GB2298736A - Method for forming plt and plzt thin films - Google Patents

Method for forming plt and plzt thin films Download PDF

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Publication number
GB2298736A
GB2298736A GB9526698A GB9526698A GB2298736A GB 2298736 A GB2298736 A GB 2298736A GB 9526698 A GB9526698 A GB 9526698A GB 9526698 A GB9526698 A GB 9526698A GB 2298736 A GB2298736 A GB 2298736A
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thin film
gas
reaction chamber
temperature
forming
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GB9526698D0 (en
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Seaung Suk Lee
Ho Gi Kim
Jong Choul Kim
Soo Han Choi
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SK Hynix Inc
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Hyundai Electronics Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

2298736 METHOD FOR FORMING PLT THIN FILM The present invention relates to
a method for forming a thin film for a semiconductor device.
For example, the Invention relates to a method for forming a (Pb,La) Tio, (PLT) thin film, and more particularly to a method for forming PLT thin films having an A-axis orientation, namely, an orientation index of (100) exhibiting improved characteristics by use of a hotwall type low pressure chemical vapour deposition (LPCVD) process. Using such PLT films, highly integrated semiconductor devices can be fabricated.
Generally, PLT thin films have been formed using a method wherein a single-crystalline substrate made of, for example, MgO or sappier is used. With this method, a PLT thin film exhibiting an orientation index of (001) is deposited over the single-crystalline substrate using a sputtering method or sol-gel method. Such a method is disclosed in Japanese Patent Publication Nos. J04199745 A (Matsushita Elec.) and J05009738 A, and International Patent Publication No. W09318202 Al (Shap K K, Ceramic Inc., Univ. Virginia Polytech).
However, PLT thin films deposited in accordance with the sol-gel method have a high probability that cracks may be formed in process of the crystallization. Furthermore, such films exhibit inferior electrical characteristics and a degraded productivity. On the other hand, PLT thin films deposited by a sputtering method involve a degradation in physical characteristics such as step coverage even though they exhibit improved electrical characteristics.
Moreover, the single-crystalline substrate material such as MgO or sappier is expensive. This substrate -2 material also has a degraded usefulness because when it is applied to semiconductor devices, its single crystal formation in the device is difficult.
Consequently, it is difficult to achieve high integration in and to improve the electrical and physical characteristics of semiconductor devices using such PLT thin films.
It is an object of the invention to reduce the problems involved in the prior art.
According to a first aspect of the present invention there is provided a method for forming a thin film for a semiconductor device comprising the steps of:
forming a (111)-orientated metal thin film over a wafer; and forming a (100)-oriented thin film over the (111) oriented metal thin film.
An embodiment of the invention forms a PLT thin film over a (111)oriented metal thin film such that it has an orientation index of (100), thereby exhibiting superior electrical and physical characteristics.
In accordance with a further aspect of the present invention there is provided a method for forming a PLT thin film for a semiconductor device in a hot-wall fashion, comprising the steps of: loading a wafer formed with a silicon oxide film and a (111)-oriented metal thin film in a reaction chamber; setting the reaction chamber at a deposition enabling temperature while maintaining the reaction chamber in a high vacuum state; introducing a carrier gas, which carries a source material, in a required amount in the reaction chamber; and depositing a (100)oriented PLT thin_film while introducing a diluting gas and an oxidizing gas respectively in required amounts in the reaction chamber.
Embodiments of the present invention will hereinafter be described, by way of example, with reference to the accompanying drawings, in which:- Figure 1 shows a thin film, depositing apparatus for forming a PLT thin film in accordance with the present 10 invention; Figure 2 is a graph illustrating the reproducibility in the deposition of PLT thin films in accordance with the present invention; and Figures 3 and 4 are graphs illustrating patterns obtained for PLT thin films formed in accordance with the present invention, but having different thicknesses.
A PLT thin film having an orientation index of (100) is formed over a Pt thin film having an orientation index of (111). The (111)-oriented Pt thin film is formed using the following processing steps.
Using a DC sputtering apparatus as shown in Figure 1, a silicon oxide film is first formed to a thickness of 900 to 1,100 A over a silicon substrate. A surface cleaning treatment is carried out for the resulting structure. This surface rinsing involves a rinsing carried out for one minute in a hydrogen peroxide, a rinsing carried out for 10 seconds in a hydrofluorine (HF) solution mixed with water in a ration of 100: 1, and a rinsing carried out for 3 minutes in de-ionized water.
Thereafter, an oriented Pt thin film exhibiting an orientation index of (111) is deposited to 500 to 4,000 A over the silicon oxide film using the sputtering method. The deposition of the oriented Pt thin film is carried out in a reaction chamber 11 using the following conditions:
Internal Pressure of Reaction Chamber: 5 X 10-6 Torrs; Working Pressure: 8 to 12 mTorrs, preferably 10 mTorrs; Consumed Electric Power: 23 to 27 Watts, preferably 25 Watts; Temperature of Substrate: 380 to 4200C, preferably 400OC; and Deposition Time: 10 minutes.
The resulting structure, namely, a wafer 13 deposited with the pt thin film is then rinsed. This rinsing treatment involves a rinsing carried out for one minute in a solution consisting of alcohol and acetone mixed together in a ratio of 1: 1, a rinsing carried out for 15 seconds in an HF solution mixed with pure water in a ratio of 100: 1, and a rinsing carried out for one minute in a de-ionized water.
In order to form a (100)-oriented PLT thin film over the (111)-oriented Pt thin film, a source material is used, which comprises Pb(d2, La(d3, TTIP (Titanium- tetraisopropoxide) and 0,. Here, "dpm" is dipivaloy- methane. Each component of the source material is charged into a source evaporator 23 which is, in turn, heated. The source material may also be a material, such as Pb (CN_.)4, exhibiting a high vapour pressure in order to achieve the deposition of the source material in a single pass. The charging of the source material is carried out under the condition that each source evaporator 23 is maintained at the normal temperature. When each source evaporator 23 reaches a pressure of 100 mTorrs after the source material is pumped for 3 minutes, its temperature is increased by 100C per minute and then set. For Pb(dpm)2, its source evaporator 23 is maintained at a temperature -5 ranging from 1300C to 1800C. For La(dpm)3, its source evaporator 23 is maintained at a temperature ranging from 1500C to 2500C, In the case of TTIP, its source evaporator 23 is maintained at a temperature ranging from 200C to '900C.
The reaction chamber 11 is then heated along with a gas line connected thereto. The heating is carried out so that the reaction chamber 11 and gas line can be maintained at a temperature higher than the maximum temperature of each source evaporator 23 by 200C.
Thereafter, a rotary pump 19 is driven, which is connected to the reaction chamber 11 through a gate valve 17. The rotary pump 19 is a machine adapted to maintain the reaction chamber 11 in a vacuum state.
Once the rotary pump 19 drives, the gate valve 17 is opened to introduce argon or nitrogen gas in the reaction chamber 11 via the gas line. In such a manner, the reaction chamber 11 and its gas line are purged for 30 to 60 minutes.
After completing the purging operation, the reaction chamber 11 is back-filled such that its internal pressure increases to the normal pressure. Here, the "back-fill" means a procedure for filling the reaction chamber 11, which is in a vacuum or low pressure state, with inert gas, thereby increasing the internal pressure of the reaction chamber 11 to the atmospheric pressure. The wafer 13 is positioned in a uniform temperature zone in the reaction chamber 11 while being inclined at an angle of 90 to 00 in order to obtain a uniformity in the thickness and composition of a finally deposited thin film.
A half gate valve 120 connected to the reaction chamber 11 is opened so as to maintain the reaction chamber 11 at 500 mTorrs. Once the reaction chamber 11 is maintained at 500 mTorrs, the half gate valve 120 is closed. The gate valve 17 is then opened so that the reaction chamber 11 can be maintained in a vacuum state of lower than 50 mTorrs. The temperature of the reaction chamber 11 is then set while injecting argon gas into the reaction chamber. In place of the argon gas, nitrogen gas may be used. The injection of the argon gas is carried out using a gas injector 12. This argon gas makes it possible to form a thin film having a uniform thickness and uniform composition. The reaction chamber 11 is also maintained at a temperature range of 400 to 7000C enabling the deposition of a thin film over the wafer 13. However, the temperature around the gas injector 12 within the reaction chamber 11 is controlled independently of the reaction chamber. That is, this temperature is maintained in a range from 2000C to 3000C so as to suppress an oxidizing reaction following a decomposition of the source material. The temperature control for the gas injector 12 is achieved using a separate heating device.
In this state, the supply of argon gas is cut off. A carrier gas from a carrier gas supply source (not shown) is then supplied to each source evaporator 23 in a desired amount by opening a valve connected between the source evaporator and the carrier gas supply source. This carrier gas is injected using the gas injector 12 similar to the way in which the argon gas is injected. As the carrier gas, argon or nitrogen gas may be used. The amount of carrier gas ranges from 1 sccm to 300 sccm.
The carrier gas then emerges from each source evaporator 23 while carrying source vapour resulting from the decomposition of the source material. The carrier gas is then introduced in the reaction chamber 11 after passing through a gas mixing chamber 14. This gas mixing chamber 14 serves to uniformly mix together source vapour flows respectively discharged from the source evaporators 23.
Thereafter, the deposition of the thin film is begun in the reaction chamber 11 while Injecting a diluting gas and an oxidizing gas into the reaction chamber using the gas injector 12. In this case, argon or nitrogen gas is used as the diluting gas whereas oxygen or ozone gas is used as the oxidizing gas. The diluting gas and oxidizing gas are used in an amount of 0 to 10 slpm. During the deposition of the thin film, the reaction chamber 11 is maintained at a working pressure ranging from 100 mTorrs to 760 Torrs. This working pressure is controlled using a threshold valve.
After a desired time elapses, all valves are closed to cut off the introduction of any gas in the reaction chamber 11. Subsequently, the reaction chamber 11 is back-filled, and the wafer 13 is then taken out of the reaction chamber 11. Thus, the overall procedure is completed.
By the above procedure, a PLT thin film having a uniformity in thickness and composition is formed. The PLT thin film has a thickness of 1,000 to 1,800 A.
Figure 2 is a graph illustrating results obtained after repeatedly evaluating, five times, PLT thin films formed using the depositing device of Figure 1 in different processing conditions. This graph shows the reproducibility in the deposition of the (100)-oriented PLT thin film. For forming these PLT thin films, Pb(dpm)3, La(dpmb, and Ti [OCH(CHP)214 were used as source materials and maintained at 1550C, 1950C and 450C, respectively. For these different source materials, the carrier gas was used in amounts of 26 sccm, 50 sccm and 100 sccm, respectively.
-B- The oxidizing gas and diluting argon gas were used in amounts of 400 sccm and 300 sccm, respectively. Each deposition was carried out for 60 minutes at a temperature of 5000 and a pressure of 1,000 mTorrs.
After being deposited at 5000C and 1,000 mTorrs, each PLT thin film was heat-treated in an oxygen atmosphere for minutes. This heat treatment was carried out by loading each sample in a treating chamber at the normal temperature and then increasing the internal temperature of the chamber. Once the temperature of the chamber reached 3000C, it was increased by 100C per minute until it reached 6500C. While increasing the temperature of the chamber, oxygen gas was supplied at a rate of 1 slpm. After completing the heat treatment, each sample was cooled by 100C per minute.
Referring to Figure 2, it can be found that PLT thin films 5 respectively deposited in the above-mentioned different processing conditions have similar thicknesses when the same composition and deposition time are given.
Figure 3 illustrates the X-ray diffraction (XRD) pattern of a PLT thin film deposited to a thickness of 1,000 A at 5000C and then heat-treated in an oxygen atmosphere at 6500C for 10 minutes. The XRD is generated when the following equation is satisfied:
nX = 2dsinO where, n: Diffraction Constant; X: Wavelength of X-ray; d: Distance; and 0: Bragg Diffraction Angle.
In this case, the PLT thin film has a PLT composition consisting of 46% Pb, 3% La and 51% Ti.
Figure 4 illustrates the X-ray diffraction (XRD) pattern of another PLT thin film deposited to a thickness of 1,800 A at 5000C and then heattreated in an oxygen atmosphere at 6500C for 10 minutes. In this case, the PLT thin film has a PLT composition consisting of 41% Pb, 6% La and 53% Ti.
Referring to Figures 3 and 4, it can be found that (100)-oriented PLT thin films form a regular XRD pattern 10 irrespective of their thickness.
In accordance with another embodiment, a (100) -oriented PbT'03, thin film, which is free of La(dpm)3r may be formed. In accordance with another embodiment, a (100)-oriented (Pb,La) (Zr,Ti)03 thin film, namely, a PUT thin film may be formed by using Zr(dpm)4 or Zr(OC4H9)4 as a source material. In either case, the thin film may be formed in the same manner as in the afore-mentioned embodiment of the present invention.
As apparent from the above description, in accordance with the present invention, (100)-oriented PLT thin films exhibiting superior electrical and physical characteristics are formed using the hot-wall type LPCVD method. By virtue of such (100)-oriented PLT thin films, it is possible to fabricate highly integrated semiconductor devices having improved characteristics.
The PLT thin films formed in accordance with the invention may be used as charge storage dielectric thin films for DRAMs, charge storage dielectric thin films for non-volatile (ferroelectric) RAMs, thin films for infrared ray sensors, thin films for photo memories, thin films for photo switches, thin films for photo modulators and thin films for display units. Where such PLT thin films are applied to DRAMs, it is possible to achieve an increase in the effective charge storage density. Ferroelectric RAMs using the PLT thin films of the invention can operate at a low voltage level. In this case, the devices can have an improved reliance because their fatigue characteristic is improved. Where infrared ray sensors use the PLT thin films of the invention, they can have an improved superconductivity. Accordingly, these infrared ray sensors exhibit an improvement in sensitivity.
Although preferred embodiments of the invention have been disclosed for illustrative purposes, it will be appreciated that various modifications, additions and substitutions are possible without departing from the scope 15 of the invention as defined in the accompanying claims.

Claims (21)

1. A method for forming a thin film for a semiconductor device comprising the steps of:forming a (111)-oriented metal thin film over a wafer; and forming a (100)-oriented thin film over the (111)-oriented metal thin film.
2. A method as claimed in Claim 1, wherein the step of forming the (111)oriented metal thin film comprises the steps of: forming a silicon oxide film over a silicon substrate to have a uniform thickness; and forming the (111)-oriented metal thin film over the silicon oxide film.
3. A method as claimed in Claim 2, wherein the silicon 20 oxide film has a thickness of 900 to 1,100 A.
4. A method as claimed in any preceding claim, wherein the (111)-oriented metal thin film is comprised of a Pt thin film having a thickness of 500 to 4,000 A.
5. A method as claimed in any preceding claim, wherein the step of forming the (111)-oriented metal thin film comprises the step of depositing a (111) -oriented metal over a silicon oxide film on a silicon substrate using a sputtering method under deposition conditions involving an internal pressure of a reaction chamber of about 5 x 10-6 Torrs, a working pressure in the range of 8 mTorrs to 12 mTorrs, a consumed electric power in the range of 23 watts to 27 watts, the temperature of the silicon substrate in the range of 3800C to 4200C, and a deposition time of about 10 minutes.
6. A method as claimed in any preceding claim, wherein the step of forming the (100)-oriented thin film comprises the steps of:
loading the wafer formed with the (111) -oriented metal thin film in a reaction chamber; temperature-setting the reaction chamber while maintaining the reaction chamber in a high vacuum state; introducing a carrier gas, which carries a source material, in a required amount in the reaction chamber using a gas injector; and depositing a (100)-oriented PLT thin film while introducing a diluting gas and an oxidizing gas respectively in required amounts in the reaction chamber.
7. A method as claimed in Claim 6, wherein the source material comprises a material exhibiting a high vapour pressure.
8. A method as claimed in Claim 7, wherein the high vapour 20 pressure material comprises Pb(C,Ns)4.
9. A method as claimed in any of Claims 6 to 8, wherein the source material comprises Pb(dpm).2, La(dpmb, titanium-tetraisopropoxide and 0, gas.
10. A method as claimed in any of Claims 6 to 8, wherein the source material comprises Pb(dpm),, La(dpm)3, Zr(d4. titanium- tetrai sopropoxide, Zr(OC4H9)4 and 0., gas.
11. A method as claimed in Claim 9 or Claim 10, wherein the source material is maintained at a temperature in the range 1300C to 1800C for pb(dpm),, at a temperature in the range 1500C to 2500C for La(dpm)3, and at a temperature in the range 200C to 900C for titanium-tetraisopropoxide.
12. A method as claimed in any of Claims 6 to 11, wherein the reaction chamber and a gas line connecting the reaction chamber to a source evaporator contained with each component of the source material are maintained at a temperature higher than the maximum temperature of the source evaporator by about 200C.
13. A method as claimed in any of Claims 6 to 12, wherein the wafer is positioned in a uniform temperature zone in the reaction chamber while being inclined at an angle of 90 to 00 in order to obtain a uniformity in the thickness and composition of the deposited thin film.
14. A method as claimed in any of Claims 6 to 13, wherein the vacuum of the reaction chamber is less than 50 mTorrs, and the reaction chamber is set at a temperature in the range 4000C to 7000C.
15. A method as claimed in any of Claims 6 to 14, wherein the carrier gas is argon gas or nitrogen gas, and the required amount of the carrier gas is in the range 1 sccm to 300 sccm.
16. A method as claimed in any of Claims 6 to 15, wherein the gas injector is maintained at a temperature in the range 2000C to 3000C to suppress an oxidizing reaction of the source material.
17. A method as claimed in any of Claims 6 to 16, wherein the diluting gas is argon gas or nitrogen gas, and the required amount of the diluting gas is in the range 0 slpm to 10 S1pm.
18. A method as claimed in any of Claims 6 to 17, wherein the oxidizing gas is oxygen gas or ozone gas, and the required amount of the oxidizing gas is in the range 0 slpm to 10 S1pm.
19. A method as claimed in any of Claims 1 to 18, wherein the thin film has a thickness of 1,000 to 1,800 A.
20. A method for forming a thin film for a semiconductor device substantially as hereinbefore described with reference to the accompanying drawings.
21. A semiconductor device having a thin film formed by a method as claimed in any of Claims 1 to 20.
GB9526698A 1995-03-06 1995-12-29 Method for forming plt and plzt thin films Withdrawn GB2298736A (en)

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KR1019950004501A KR0179101B1 (en) 1995-03-06 1995-03-06 Fabricating method of plt thin film

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KR (1) KR0179101B1 (en)
CN (1) CN1060224C (en)
DE (1) DE19549129C2 (en)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2290087B (en) * 1994-06-08 1998-01-07 Hyundai Electronics Ind Method for forming a Ferroelectric Film
US6348417B1 (en) 1998-04-03 2002-02-19 Nec Corporation Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19733053A1 (en) * 1997-07-31 1999-02-04 Leybold Ag Oxide and metal coated transparent substrate useful for monitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910005405Y1 (en) * 1988-08-13 1991-07-25 다나신 덴기 가부시끼가이샤 Loading apparatus of disk-typed recording carrier
JP2718414B2 (en) * 1989-03-30 1998-02-25 マツダ株式会社 Method for producing lead titanate thin film
JPH04199745A (en) * 1990-11-29 1992-07-20 Matsushita Electric Ind Co Ltd Memory element
JPH059738A (en) * 1991-06-27 1993-01-19 Mitsubishi Electric Corp Production of ferroelectric ceramic thin film
US5431958A (en) * 1992-03-09 1995-07-11 Sharp Kabushiki Kaisha Metalorganic chemical vapor deposition of ferroelectric thin films

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
INSPEC Abstract No A9404-8115C-003 & Jap Journ Appl Phys Pt1vol32 no9B 1993 pp4057-60 Kanno et al *
INSPEC Abstract No A9415-8115l-006 & Proc. of the 1992 IEEE Inter sympo on applics of Ferroelectrs *
INSPEC Abstract No A9522-7755-002 & Integrated Ferroelectncsvol 7, No 1-4, pp161-171,1995,Beach etal *
INSPEC Abstract NoA9408-8115L-009 & Ferrolectric Thin films III sympos p269-74 pub1993 Mat Res Soc *
INSPEC Abstract NoA9602-8115H-020 & Electroceramics IV Part vol1 pp347-50 vol1 1994 Lee etal *
pub 1992 "DAAS Tech for synth sizing doped PZT & PLZT thin films" Liu et al *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2290087B (en) * 1994-06-08 1998-01-07 Hyundai Electronics Ind Method for forming a Ferroelectric Film
US6348417B1 (en) 1998-04-03 2002-02-19 Nec Corporation Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
US6391116B2 (en) 1998-04-03 2002-05-21 Nec Corporation Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

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TW359045B (en) 1999-05-21
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