GB2153589B - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
GB2153589B
GB2153589B GB08502348A GB8502348A GB2153589B GB 2153589 B GB2153589 B GB 2153589B GB 08502348 A GB08502348 A GB 08502348A GB 8502348 A GB8502348 A GB 8502348A GB 2153589 B GB2153589 B GB 2153589B
Authority
GB
United Kingdom
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08502348A
Other versions
GB2153589A (en
GB8502348D0 (en
Inventor
Hirohisa Tanaka
Yutaka Takafuji
Mitsuhiro Koden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB8502348D0 publication Critical patent/GB8502348D0/en
Publication of GB2153589A publication Critical patent/GB2153589A/en
Application granted granted Critical
Publication of GB2153589B publication Critical patent/GB2153589B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
GB08502348A 1984-01-30 1985-01-30 Thin film transistor Expired GB2153589B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1676384A JPS60160173A (en) 1984-01-30 1984-01-30 Thin film transistor

Publications (3)

Publication Number Publication Date
GB8502348D0 GB8502348D0 (en) 1985-02-27
GB2153589A GB2153589A (en) 1985-08-21
GB2153589B true GB2153589B (en) 1988-10-12

Family

ID=11925260

Family Applications (2)

Application Number Title Priority Date Filing Date
GB08502348A Expired GB2153589B (en) 1984-01-30 1985-01-30 Thin film transistor
GB08723748A Expired GB2197985B (en) 1984-01-30 1987-10-09 Liquid crystal display

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08723748A Expired GB2197985B (en) 1984-01-30 1987-10-09 Liquid crystal display

Country Status (3)

Country Link
JP (1) JPS60160173A (en)
DE (1) DE3502911A1 (en)
GB (2) GB2153589B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9142570B2 (en) 2009-07-31 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9224870B2 (en) 2009-07-31 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
US9362416B2 (en) 2009-07-31 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor wearable device

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593327B1 (en) * 1986-01-23 1988-10-28 Commissariat Energie Atomique METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING TWO OR THREE LEVELS OF MASKING
JPH0766253B2 (en) * 1986-06-20 1995-07-19 松下電器産業株式会社 Matrix type image display device
FR2605442B1 (en) * 1986-10-17 1988-12-09 Thomson Csf ELECTROOPTIC VISUALIZATION SCREEN WITH CONTROL TRANSISTORS AND METHOD FOR PRODUCING THE SAME
JPS63166236A (en) * 1986-12-26 1988-07-09 Toshiba Corp Electronic device
JPH01173650A (en) * 1987-12-26 1989-07-10 Seikosha Co Ltd Manufacture of amorphous silicon thin-film transistor
EP0408653A4 (en) * 1988-03-31 1991-10-16 Solarex Corporation Gate dielectric for a thin film field effect transistor
FR2631743A1 (en) * 1988-05-23 1989-11-24 Gen Electric STRUCTURE WITH NON-COPLANAR ELECTRODES FOR LIQUID CRYSTAL MATRIX DISPLAY WITH AMORPHOUS SILICON THIN FILM TRANSISTORS AND MANUFACTURING METHOD
JPH0283981A (en) * 1988-09-21 1990-03-26 Fuji Xerox Co Ltd Thin film transistor
JPH0348463A (en) * 1989-03-01 1991-03-01 Mitsubishi Electric Corp Thin film transistor
EP0445535B1 (en) 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Method of forming an oxide film
EP0459763B1 (en) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
EP0535979A3 (en) * 1991-10-02 1993-07-21 Sharp Kabushiki Kaisha A thin film transistor and a method for producing the same
JP3369055B2 (en) * 1996-09-06 2003-01-20 シャープ株式会社 Thin film semiconductor device and method of manufacturing the same
US5814530A (en) * 1996-09-27 1998-09-29 Xerox Corporation Producing a sensor with doped microcrystalline silicon channel leads
US5959312A (en) * 1996-09-27 1999-09-28 Xerox Corporation Sensor with doped microcrystalline silicon channel leads with bubble formation protection means
JP3683463B2 (en) 1999-03-11 2005-08-17 シャープ株式会社 Active matrix substrate, manufacturing method thereof, and image sensor using the substrate
JP3916823B2 (en) 1999-04-07 2007-05-23 シャープ株式会社 Active matrix substrate, manufacturing method thereof, and flat panel image sensor
WO2011013596A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101073543B1 (en) * 2009-09-04 2011-10-17 삼성모바일디스플레이주식회사 Organic light emitting diode display
KR102330543B1 (en) 2012-04-13 2021-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840695A (en) * 1972-10-10 1974-10-08 Westinghouse Electric Corp Liquid crystal image display panel with integrated addressing circuitry
GB2064866A (en) * 1979-11-30 1981-06-17 Gen Electric Co Ltd Field effect semiconductor device
JPS5679472A (en) * 1979-12-04 1981-06-30 Toshiba Corp Preparing method of mos-type semiconductor device
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
JPS58147069A (en) * 1982-02-25 1983-09-01 Sharp Corp Thin film transistor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142570B2 (en) 2009-07-31 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9224870B2 (en) 2009-07-31 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
US9293601B2 (en) 2009-07-31 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US9362416B2 (en) 2009-07-31 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor wearable device
US9515192B2 (en) 2009-07-31 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9196745B2 (en) 2011-07-08 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9530897B2 (en) 2011-07-08 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
GB2197985B (en) 1988-10-12
GB2153589A (en) 1985-08-21
JPS60160173A (en) 1985-08-21
GB8502348D0 (en) 1985-02-27
GB8723748D0 (en) 1987-11-11
GB2197985A (en) 1988-06-02
DE3502911A1 (en) 1985-08-01

Similar Documents

Publication Publication Date Title
GB2153589B (en) Thin film transistor
GB8421403D0 (en) Thin film transistor
GB2171842B (en) Thin film transistor
EP0276002A3 (en) Thin film transistor
GB8411967D0 (en) Thin film transistors
KR970008455B1 (en) Thin film transistor
GB2077994B (en) Thin film transistors
GB2185622B (en) Thin film transistor array
GB8607278D0 (en) Thin film forming
EP0383743A3 (en) Thin film transistor
GB2084795B (en) Thin film transistor
GB8601878D0 (en) Film
GB8518833D0 (en) Forming moncrystalline thin film
GB2169746B (en) Thin film transistor
GB8601877D0 (en) Film
GB8603522D0 (en) Manufacturing thin film transistor
GB8334314D0 (en) Thin film transistor
EP0159027A3 (en) Magnetic thin film
IL74685A0 (en) Thin film field effect transistors utilizing a polypnictide semiconductor
GB8510576D0 (en) Producing thin film
EP0159028A3 (en) Magnetic thin film
GB8311219D0 (en) Thin film transistor
GB8518834D0 (en) Forming moncrystalline thin film
GB8704714D0 (en) Thin film transistors
GB8527737D0 (en) Manufacturing thin film transistors

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20050129