATERIALS IN NITRIDES OF ELEMENTS OF COLUMN III OF THE TABLE OF THE PERIODIC CLASSIFICATION
PL207400B1 (en) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Method of and apparatus for obtaining voluminous, gallium containing, monocrystalline nitride
EP1770189B1 (en) 2001-06-06 2013-07-10 Ammono S.A. Apparatus for obtaining bulk monocrystalline gallium-containing nitride
IL161420A0 (en) 2001-10-26 2004-09-27 Ammono Sp Zoo Substrate for epitaxy
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
WO2003098757A1 (en) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
AU2002354463A1 (en) 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
CN100339512C (en) 2002-06-26 2007-09-26 波兰商艾蒙诺公司 Improvemrnt of process for obtaining of bulk monocrystallline gallium-containing nitride
KR101088991B1 (en) 2002-12-11 2011-12-01 니치아 카가쿠 고교 가부시키가이샤 Process for obtaining bulk monocrystalline gallium-containing nitride
PL224991B1 (en) 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością A substrate for epitaxy and a method of preparing the same
EP1734158B1 (en) * 2004-03-31 2012-01-04 NGK Insulators, Ltd. Gallium nitride single crystal growing method
WO2005111278A1 (en) * 2004-05-19 2005-11-24 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor crystal, method for producing same, and group iii nitride semiconductor device
PL1769105T3 (en) 2004-06-11 2014-11-28 Ammono S A Bulk mono-crystalline gallium nitride and method for its preparation
PL371405A1 (en) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Method for manufacture of volumetric monocrystals by their growth on crystal nucleus
CA2608102C (en) 2005-05-12 2011-03-15 Seiji Sarayama Method of producing group iii nitride crystal, apparatus for producing group iii nitride crystal, and group iii nitride crystal
KR20140053184A (en) * 2011-07-13 2014-05-07 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Growth of bulk group-iii nitride crystals
KR102271060B1 (en) * 2018-05-18 2021-06-29 연세대학교 산학협력단 Layered AlN, manufacturing method thereof and exfoliated AlN nanosheet therefrom
CN112899784B (en) * 2021-01-20 2022-06-17 中国科学院苏州纳米技术与纳米仿生研究所 Gallium nitride (11-22) single crystal substrate and method for producing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1551403A (en) * 1975-06-13 1979-08-30 Philips Electronic Associated Method of manufacturing single crystals of gallium nitride
GB2127709A (en) * 1982-10-06 1984-04-18 Univ Edinburgh Manufacture of aluminium nitride
JPH01145309A (en) * 1987-11-30 1989-06-07 Idemitsu Petrochem Co Ltd Production of metallic nitride and device therefor
JPH04154607A (en) * 1990-10-17 1992-05-27 Showa Alum Corp Method for producing aluminum nitride powder
JPH07277897A (en) * 1994-04-04 1995-10-24 Katsutoshi Yoneya Synthesis of aluminum nitride single crystal

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124097A (en) * 1990-09-14 1992-04-24 Fujitsu Ltd Crystal growth process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1551403A (en) * 1975-06-13 1979-08-30 Philips Electronic Associated Method of manufacturing single crystals of gallium nitride
GB2127709A (en) * 1982-10-06 1984-04-18 Univ Edinburgh Manufacture of aluminium nitride
JPH01145309A (en) * 1987-11-30 1989-06-07 Idemitsu Petrochem Co Ltd Production of metallic nitride and device therefor
JPH04154607A (en) * 1990-10-17 1992-05-27 Showa Alum Corp Method for producing aluminum nitride powder
JPH07277897A (en) * 1994-04-04 1995-10-24 Katsutoshi Yoneya Synthesis of aluminum nitride single crystal

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
WPI abstract 89-209371 & JP 01 145 309 A *
WPI abstract 92-230418 & JP 04 154 607 A *
WPI abstract 95-400839 & JP 07 277 897 A *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750355B2 (en) 2001-10-26 2010-07-06 Ammono Sp. Z O.O. Light emitting element structure using nitride bulk single crystal layer
US7935550B2 (en) 2001-10-26 2011-05-03 Ammono Sp. Z O.O. Method of forming light-emitting device using nitride bulk single crystal layer
US7871843B2 (en) 2002-05-17 2011-01-18 Ammono. Sp. z o.o. Method of preparing light emitting device

Also Published As

Publication number Publication date
DE19826003A1 (en) 1998-12-24
GB9812061D0 (en) 1998-08-05
GB9812653D0 (en) 1998-08-12
KR100384728B1 (en) 2003-05-23
KR100322374B1 (en) 2002-05-09
KR100419285B1 (en) 2004-02-19
GB2326160A (en) 1998-12-16
TW519551B (en) 2003-02-01
KR19990006823A (en) 1999-01-25
KR100338360B1 (en) 2002-05-30

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Legal Events

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050611