GB2252871A - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
- Publication number
- GB2252871A GB2252871A GB9103309A GB9103309A GB2252871A GB 2252871 A GB2252871 A GB 2252871A GB 9103309 A GB9103309 A GB 9103309A GB 9103309 A GB9103309 A GB 9103309A GB 2252871 A GB2252871 A GB 2252871A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gallium arsenide
- junction
- manufactured out
- light
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 claims 1
- NRDMFTSWEBBZFK-UHFFFAOYSA-N [P].[Cd] Chemical compound [P].[Cd] NRDMFTSWEBBZFK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A wide surface LED utilises the full area of a major component surface, instead of emitting visible light from a small area of a pn junction. The top surface of the wide surface LED is made out of a mixture of Gallium arsenide and silica and cadmium phosphor, the result being that the full area of the PN junction produces light in far greater quantities than conventional LEDS. The P type substrate is made out of gallium arsenide. <IMAGE>
Description
Description
The wide surface LED is produced by integrating a P type surface on a P type substrate followed by a N surface whitch is made out of gallium arsenide, silica and cadmium phosphor, the result is a greater quantity of light produced , as the surface area is considerably larger for the emited light, the P tyje substrate is made out of gallium. arsenide.
Claims (1)
- ClaimsThe wide surface LED claims the distinct technical feature of being able to emit a powerful beam of light from a PS junction through the P type doped region, this hence can produce a far larger beam of light than emitting the light fronithe side of the PN junction which is how a conventional SIZED operates; the materialS which the top P type region is manufactured out of is gallium arsenide, cadmium phosfor and silica Amendments to the claims have been filed as follows The wide surface LED claims the .distinct technical advantage of being manufactured out of cadmium phosfor, gallium arsenide and silica , these are the materials whitch the base PN junction are manufactured out of, The other technical feature is that the substrate is manufactured out of gallium arsenide and as shown in the diagram the substrate is similar to the same sort of substrate as in a integrated circuit except that its manufactured out of gallium arsenide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9103309A GB2252871B (en) | 1991-02-16 | 1991-02-16 | Wide surface LED |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9103309A GB2252871B (en) | 1991-02-16 | 1991-02-16 | Wide surface LED |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9103309D0 GB9103309D0 (en) | 1991-04-03 |
GB2252871A true GB2252871A (en) | 1992-08-19 |
GB2252871B GB2252871B (en) | 1994-11-02 |
Family
ID=10690134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9103309A Expired - Fee Related GB2252871B (en) | 1991-02-16 | 1991-02-16 | Wide surface LED |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2252871B (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1316475A (en) * | 1969-11-12 | 1973-05-09 | Gen Electric | Light-emitting semiconductor device |
US3864717A (en) * | 1971-03-09 | 1975-02-04 | Innotech Corp | Photoresponsive junction device employing a glassy amorphous material as an active layer |
US3922553A (en) * | 1972-12-15 | 1975-11-25 | Bell Telephone Labor Inc | Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes |
GB1426956A (en) * | 1972-03-14 | 1976-03-03 | Philips Electronic Associated | Electroluminescent device |
GB1448606A (en) * | 1973-10-02 | 1976-09-08 | Siemens Ag | Semiconductor luminescence diodes |
GB1540004A (en) * | 1976-02-27 | 1979-02-07 | Hitachi Ltd | Semiconductor light-emitting device |
EP0151718A2 (en) * | 1983-12-08 | 1985-08-21 | Asea Ab | Semiconductor element for producing an optical radiation |
EP0316613A2 (en) * | 1987-11-18 | 1989-05-24 | Hewlett-Packard Company | A partially opaque substrate red led |
-
1991
- 1991-02-16 GB GB9103309A patent/GB2252871B/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1316475A (en) * | 1969-11-12 | 1973-05-09 | Gen Electric | Light-emitting semiconductor device |
US3864717A (en) * | 1971-03-09 | 1975-02-04 | Innotech Corp | Photoresponsive junction device employing a glassy amorphous material as an active layer |
GB1426956A (en) * | 1972-03-14 | 1976-03-03 | Philips Electronic Associated | Electroluminescent device |
US3922553A (en) * | 1972-12-15 | 1975-11-25 | Bell Telephone Labor Inc | Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes |
GB1448606A (en) * | 1973-10-02 | 1976-09-08 | Siemens Ag | Semiconductor luminescence diodes |
GB1540004A (en) * | 1976-02-27 | 1979-02-07 | Hitachi Ltd | Semiconductor light-emitting device |
EP0151718A2 (en) * | 1983-12-08 | 1985-08-21 | Asea Ab | Semiconductor element for producing an optical radiation |
EP0316613A2 (en) * | 1987-11-18 | 1989-05-24 | Hewlett-Packard Company | A partially opaque substrate red led |
Also Published As
Publication number | Publication date |
---|---|
GB9103309D0 (en) | 1991-04-03 |
GB2252871B (en) | 1994-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19960216 |