AU2001250486A1 - Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device - Google Patents
Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination deviceInfo
- Publication number
- AU2001250486A1 AU2001250486A1 AU2001250486A AU5048601A AU2001250486A1 AU 2001250486 A1 AU2001250486 A1 AU 2001250486A1 AU 2001250486 A AU2001250486 A AU 2001250486A AU 5048601 A AU5048601 A AU 5048601A AU 2001250486 A1 AU2001250486 A1 AU 2001250486A1
- Authority
- AU
- Australia
- Prior art keywords
- layer
- light
- emitting diode
- illumination device
- gainn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000005286 illumination Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 239000003086 colorant Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. Method for preparing this layer. Light emitting diode (LED), particularly a LED emitting white light comprising such a thin layer in its active zone, and lighting device comprising such a diode.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0004683A FR2807909B1 (en) | 2000-04-12 | 2000-04-12 | GaInN SEMICONDUCTOR THIN LAYER, PROCESS FOR PREPARING SAME; LED COMPRISING THIS LAYER AND LIGHTING DEVICE COMPRISING SAID LED |
FR0004683 | 2000-04-12 | ||
PCT/FR2001/001115 WO2001078157A1 (en) | 2000-04-12 | 2001-04-11 | Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001250486A1 true AU2001250486A1 (en) | 2001-10-23 |
Family
ID=8849163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001250486A Abandoned AU2001250486A1 (en) | 2000-04-12 | 2001-04-11 | Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device |
Country Status (10)
Country | Link |
---|---|
US (1) | US6730943B2 (en) |
EP (1) | EP1273049B1 (en) |
JP (1) | JP5296280B2 (en) |
KR (1) | KR100900933B1 (en) |
CN (1) | CN1422444A (en) |
AT (1) | ATE524836T1 (en) |
AU (1) | AU2001250486A1 (en) |
CA (1) | CA2405517C (en) |
FR (1) | FR2807909B1 (en) |
WO (1) | WO2001078157A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2810159B1 (en) * | 2000-06-09 | 2005-04-08 | Centre Nat Rech Scient | THICK LAYER OF GALLIUM NITRIDE OR MIXED NITRIDE OF GALLIUM AND ANOTHER METAL, PROCESS FOR PREPARING THE SAME, AND ELECTRONIC OR OPTOELECTRONIC DEVICE COMPRISING SUCH A LAYER |
DE20307958U1 (en) * | 2003-05-21 | 2003-09-04 | Arturo Salice S.P.A., Novedrate, Como | Body element with flap |
JP2004356522A (en) * | 2003-05-30 | 2004-12-16 | Sumitomo Chem Co Ltd | Group 3-5 compound semiconductor, its manufacturing method, and its use |
NL1023679C2 (en) * | 2003-06-17 | 2004-12-20 | Tno | Light-emitting diode. |
TWI247439B (en) * | 2004-12-17 | 2006-01-11 | Genesis Photonics Inc | Light-emitting diode device |
FR2888664B1 (en) * | 2005-07-18 | 2008-05-02 | Centre Nat Rech Scient | METHOD FOR MAKING A BIPOLAR HETEROJUNCTION TRANSISTOR |
KR100771811B1 (en) * | 2005-12-27 | 2007-10-30 | 삼성전기주식회사 | White light emitting device |
FR2898434B1 (en) * | 2006-03-13 | 2008-05-23 | Centre Nat Rech Scient | MONOLITHIC WHITE ELECTROLUMINESCENT DIODE |
FR2912552B1 (en) * | 2007-02-14 | 2009-05-22 | Soitec Silicon On Insulator | MULTILAYER STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
FR2932608B1 (en) * | 2008-06-13 | 2011-04-22 | Centre Nat Rech Scient | METHOD FOR GROWING NITRIDE OF ELEMENTS OF GROUP III. |
JP5136437B2 (en) * | 2009-01-23 | 2013-02-06 | 住友電気工業株式会社 | Method for fabricating nitride-based semiconductor optical device |
US8912554B2 (en) | 2011-06-08 | 2014-12-16 | Micron Technology, Inc. | Long wavelength light emitting device with photoluminescence emission and high quantum efficiency |
DE102014107472A1 (en) | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Semiconductor device and lighting device |
WO2017089857A1 (en) | 2015-11-23 | 2017-06-01 | Ecole Polytechnique Federale De Lausanne (Epfl) | Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3247437B2 (en) * | 1992-03-10 | 2002-01-15 | 旭化成株式会社 | Nitride-based semiconductor device and method of manufacturing the same |
JP3361285B2 (en) * | 1996-01-19 | 2003-01-07 | 松下電器産業株式会社 | Gallium nitride based compound semiconductor light emitting device and method of manufacturing gallium nitride based compound semiconductor |
JP3314620B2 (en) * | 1996-04-11 | 2002-08-12 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3543498B2 (en) * | 1996-06-28 | 2004-07-14 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
JP3675044B2 (en) * | 1996-06-28 | 2005-07-27 | 豊田合成株式会社 | Group 3 nitride semiconductor light emitting device |
US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
JP3394678B2 (en) * | 1997-02-14 | 2003-04-07 | シャープ株式会社 | Semiconductor light emitting device |
JPH10270756A (en) * | 1997-03-27 | 1998-10-09 | Sanyo Electric Co Ltd | Gallium nitride compound semiconductor device |
JP3880683B2 (en) * | 1997-04-23 | 2007-02-14 | シャープ株式会社 | Method for manufacturing gallium nitride based semiconductor light emitting device |
JPH10335700A (en) * | 1997-06-04 | 1998-12-18 | Toshiba Corp | Semiconductor light emitting device and manufacture thereof |
JPH1187773A (en) * | 1997-09-08 | 1999-03-30 | Toshiba Corp | Light emitting element |
JPH11135838A (en) * | 1997-10-20 | 1999-05-21 | Ind Technol Res Inst | White-color light-emitting diode and manufacture thereof |
JPH11121806A (en) * | 1997-10-21 | 1999-04-30 | Sharp Corp | Semiconductor light emitting device |
JPH11233827A (en) * | 1998-02-10 | 1999-08-27 | Furukawa Electric Co Ltd:The | Semiconductor light emitting device |
JP3978858B2 (en) * | 1998-04-03 | 2007-09-19 | 松下電器産業株式会社 | Gallium nitride compound semiconductor light emitting device |
JP3543628B2 (en) * | 1998-08-13 | 2004-07-14 | ソニー株式会社 | Method for growing nitride III-V compound semiconductor and method for manufacturing semiconductor light emitting device |
JP3511923B2 (en) * | 1998-12-25 | 2004-03-29 | 日亜化学工業株式会社 | Light emitting element |
US6303404B1 (en) * | 1999-05-28 | 2001-10-16 | Yong Tae Moon | Method for fabricating white light emitting diode using InGaN phase separation |
-
2000
- 2000-04-12 FR FR0004683A patent/FR2807909B1/en not_active Expired - Fee Related
-
2001
- 2001-04-11 AU AU2001250486A patent/AU2001250486A1/en not_active Abandoned
- 2001-04-11 US US10/257,515 patent/US6730943B2/en not_active Expired - Lifetime
- 2001-04-11 WO PCT/FR2001/001115 patent/WO2001078157A1/en active Application Filing
- 2001-04-11 AT AT01923799T patent/ATE524836T1/en not_active IP Right Cessation
- 2001-04-11 CA CA002405517A patent/CA2405517C/en not_active Expired - Fee Related
- 2001-04-11 JP JP2001574912A patent/JP5296280B2/en not_active Expired - Fee Related
- 2001-04-11 EP EP01923799A patent/EP1273049B1/en not_active Expired - Lifetime
- 2001-04-11 CN CN01807936.9A patent/CN1422444A/en active Pending
- 2001-04-11 KR KR1020027013484A patent/KR100900933B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2405517A1 (en) | 2001-10-18 |
US20030092209A1 (en) | 2003-05-15 |
CA2405517C (en) | 2009-12-22 |
KR100900933B1 (en) | 2009-06-08 |
FR2807909A1 (en) | 2001-10-19 |
JP5296280B2 (en) | 2013-09-25 |
ATE524836T1 (en) | 2011-09-15 |
EP1273049B1 (en) | 2011-09-14 |
JP2003530703A (en) | 2003-10-14 |
FR2807909B1 (en) | 2006-07-28 |
CN1422444A (en) | 2003-06-04 |
KR20030001405A (en) | 2003-01-06 |
EP1273049A1 (en) | 2003-01-08 |
US6730943B2 (en) | 2004-05-04 |
WO2001078157A1 (en) | 2001-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1162670A3 (en) | White light emitting diode and method for fabricating the same | |
ATE537564T1 (en) | LUMINESCENT LIGHT SOURCE, METHOD FOR PRODUCING SAME AND LIGHT EMITTING DEVICE | |
AU6614701A (en) | Light-emitting devices | |
FR2814220B1 (en) | VEHICLE LAMP COMPRISING SEVERAL PHOTOEMISSIVE DIODES | |
AU2001250486A1 (en) | Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device | |
EP0971421A3 (en) | White color light emitting diode and neutral color light emitting diode | |
WO2006049844A3 (en) | High brightness light emitting diode light source | |
EP2224467A3 (en) | High power AllnGaN based multi-chip light emitting diode | |
WO2000060381A3 (en) | Flat panel solid state light source | |
CA2515250A1 (en) | Diffuser with light emitting diode nightlight | |
EP1398839A4 (en) | Light emitting device comprising led chip | |
WO2007142946A3 (en) | Lighting device and method of lighting | |
EP1670074A3 (en) | Light emitting diode headlamp | |
NO20043020L (en) | A lighting apparatus | |
TW200715547A (en) | Illumination device | |
ATE403366T1 (en) | LIGHTING ELEMENT WITH AT LEAST ONE SUBSTRATE AND ONE LIGHT-EMITTING COATING | |
AUPQ818100A0 (en) | Led lamp | |
CN102305361A (en) | Compound OLED (Organic Light Emitting Diode) and LED (Light Emitting Diode) light fitting | |
ATE389143T1 (en) | LED ARRANGEMENT WITH REFLECTOR | |
ATE369408T1 (en) | IRIDIUM COMPLEX LIGHT EMITTING DEVICE | |
KR100583023B1 (en) | A packaging of a light emitting diode | |
TW200802979A (en) | Light emitting diode chip | |
CN202140862U (en) | Lamp compounding OLED (organic light-emitting diode) and LED (light-emitting diode) | |
RU2010140681A (en) | LIGHTING DEVICE AND METHOD FOR FORMING A LIGHT MIXTURE WITH THIS DEVICE | |
CN201057376Y (en) | LED mine lamp |