AU2001250486A1 - Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device - Google Patents

Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device

Info

Publication number
AU2001250486A1
AU2001250486A1 AU2001250486A AU5048601A AU2001250486A1 AU 2001250486 A1 AU2001250486 A1 AU 2001250486A1 AU 2001250486 A AU2001250486 A AU 2001250486A AU 5048601 A AU5048601 A AU 5048601A AU 2001250486 A1 AU2001250486 A1 AU 2001250486A1
Authority
AU
Australia
Prior art keywords
layer
light
emitting diode
illumination device
gainn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001250486A
Inventor
Benjamin Gerard Pierre Damilano
Nicolas Pierre Grandjean
Jean Claude Massies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2001250486A1 publication Critical patent/AU2001250486A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. Method for preparing this layer. Light emitting diode (LED), particularly a LED emitting white light comprising such a thin layer in its active zone, and lighting device comprising such a diode.
AU2001250486A 2000-04-12 2001-04-11 Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device Abandoned AU2001250486A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0004683A FR2807909B1 (en) 2000-04-12 2000-04-12 GaInN SEMICONDUCTOR THIN LAYER, PROCESS FOR PREPARING SAME; LED COMPRISING THIS LAYER AND LIGHTING DEVICE COMPRISING SAID LED
FR0004683 2000-04-12
PCT/FR2001/001115 WO2001078157A1 (en) 2000-04-12 2001-04-11 Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device

Publications (1)

Publication Number Publication Date
AU2001250486A1 true AU2001250486A1 (en) 2001-10-23

Family

ID=8849163

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001250486A Abandoned AU2001250486A1 (en) 2000-04-12 2001-04-11 Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device

Country Status (10)

Country Link
US (1) US6730943B2 (en)
EP (1) EP1273049B1 (en)
JP (1) JP5296280B2 (en)
KR (1) KR100900933B1 (en)
CN (1) CN1422444A (en)
AT (1) ATE524836T1 (en)
AU (1) AU2001250486A1 (en)
CA (1) CA2405517C (en)
FR (1) FR2807909B1 (en)
WO (1) WO2001078157A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2810159B1 (en) * 2000-06-09 2005-04-08 Centre Nat Rech Scient THICK LAYER OF GALLIUM NITRIDE OR MIXED NITRIDE OF GALLIUM AND ANOTHER METAL, PROCESS FOR PREPARING THE SAME, AND ELECTRONIC OR OPTOELECTRONIC DEVICE COMPRISING SUCH A LAYER
DE20307958U1 (en) * 2003-05-21 2003-09-04 Arturo Salice S.P.A., Novedrate, Como Body element with flap
JP2004356522A (en) * 2003-05-30 2004-12-16 Sumitomo Chem Co Ltd Group 3-5 compound semiconductor, its manufacturing method, and its use
NL1023679C2 (en) * 2003-06-17 2004-12-20 Tno Light-emitting diode.
TWI247439B (en) * 2004-12-17 2006-01-11 Genesis Photonics Inc Light-emitting diode device
FR2888664B1 (en) * 2005-07-18 2008-05-02 Centre Nat Rech Scient METHOD FOR MAKING A BIPOLAR HETEROJUNCTION TRANSISTOR
KR100771811B1 (en) * 2005-12-27 2007-10-30 삼성전기주식회사 White light emitting device
FR2898434B1 (en) * 2006-03-13 2008-05-23 Centre Nat Rech Scient MONOLITHIC WHITE ELECTROLUMINESCENT DIODE
FR2912552B1 (en) * 2007-02-14 2009-05-22 Soitec Silicon On Insulator MULTILAYER STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
FR2932608B1 (en) * 2008-06-13 2011-04-22 Centre Nat Rech Scient METHOD FOR GROWING NITRIDE OF ELEMENTS OF GROUP III.
JP5136437B2 (en) * 2009-01-23 2013-02-06 住友電気工業株式会社 Method for fabricating nitride-based semiconductor optical device
US8912554B2 (en) 2011-06-08 2014-12-16 Micron Technology, Inc. Long wavelength light emitting device with photoluminescence emission and high quantum efficiency
DE102014107472A1 (en) 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Semiconductor device and lighting device
WO2017089857A1 (en) 2015-11-23 2017-06-01 Ecole Polytechnique Federale De Lausanne (Epfl) Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3247437B2 (en) * 1992-03-10 2002-01-15 旭化成株式会社 Nitride-based semiconductor device and method of manufacturing the same
JP3361285B2 (en) * 1996-01-19 2003-01-07 松下電器産業株式会社 Gallium nitride based compound semiconductor light emitting device and method of manufacturing gallium nitride based compound semiconductor
JP3314620B2 (en) * 1996-04-11 2002-08-12 日亜化学工業株式会社 Nitride semiconductor light emitting device
JP3543498B2 (en) * 1996-06-28 2004-07-14 豊田合成株式会社 Group III nitride semiconductor light emitting device
JP3675044B2 (en) * 1996-06-28 2005-07-27 豊田合成株式会社 Group 3 nitride semiconductor light emitting device
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3394678B2 (en) * 1997-02-14 2003-04-07 シャープ株式会社 Semiconductor light emitting device
JPH10270756A (en) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd Gallium nitride compound semiconductor device
JP3880683B2 (en) * 1997-04-23 2007-02-14 シャープ株式会社 Method for manufacturing gallium nitride based semiconductor light emitting device
JPH10335700A (en) * 1997-06-04 1998-12-18 Toshiba Corp Semiconductor light emitting device and manufacture thereof
JPH1187773A (en) * 1997-09-08 1999-03-30 Toshiba Corp Light emitting element
JPH11135838A (en) * 1997-10-20 1999-05-21 Ind Technol Res Inst White-color light-emitting diode and manufacture thereof
JPH11121806A (en) * 1997-10-21 1999-04-30 Sharp Corp Semiconductor light emitting device
JPH11233827A (en) * 1998-02-10 1999-08-27 Furukawa Electric Co Ltd:The Semiconductor light emitting device
JP3978858B2 (en) * 1998-04-03 2007-09-19 松下電器産業株式会社 Gallium nitride compound semiconductor light emitting device
JP3543628B2 (en) * 1998-08-13 2004-07-14 ソニー株式会社 Method for growing nitride III-V compound semiconductor and method for manufacturing semiconductor light emitting device
JP3511923B2 (en) * 1998-12-25 2004-03-29 日亜化学工業株式会社 Light emitting element
US6303404B1 (en) * 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation

Also Published As

Publication number Publication date
CA2405517A1 (en) 2001-10-18
US20030092209A1 (en) 2003-05-15
CA2405517C (en) 2009-12-22
KR100900933B1 (en) 2009-06-08
FR2807909A1 (en) 2001-10-19
JP5296280B2 (en) 2013-09-25
ATE524836T1 (en) 2011-09-15
EP1273049B1 (en) 2011-09-14
JP2003530703A (en) 2003-10-14
FR2807909B1 (en) 2006-07-28
CN1422444A (en) 2003-06-04
KR20030001405A (en) 2003-01-06
EP1273049A1 (en) 2003-01-08
US6730943B2 (en) 2004-05-04
WO2001078157A1 (en) 2001-10-18

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