GB2233593A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
GB2233593A
GB2233593A GB9014392A GB9014392A GB2233593A GB 2233593 A GB2233593 A GB 2233593A GB 9014392 A GB9014392 A GB 9014392A GB 9014392 A GB9014392 A GB 9014392A GB 2233593 A GB2233593 A GB 2233593A
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United Kingdom
Prior art keywords
solder
heat sink
plate
lead
jointed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9014392A
Other versions
GB2233593B (en
GB9014392D0 (en
Inventor
Katsuyoshi Izawa
Ryoichi Kobayashi
Masayuki Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB9014392D0 publication Critical patent/GB9014392D0/en
Publication of GB2233593A publication Critical patent/GB2233593A/en
Application granted granted Critical
Publication of GB2233593B publication Critical patent/GB2233593B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

A semiconductor device 2 which is strong to a heat cycle is characterized by a joint by lead-tin alloy solder having a weight ratio of 50+/-5/50-/+5, between an insulation plate (60) and a heat sink plate (80). A further heat sink plate (40) may also be provided. <IMAGE>

Description

-;I,_ SEMICONDUCTOR DEVICE
1 BACKGROUND OF THE INVENTION Field of the Invention
The present invention relates to a semi conductor device.
DISCRIPTION OF THE PRIOR ART
Joints of a semiconductor device are usually jointed by solder, such a technology is disclosed in JP-A-61-139047, for example.
However, where sach a semiconductor device is placed in an engine compartment of an internal combustion engine, it is necessary to solve a problem of heat cycle.
For example, in a prior art semiconductor device, a Pb/Sn/Ag alloy solder (weight ratio 93.5/5/
1.5) which is a so-calld high melting point solder is used. However, in actual, there is a problem of crack in the solder between an insulation plate and a heat sink plate.
SUMMARY OF THE INVENTION
In order to solve the above problem, the present invention is characterized by that at least the insulation plate and the heat sink plate of the semiconductor device are jointed by a lead-tin alloy solder having a weight ratio of 50 5/50T5.
By using the lead-tin alloy having the weight ratio of 50 5/50T5, a semiconductor device which is very strong to a heat cycle is obtained.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 shows a structure of a semiconductor device of the present invention, Fig. 2 shows a result of a durability test, and Figs. 3 to 5 show modifications of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
An embodiment of the present invention is now explained with reference to the drawings.
Fig. 1 shows a construction of an ignition device for an internal combustion engine which uses a semicondutor device. A housing 100 comprises a mold case 1 and a heat sink plate 80 made of copper. The mold case 1 and the heat sink plate 80 are bonded by 20 adhesive material 11 A power switch semiconductor unit 110 and an amplifying semiconductor unit 120 are accommodated in the housing 100, and they are connected by a lead 13. The amplifying semiconductor unit 120 is further connected to an external terminal 12.
The amplifying semiconductor unit 120 1 k 3 1 comprises an amplifier circuit board 9 which is fixedly bonded to the heat sink plate 80 by adhesive material 10.
On the other hand, the power switch semicondutor unit 110 comprises a semiconductor element 2, a molybdenum plate 40 having a heat sink function, and an alumina plate which is an insulation plate, which are jointed by solder. The semiconductor element 2 and the molybdenum plate 40 are jointed by Pb/Sn/Ag alloy solder 3 (weight ratio 93.5/5/1.5) which is colled a high melting point solder), and the molybdenum plate 40 and the alumina plate 60 and the heat sink plate 80 are jointed by lead-tin alloy solder 7 having a weight ratio of 50 5/50:5.
A durability test for a semiconductor device which uses the lead-tin alloy solder having the weight ratio of 50 5/50:5 is now explained.
In the durability test, a tangusten-nickel plated alumina plate of 8.5 mm square and 0.5 mm thick and a semiconductor element (silicon chip) of 8.2 mm square and 0.25 mm thick were placed on a nickel-plated copper plate heat sink) of 3.2 mm thick, and they were jointed by lead-tin solder of 100 pm thick having different compositions to prepare various test somples. They were left at -550C for one hour and at +1500C for one hour. This cycle was repeated and the number of cycles at which a cro-ck was produced between the alumina plate and the copper plate was counted.
( ik Fig. 2 shows a result of the durability test.
An abscissa represents the weight ratio of lead and tin, and an ordinate represent an average life (the number of cycles before the crock is produced).
As seen from Fig. 2, where the lead-tin alloy solder having a weight ratio of 50t5/50T5 was used, no crack was detected over 2000 cycles.
In the embodiment of Fig. 1, the heat sink plate 80 and the alumina plate 60 and the molybdenum plate 40 are jointed by the lead-tin alloy solder 7 having the weight ratio of 50 5/50T5. Alternatively, the semi- conductor element 2 and the molybdenum plate 40 may also be jointed by the lead-tin alloy solder having the weight ratio of 50 50/50T5. However, since the lead-tin alloy solder having the weight ratio of 50 5/50T-5 has a tendency of decreasing the joint strength over 200C, it is preferable that it is used for a part which meets a condition of lower than 2001C. 20 In the semiconductor device of this type, a large contact area is reserved to permit good heat sink property to the insulation plate 60 and the heat sink plate 80 so that the heat of the semiconductor device is escaped. Because of the large contact area, the creLck is more likely to be produced. Accordingly the lead-tin alloy solder having the weight ratio of 50 5/SOTS, is used at least between the heat sink plate 80 and the insulation plate 60.
- 1 Modifications of the embodiment of the present invention are now explained with reference to Figs. 3 to 5.
In Fig. 3, a semiconductor element 2 and an insulation plate 61 made of beryllium oxide are jointed by a high melting point solder 3, and a heat sink plate having a copper plate 81 and an alumina plate 82 jointed and the beryllium oxide insulation plate 61 are jointed by the lead-tin alloy solder having the weight ratio of 50 5/50T5.
In Fig. 4, a semiconductor element 4, a heat sink plate 41 made of copper and an insulation plate 60 mode of alumina are jointed by high melting point solder 3, and the alumina insulation plate 60 and the alumina heat sink plate 82 are jointed by the lead-tin alloy solder 7 having the weight ratio of 50 5/50T5.
In Fig. 5, a semiconductor element 2 and an insulation plate 62 made of aluminum nitride are jointed by high melting point solder 3, and the insulation plate 62 mode of alminum nitride and a heat sink plate 82 mode of aluminum are jointed by lead-tin alloy solder 7 having a weight ratio of 50 5/507-5.
In the above modifications, the insulation plate and the heat sink plate are jointed by the lead-tin alloy solder 7 having the weight ratio of 50 5/50+5. However, where a working temperature is lower than 2000C, the insulation plate and the semiconductor element may also be jointed by the ( 1 C \1 - 6 lead-tin alloy solder having the weight ratio of 50 5/ 50T-5, as described before.
In the embodiment, the power switch semiconductor element is used although other semiconductor 5 element may be used.
In accordance with the present invention, the cracking in the solder between the insulation plate and the heat sink plate during the heat cycle is reduced and a very practical and effective semiconductor device is 10 provided.
z

Claims (3)

  1. CLAIMS:
    A semiconductor device comprising:
    (a) a semiconductor drive element for driving an actuator or the like; (b) an insulation plate jointed to said semiconductor drive element directly through solder or through solder, a heat sink plate and solder; and (c)- a metallic heat sink plate jointed to said insulation plate through lead-tin alloy solder having a weight ratio of 5OtS/50-'5.
  2. 2. A semiconductor device comprising:
    (a) a semiconductor drive element for driving an actuator or the like; (b) an insulation plate jointed to said semiconductor drive element directly through solder or through solder, heat sink plate and solder; and (c) a metallic heat sink plate jointed to said insulation plate by lead- tin allay solder; said lead-tin alloy solder having a property of no crack over substantially 2000 cycles with one cycle comprising being left at -55C for one hour and then being left at +1500C for one hour.
  3. 3. A semiconductor device substantially as herein described with reference to and as shown in Figure 1, or Figure 3 or Figure 4 or Figure 5 of the accompanying drawings.
    Published 1991 at The Patent Office. State House. 66171]li2b Holboni. 1Ando-11 'We I 1 -ITp. Furlher ropjes may be obtained fron, The flatent office.
    t Sales Branch. St Mary Crav. Orping on. Kent BR5 3RD- Printed b Multiplex terhiliques Ild. S1 Man. Cra - v. Kent. Coil. 1/87 --__---------------,.11,111,11,11 l _Iviilz--(-rzii Kent,Coil. iiR7
GB9014392A 1989-06-28 1990-06-28 Semiconductor device Expired - Fee Related GB2233593B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1163990A JP2609724B2 (en) 1989-06-28 1989-06-28 Semiconductor device

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GB9014392D0 GB9014392D0 (en) 1990-08-22
GB2233593A true GB2233593A (en) 1991-01-16
GB2233593B GB2233593B (en) 1993-11-10

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JP (1) JP2609724B2 (en)
KR (1) KR0183010B1 (en)
DE (1) DE4020577C3 (en)
GB (1) GB2233593B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136304A (en) * 1991-11-14 1993-06-01 Mitsubishi Electric Corp Semiconductor module and power controller using same
JP2838625B2 (en) * 1992-09-08 1998-12-16 株式会社日立製作所 Semiconductor module
DE4300516C2 (en) * 1993-01-12 2001-05-17 Ixys Semiconductor Gmbh Power semiconductor module
KR100322177B1 (en) 1993-12-27 2002-05-13 이누이 도모지 Ignition Device for Internal Combustion Engines
DE19609929B4 (en) * 1996-03-14 2006-10-26 Ixys Semiconductor Gmbh The power semiconductor module

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1122238A (en) * 1964-11-18 1968-07-31 English Electric Co Ltd Semi-conductor device
JPS5344176A (en) * 1976-10-04 1978-04-20 Hitachi Cable Ltd Clad solder for semiconductor device
DE3009925C2 (en) * 1980-03-14 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Contact piece for an electrical vacuum switch
JPS57114242A (en) * 1981-01-07 1982-07-16 Hitachi Ltd Semiconductor device
JPS5982734A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Insulation type semiconductor device
JPS6010633A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Semiconductor device
DE3513530A1 (en) * 1984-06-01 1985-12-05 Bbc Brown Boveri & Cie METHOD FOR THE PRODUCTION OF PERFORMANCE SEMICONDUCTOR MODULES WITH INSULATED STRUCTURE
JPS6117355A (en) * 1984-07-03 1986-01-25 Hitachi Ltd Joining of different members by soldering
DE3523808C3 (en) * 1984-07-03 1995-05-04 Hitachi Ltd Process for soldering parts of an electronic arrangement made of different materials and its use
JPS61139047A (en) * 1984-12-11 1986-06-26 Toshiba Corp Semiconductor device

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Publication number Publication date
GB2233593B (en) 1993-11-10
GB9014392D0 (en) 1990-08-22
DE4020577A1 (en) 1991-01-10
KR910001953A (en) 1991-01-31
KR0183010B1 (en) 1999-03-20
JP2609724B2 (en) 1997-05-14
DE4020577C3 (en) 1998-11-12
JPH0330440A (en) 1991-02-08
DE4020577C2 (en) 1994-07-07

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Effective date: 20040628