GB2181297B - Process and relative apparatus for making ohmic type contacts between metal and semiconductor - Google Patents

Process and relative apparatus for making ohmic type contacts between metal and semiconductor

Info

Publication number
GB2181297B
GB2181297B GB8620131A GB8620131A GB2181297B GB 2181297 B GB2181297 B GB 2181297B GB 8620131 A GB8620131 A GB 8620131A GB 8620131 A GB8620131 A GB 8620131A GB 2181297 B GB2181297 B GB 2181297B
Authority
GB
United Kingdom
Prior art keywords
semiconductor
metal
type contacts
making ohmic
relative apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8620131A
Other versions
GB8620131D0 (en
GB2181297A (en
Inventor
Giulio Iannuzzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of GB8620131D0 publication Critical patent/GB8620131D0/en
Publication of GB2181297A publication Critical patent/GB2181297A/en
Application granted granted Critical
Publication of GB2181297B publication Critical patent/GB2181297B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB8620131A 1985-10-01 1986-08-19 Process and relative apparatus for making ohmic type contacts between metal and semiconductor Expired GB2181297B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22325/85A IT1185964B (en) 1985-10-01 1985-10-01 PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS

Publications (3)

Publication Number Publication Date
GB8620131D0 GB8620131D0 (en) 1986-10-01
GB2181297A GB2181297A (en) 1987-04-15
GB2181297B true GB2181297B (en) 1989-06-07

Family

ID=11194694

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8620131A Expired GB2181297B (en) 1985-10-01 1986-08-19 Process and relative apparatus for making ohmic type contacts between metal and semiconductor

Country Status (6)

Country Link
JP (1) JPS6286716A (en)
DE (1) DE3633472A1 (en)
FR (1) FR2588120A1 (en)
GB (1) GB2181297B (en)
IT (1) IT1185964B (en)
NL (1) NL8602453A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043299B1 (en) * 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
EP0448763A1 (en) * 1990-03-30 1991-10-02 Siemens Aktiengesellschaft Process and apparatus for manufacturing conductive layers or structures for highly integrated circuits
DE69121451T2 (en) * 1990-04-16 1997-02-20 Applied Materials Inc Method for producing a titanium silicide layer on a semiconductor layer
DE4339465C2 (en) * 1993-11-19 1997-05-28 Gold Star Electronics Process for treating the surface of a silicon substrate exposed to dry etching

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1177382A (en) * 1966-02-24 1970-01-14 Rca Corp Formerly Known As Rad Method of Making Ohmic Contact to a Semiconductor Body
GB1279229A (en) * 1969-11-03 1972-06-28 Rca Corp Method of metalizing semiconductor devices
GB1410701A (en) * 1972-01-03 1975-10-22 Signetics Corp Schottky barrier diode semiconductor structures
GB1530237A (en) * 1976-05-14 1978-10-25 Data General Corp Method of fabricating metal semiconductor interfaces
EP0057254A2 (en) * 1981-02-03 1982-08-11 Siemens Aktiengesellschaft Method of producing extremely fine features
GB2174542A (en) * 1985-03-29 1986-11-05 Sharp Kk A method and apparatus for the production of semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107835A (en) * 1977-02-11 1978-08-22 Bell Telephone Laboratories, Incorporated Fabrication of semiconductive devices
JPS57157525A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Surface treating method
JPS6077429A (en) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd Dry etching method
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4605479A (en) * 1985-06-24 1986-08-12 Rca Corporation In-situ cleaned ohmic contacts

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1177382A (en) * 1966-02-24 1970-01-14 Rca Corp Formerly Known As Rad Method of Making Ohmic Contact to a Semiconductor Body
GB1279229A (en) * 1969-11-03 1972-06-28 Rca Corp Method of metalizing semiconductor devices
GB1410701A (en) * 1972-01-03 1975-10-22 Signetics Corp Schottky barrier diode semiconductor structures
GB1530237A (en) * 1976-05-14 1978-10-25 Data General Corp Method of fabricating metal semiconductor interfaces
EP0057254A2 (en) * 1981-02-03 1982-08-11 Siemens Aktiengesellschaft Method of producing extremely fine features
GB2174542A (en) * 1985-03-29 1986-11-05 Sharp Kk A method and apparatus for the production of semiconductor devices

Also Published As

Publication number Publication date
IT1185964B (en) 1987-11-18
FR2588120A1 (en) 1987-04-03
GB8620131D0 (en) 1986-10-01
NL8602453A (en) 1987-05-04
IT8522325A0 (en) 1985-10-01
GB2181297A (en) 1987-04-15
DE3633472A1 (en) 1987-04-02
JPS6286716A (en) 1987-04-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030819