GB2309337B - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB2309337B
GB2309337B GB9703514A GB9703514A GB2309337B GB 2309337 B GB2309337 B GB 2309337B GB 9703514 A GB9703514 A GB 9703514A GB 9703514 A GB9703514 A GB 9703514A GB 2309337 B GB2309337 B GB 2309337B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9703514A
Other versions
GB2309337A (en
GB9703514D0 (en
Inventor
Sangin Lee
Soonoh Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB9403816A external-priority patent/GB2275822B/en
Publication of GB9703514D0 publication Critical patent/GB9703514D0/en
Publication of GB2309337A publication Critical patent/GB2309337A/en
Application granted granted Critical
Publication of GB2309337B publication Critical patent/GB2309337B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB9703514A 1993-03-02 1994-02-28 Semiconductor devices Expired - Fee Related GB2309337B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR930002962 1993-03-02
GB9403816A GB2275822B (en) 1993-03-02 1994-02-28 Semiconductor devices

Publications (3)

Publication Number Publication Date
GB9703514D0 GB9703514D0 (en) 1997-04-09
GB2309337A GB2309337A (en) 1997-07-23
GB2309337B true GB2309337B (en) 1997-10-08

Family

ID=26304400

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9703577A Withdrawn GB2307345A (en) 1993-03-02 1994-02-28 Semiconductor device contact structure
GB9703514A Expired - Fee Related GB2309337B (en) 1993-03-02 1994-02-28 Semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9703577A Withdrawn GB2307345A (en) 1993-03-02 1994-02-28 Semiconductor device contact structure

Country Status (1)

Country Link
GB (2) GB2307345A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU186972U1 (en) * 2018-04-09 2019-02-12 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Device for controlling the resistivity of ohmic contacts to semiconductor layers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126805A (en) * 1989-11-24 1992-06-30 Gte Laboratories Incorporated Junction field effect transistor with SiGe contact regions
US5169803A (en) * 1990-11-28 1992-12-08 Nec Corporation Method of filling contact holes of a semiconductor device
EP0552968A2 (en) * 1992-01-23 1993-07-28 Samsung Electronics Co. Ltd. Semiconductor device including a wiring layer
EP0568050A2 (en) * 1992-04-28 1993-11-03 Nec Corporation Ohmic contact on a compound semiconductor layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126805A (en) * 1989-11-24 1992-06-30 Gte Laboratories Incorporated Junction field effect transistor with SiGe contact regions
US5169803A (en) * 1990-11-28 1992-12-08 Nec Corporation Method of filling contact holes of a semiconductor device
EP0552968A2 (en) * 1992-01-23 1993-07-28 Samsung Electronics Co. Ltd. Semiconductor device including a wiring layer
EP0568050A2 (en) * 1992-04-28 1993-11-03 Nec Corporation Ohmic contact on a compound semiconductor layer

Also Published As

Publication number Publication date
GB9703577D0 (en) 1997-04-09
GB2309337A (en) 1997-07-23
GB2307345A (en) 1997-05-21
GB9703514D0 (en) 1997-04-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090228