GB2231720B - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
GB2231720B
GB2231720B GB9008525A GB9008525A GB2231720B GB 2231720 B GB2231720 B GB 2231720B GB 9008525 A GB9008525 A GB 9008525A GB 9008525 A GB9008525 A GB 9008525A GB 2231720 B GB2231720 B GB 2231720B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9008525A
Other versions
GB2231720A (en
GB9008525D0 (en
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB9008525D0 publication Critical patent/GB9008525D0/en
Publication of GB2231720A publication Critical patent/GB2231720A/en
Application granted granted Critical
Publication of GB2231720B publication Critical patent/GB2231720B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
GB9008525A 1989-04-21 1990-04-17 Integrated circuit Expired - Fee Related GB2231720B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10215689 1989-04-21

Publications (3)

Publication Number Publication Date
GB9008525D0 GB9008525D0 (en) 1990-06-13
GB2231720A GB2231720A (en) 1990-11-21
GB2231720B true GB2231720B (en) 1993-08-11

Family

ID=14319867

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9008525A Expired - Fee Related GB2231720B (en) 1989-04-21 1990-04-17 Integrated circuit

Country Status (6)

Country Link
JP (1) JPH0348460A (en)
CA (1) CA2014296C (en)
DE (1) DE4012681A1 (en)
FR (1) FR2646289A1 (en)
GB (1) GB2231720B (en)
NL (1) NL9000949A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243948B (en) * 1990-04-20 1994-06-08 Nobuo Mikoshiba Integrated circuit
JPH1168105A (en) * 1997-08-26 1999-03-09 Mitsubishi Electric Corp Semiconductor device
US7064050B2 (en) * 2003-11-28 2006-06-20 International Business Machines Corporation Metal carbide gate structure and method of fabrication
US7667277B2 (en) * 2005-01-13 2010-02-23 International Business Machines Corporation TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
US8063450B2 (en) 2006-09-19 2011-11-22 Qunano Ab Assembly of nanoscaled field effect transistors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126419A (en) * 1982-08-03 1984-03-21 Tokyo Shibaura Electric Co Materials for MOS device gate electrodes
EP0135163A1 (en) * 1983-08-26 1985-03-27 Siemens Aktiengesellschaft Method of producing highly integrated complementary circuits of MOS field effect transistors
JPS60100473A (en) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp Field effect transistor
JPS60100474A (en) * 1983-11-04 1985-06-04 Shindengen Electric Mfg Co Ltd Semiconductor pressure sensor
EP0239019A2 (en) * 1986-03-22 1987-09-30 Kabushiki Kaisha Toshiba Field-effect transistor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2012712B2 (en) * 1970-03-17 1972-11-02 Siemens AG, 1000 Berlin und 8000 München INTEGRATED BISTABLE TOGGLE SWITCH WITH FIELD EFFECT TRANSISTORS
JPS5214383A (en) * 1975-07-24 1977-02-03 Fujitsu Ltd Mis-type semiconductor device
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS57128967A (en) * 1981-02-02 1982-08-10 Nec Corp Integrated semiconductor device
JPS59168666A (en) * 1983-03-15 1984-09-22 Toshiba Corp Semiconductor device
JPS61137317A (en) * 1984-12-10 1986-06-25 Agency Of Ind Science & Technol Electrode material for semiconductor device
JPS63113895A (en) * 1986-10-30 1988-05-18 Nec Corp Mos type semiconductor integrated circuit device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126419A (en) * 1982-08-03 1984-03-21 Tokyo Shibaura Electric Co Materials for MOS device gate electrodes
EP0135163A1 (en) * 1983-08-26 1985-03-27 Siemens Aktiengesellschaft Method of producing highly integrated complementary circuits of MOS field effect transistors
JPS60100474A (en) * 1983-11-04 1985-06-04 Shindengen Electric Mfg Co Ltd Semiconductor pressure sensor
JPS60100473A (en) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp Field effect transistor
EP0239019A2 (en) * 1986-03-22 1987-09-30 Kabushiki Kaisha Toshiba Field-effect transistor devices

Also Published As

Publication number Publication date
FR2646289B1 (en) 1994-08-19
CA2014296A1 (en) 1990-10-21
JPH0348460A (en) 1991-03-01
CA2014296C (en) 2000-08-01
NL9000949A (en) 1990-11-16
FR2646289A1 (en) 1990-10-26
GB2231720A (en) 1990-11-21
GB9008525D0 (en) 1990-06-13
DE4012681A1 (en) 1990-10-25

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20010417