GB2284929B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2284929B
GB2284929B GB9405740A GB9405740A GB2284929B GB 2284929 B GB2284929 B GB 2284929B GB 9405740 A GB9405740 A GB 9405740A GB 9405740 A GB9405740 A GB 9405740A GB 2284929 B GB2284929 B GB 2284929B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9405740A
Other versions
GB2284929A (en
GB9405740D0 (en
Inventor
Nalin Kumar Patel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Publication of GB9405740D0 publication Critical patent/GB9405740D0/en
Publication of GB2284929A publication Critical patent/GB2284929A/en
Application granted granted Critical
Publication of GB2284929B publication Critical patent/GB2284929B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7727—Velocity modulation transistors, i.e. VMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9405740A 1993-12-14 1994-03-23 Semiconductor device Expired - Fee Related GB2284929B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB939325526A GB9325526D0 (en) 1993-12-14 1993-12-14 Semiconductor drive

Publications (3)

Publication Number Publication Date
GB9405740D0 GB9405740D0 (en) 1994-05-11
GB2284929A GB2284929A (en) 1995-06-21
GB2284929B true GB2284929B (en) 1997-12-17

Family

ID=10746549

Family Applications (2)

Application Number Title Priority Date Filing Date
GB939325526A Pending GB9325526D0 (en) 1993-12-14 1993-12-14 Semiconductor drive
GB9405740A Expired - Fee Related GB2284929B (en) 1993-12-14 1994-03-23 Semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB939325526A Pending GB9325526D0 (en) 1993-12-14 1993-12-14 Semiconductor drive

Country Status (1)

Country Link
GB (2) GB9325526D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2303963B (en) * 1995-07-31 1997-08-06 Toshiba Cambridge Res Center Semiconductor device
US8541773B2 (en) * 2011-05-02 2013-09-24 Intel Corporation Vertical tunneling negative differential resistance devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214047A2 (en) * 1985-08-20 1987-03-11 Fujitsu Limited Field effect transistor
EP0262610A2 (en) * 1986-09-29 1988-04-06 Siemens Aktiengesellschaft Two-dimensional electron gas switching device
US4806998A (en) * 1986-06-30 1989-02-21 Thomson-Csf Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214047A2 (en) * 1985-08-20 1987-03-11 Fujitsu Limited Field effect transistor
US4806998A (en) * 1986-06-30 1989-02-21 Thomson-Csf Heterojunction and dual channel semiconductor field effect transistor or negative transconductive device
EP0262610A2 (en) * 1986-09-29 1988-04-06 Siemens Aktiengesellschaft Two-dimensional electron gas switching device

Also Published As

Publication number Publication date
GB9325526D0 (en) 1994-02-16
GB2284929A (en) 1995-06-21
GB9405740D0 (en) 1994-05-11

Similar Documents

Publication Publication Date Title
TW371512U (en) Semiconductor device
GB2269935B (en) Semiconductor device
EP0564204A3 (en) Semiconductor device
EP0594441A3 (en) Semiconductor device
GB2292010B (en) Semiconductor device
GB2295488B (en) Semiconductor device
EP0704897A3 (en) Semiconductor device
SG43018A1 (en) Semiconductor device
GB2275822B (en) Semiconductor devices
GB2285175B (en) Semiconductor device
KR960012648B1 (en) Resin-seal type semiconductor device
KR970006537B1 (en) Semiconductor device
GB2274203B (en) Semiconductor device
GB2267996B (en) Semiconductor device
EP0730347A3 (en) Semiconductor device
EP0720295A3 (en) Semiconductor device
GB9423423D0 (en) Semiconductor device
GB2292637B (en) Semiconductor device
SG49206A1 (en) Semiconductor device
GB2295272B (en) Semiconductor device
KR970003890B1 (en) Semiconductor device
KR970006538B1 (en) Semiconductor device
GB2296373B (en) Semiconductor device
EP0716445A3 (en) Semiconductor device
GB2295051B (en) Semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120323