GB2252871A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
GB2252871A
GB2252871A GB9103309A GB9103309A GB2252871A GB 2252871 A GB2252871 A GB 2252871A GB 9103309 A GB9103309 A GB 9103309A GB 9103309 A GB9103309 A GB 9103309A GB 2252871 A GB2252871 A GB 2252871A
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GB
United Kingdom
Prior art keywords
gallium arsenide
junction
manufactured out
light
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9103309A
Other versions
GB9103309D0 (en
GB2252871B (en
Inventor
Robin Mukerjee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB9103309A priority Critical patent/GB2252871B/en
Publication of GB9103309D0 publication Critical patent/GB9103309D0/en
Publication of GB2252871A publication Critical patent/GB2252871A/en
Application granted granted Critical
Publication of GB2252871B publication Critical patent/GB2252871B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A wide surface LED utilises the full area of a major component surface, instead of emitting visible light from a small area of a pn junction. The top surface of the wide surface LED is made out of a mixture of Gallium arsenide and silica and cadmium phosphor, the result being that the full area of the PN junction produces light in far greater quantities than conventional LEDS. The P type substrate is made out of gallium arsenide. <IMAGE>

Description

Description The wide surface LED is produced by integrating a P type surface on a P type substrate followed by a N surface whitch is made out of gallium arsenide, silica and cadmium phosphor, the result is a greater quantity of light produced , as the surface area is considerably larger for the emited light, the P tyje substrate is made out of gallium. arsenide.

Claims (1)

  1. Claims
    The wide surface LED claims the distinct technical feature of being able to emit a powerful beam of light from a PS junction through the P type doped region, this hence can produce a far larger beam of light than emitting the light fronithe side of the PN junction which is how a conventional SIZED operates; the materialS which the top P type region is manufactured out of is gallium arsenide, cadmium phosfor and silica Amendments to the claims have been filed as follows The wide surface LED claims the .distinct technical advantage of being manufactured out of cadmium phosfor, gallium arsenide and silica , these are the materials whitch the base PN junction are manufactured out of, The other technical feature is that the substrate is manufactured out of gallium arsenide and as shown in the diagram the substrate is similar to the same sort of substrate as in a integrated circuit except that its manufactured out of gallium arsenide.
GB9103309A 1991-02-16 1991-02-16 Wide surface LED Expired - Fee Related GB2252871B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9103309A GB2252871B (en) 1991-02-16 1991-02-16 Wide surface LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9103309A GB2252871B (en) 1991-02-16 1991-02-16 Wide surface LED

Publications (3)

Publication Number Publication Date
GB9103309D0 GB9103309D0 (en) 1991-04-03
GB2252871A true GB2252871A (en) 1992-08-19
GB2252871B GB2252871B (en) 1994-11-02

Family

ID=10690134

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9103309A Expired - Fee Related GB2252871B (en) 1991-02-16 1991-02-16 Wide surface LED

Country Status (1)

Country Link
GB (1) GB2252871B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1316475A (en) * 1969-11-12 1973-05-09 Gen Electric Light-emitting semiconductor device
US3864717A (en) * 1971-03-09 1975-02-04 Innotech Corp Photoresponsive junction device employing a glassy amorphous material as an active layer
US3922553A (en) * 1972-12-15 1975-11-25 Bell Telephone Labor Inc Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes
GB1426956A (en) * 1972-03-14 1976-03-03 Philips Electronic Associated Electroluminescent device
GB1448606A (en) * 1973-10-02 1976-09-08 Siemens Ag Semiconductor luminescence diodes
GB1540004A (en) * 1976-02-27 1979-02-07 Hitachi Ltd Semiconductor light-emitting device
EP0151718A2 (en) * 1983-12-08 1985-08-21 Asea Ab Semiconductor element for producing an optical radiation
EP0316613A2 (en) * 1987-11-18 1989-05-24 Hewlett-Packard Company A partially opaque substrate red led

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1316475A (en) * 1969-11-12 1973-05-09 Gen Electric Light-emitting semiconductor device
US3864717A (en) * 1971-03-09 1975-02-04 Innotech Corp Photoresponsive junction device employing a glassy amorphous material as an active layer
GB1426956A (en) * 1972-03-14 1976-03-03 Philips Electronic Associated Electroluminescent device
US3922553A (en) * 1972-12-15 1975-11-25 Bell Telephone Labor Inc Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes
GB1448606A (en) * 1973-10-02 1976-09-08 Siemens Ag Semiconductor luminescence diodes
GB1540004A (en) * 1976-02-27 1979-02-07 Hitachi Ltd Semiconductor light-emitting device
EP0151718A2 (en) * 1983-12-08 1985-08-21 Asea Ab Semiconductor element for producing an optical radiation
EP0316613A2 (en) * 1987-11-18 1989-05-24 Hewlett-Packard Company A partially opaque substrate red led

Also Published As

Publication number Publication date
GB9103309D0 (en) 1991-04-03
GB2252871B (en) 1994-11-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19960216