GB2308908B - Memory cell array - Google Patents

Memory cell array

Info

Publication number
GB2308908B
GB2308908B GB9626916A GB9626916A GB2308908B GB 2308908 B GB2308908 B GB 2308908B GB 9626916 A GB9626916 A GB 9626916A GB 9626916 A GB9626916 A GB 9626916A GB 2308908 B GB2308908 B GB 2308908B
Authority
GB
United Kingdom
Prior art keywords
memory cell
cell array
array
memory
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9626916A
Other languages
English (en)
Other versions
GB9626916D0 (en
GB2308908A (en
Inventor
Soon Won Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9626916D0 publication Critical patent/GB9626916D0/en
Publication of GB2308908A publication Critical patent/GB2308908A/en
Application granted granted Critical
Publication of GB2308908B publication Critical patent/GB2308908B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
GB9626916A 1995-12-29 1996-12-24 Memory cell array Expired - Fee Related GB2308908B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065617A KR970051170A (ko) 1995-12-29 1995-12-29 메모리 셀 어레이 및 그를 이용한 프로그램 방법

Publications (3)

Publication Number Publication Date
GB9626916D0 GB9626916D0 (en) 1997-02-12
GB2308908A GB2308908A (en) 1997-07-09
GB2308908B true GB2308908B (en) 2000-07-05

Family

ID=19447098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9626916A Expired - Fee Related GB2308908B (en) 1995-12-29 1996-12-24 Memory cell array

Country Status (4)

Country Link
JP (1) JP2966363B2 (ko)
KR (1) KR970051170A (ko)
DE (1) DE19654561B4 (ko)
GB (1) GB2308908B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100241523B1 (ko) * 1996-12-28 2000-02-01 김영환 플래쉬 메모리 소자 및 이를 이용한 프로그램, 소거 및 독출방법
KR100643481B1 (ko) * 1998-12-08 2007-12-04 삼성전자주식회사 비휘발성 반도체 메모리장치_
JP2003157682A (ja) 2001-11-26 2003-05-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
KR100704039B1 (ko) * 2006-01-20 2007-04-04 삼성전자주식회사 디코딩 신호가 워드라인 방향으로 버싱되는 반도체 메모리장치
US9997253B1 (en) * 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US4387447A (en) * 1980-02-04 1983-06-07 Texas Instruments Incorporated Column and ground select sequence in electrically programmable memory
GB2166592A (en) * 1984-11-02 1986-05-08 Nippon Telegraph & Telephone Semiconductor memory array
US4651183A (en) * 1984-06-28 1987-03-17 International Business Machines Corporation High density one device memory cell arrays
GB2226697A (en) * 1988-12-27 1990-07-04 Samsung Electronics Co Ltd Electrically erasable programmable semiconductor memory device
EP0562737A2 (en) * 1992-03-26 1993-09-29 Hitachi, Ltd. Flash memory and data processor
WO1994018703A1 (en) * 1993-02-01 1994-08-18 National Semiconductor Corporation Ultra-high-density alternate metal virtual ground rom

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3032240B2 (ja) * 1990-05-22 2000-04-10 富士通株式会社 半導体記憶装置
JPH0567759A (ja) * 1991-07-05 1993-03-19 Sony Corp 浮遊ゲート型不揮発性半導体記憶装置及びその製造方法
JPH05342892A (ja) * 1992-06-09 1993-12-24 Fujitsu Ltd 不揮発性半導体記憶装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US4387447A (en) * 1980-02-04 1983-06-07 Texas Instruments Incorporated Column and ground select sequence in electrically programmable memory
US4651183A (en) * 1984-06-28 1987-03-17 International Business Machines Corporation High density one device memory cell arrays
GB2166592A (en) * 1984-11-02 1986-05-08 Nippon Telegraph & Telephone Semiconductor memory array
GB2226697A (en) * 1988-12-27 1990-07-04 Samsung Electronics Co Ltd Electrically erasable programmable semiconductor memory device
EP0562737A2 (en) * 1992-03-26 1993-09-29 Hitachi, Ltd. Flash memory and data processor
WO1994018703A1 (en) * 1993-02-01 1994-08-18 National Semiconductor Corporation Ultra-high-density alternate metal virtual ground rom

Also Published As

Publication number Publication date
DE19654561B4 (de) 2005-06-09
GB9626916D0 (en) 1997-02-12
DE19654561A1 (de) 1997-07-03
GB2308908A (en) 1997-07-09
JPH09191094A (ja) 1997-07-22
JP2966363B2 (ja) 1999-10-25
KR970051170A (ko) 1997-07-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20091224