GB2243716B - Self-aligned,planar heterojunction bipolar transistor and method of forming the same - Google Patents

Self-aligned,planar heterojunction bipolar transistor and method of forming the same

Info

Publication number
GB2243716B
GB2243716B GB8924432A GB8924432A GB2243716B GB 2243716 B GB2243716 B GB 2243716B GB 8924432 A GB8924432 A GB 8924432A GB 8924432 A GB8924432 A GB 8924432A GB 2243716 B GB2243716 B GB 2243716B
Authority
GB
United Kingdom
Prior art keywords
aligned
self
forming
same
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8924432A
Other versions
GB8924432D0 (en
GB2243716A (en
Inventor
Marion D Clark
William E Stanchina
K Vaidyanathan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB8924432D0 publication Critical patent/GB8924432D0/en
Publication of GB2243716A publication Critical patent/GB2243716A/en
Application granted granted Critical
Publication of GB2243716B publication Critical patent/GB2243716B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
GB8924432A 1988-11-02 1989-10-31 Self-aligned,planar heterojunction bipolar transistor and method of forming the same Expired - Lifetime GB2243716B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26627888A 1988-11-02 1988-11-02

Publications (3)

Publication Number Publication Date
GB8924432D0 GB8924432D0 (en) 1991-08-21
GB2243716A GB2243716A (en) 1991-11-06
GB2243716B true GB2243716B (en) 1993-05-05

Family

ID=23013915

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8924432A Expired - Lifetime GB2243716B (en) 1988-11-02 1989-10-31 Self-aligned,planar heterojunction bipolar transistor and method of forming the same

Country Status (1)

Country Link
GB (1) GB2243716B (en)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2010580A (en) * 1977-11-14 1979-06-27 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor device
EP0004292A2 (en) * 1978-03-27 1979-10-03 International Business Machines Corporation Process of making a MESA bipolar transistor with self-aligned base and emitter regions
EP0199497A2 (en) * 1985-04-10 1986-10-29 Fujitsu Limited Process for fabricating a self-aligned bipolar transistor
EP0206787A2 (en) * 1985-06-21 1986-12-30 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method of manufacturing same
GB2179792A (en) * 1985-08-28 1987-03-11 Mitsubishi Electric Corp Bipolar transistor
US4683487A (en) * 1984-11-09 1987-07-28 Hitachi, Ltd. Heterojunction bipolar transistor
EP0255882A2 (en) * 1986-08-07 1988-02-17 Siemens Aktiengesellschaft Npn bipolar transistor with extremely thin emitter/base structure and method for manufacturing the same
EP0289343A1 (en) * 1987-04-30 1988-11-02 Sony Corporation Heterojunction bipolar transistors
EP0312965A2 (en) * 1987-10-23 1989-04-26 Siemens Aktiengesellschaft Method of producing a planar self-aligned heterojunction bipolar transistor
EP0335720A2 (en) * 1988-03-30 1989-10-04 Kabushiki Kaisha Toshiba Bipolar transistor device and method of manufacturing the same
EP0367698A2 (en) * 1988-10-31 1990-05-09 International Business Machines Corporation Heretojunction bipolar transistor

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2010580A (en) * 1977-11-14 1979-06-27 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor device
EP0004292A2 (en) * 1978-03-27 1979-10-03 International Business Machines Corporation Process of making a MESA bipolar transistor with self-aligned base and emitter regions
US4683487A (en) * 1984-11-09 1987-07-28 Hitachi, Ltd. Heterojunction bipolar transistor
EP0199497A2 (en) * 1985-04-10 1986-10-29 Fujitsu Limited Process for fabricating a self-aligned bipolar transistor
EP0206787A2 (en) * 1985-06-21 1986-12-30 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method of manufacturing same
GB2179792A (en) * 1985-08-28 1987-03-11 Mitsubishi Electric Corp Bipolar transistor
EP0255882A2 (en) * 1986-08-07 1988-02-17 Siemens Aktiengesellschaft Npn bipolar transistor with extremely thin emitter/base structure and method for manufacturing the same
EP0289343A1 (en) * 1987-04-30 1988-11-02 Sony Corporation Heterojunction bipolar transistors
EP0312965A2 (en) * 1987-10-23 1989-04-26 Siemens Aktiengesellschaft Method of producing a planar self-aligned heterojunction bipolar transistor
EP0335720A2 (en) * 1988-03-30 1989-10-04 Kabushiki Kaisha Toshiba Bipolar transistor device and method of manufacturing the same
EP0367698A2 (en) * 1988-10-31 1990-05-09 International Business Machines Corporation Heretojunction bipolar transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Applied physics letter, Vol.52 No10, 7 March 1988,pp822-824. *
GaAs Integrated Circuit Symposium,1EEE Technical Digest 1985catalogue No.85CH2182,pp53-56 *

Also Published As

Publication number Publication date
GB8924432D0 (en) 1991-08-21
GB2243716A (en) 1991-11-06

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Expiry date: 20091030