GB2109184B - Controlling conduction of semiconductor device - Google Patents
Controlling conduction of semiconductor deviceInfo
- Publication number
- GB2109184B GB2109184B GB08131805A GB8131805A GB2109184B GB 2109184 B GB2109184 B GB 2109184B GB 08131805 A GB08131805 A GB 08131805A GB 8131805 A GB8131805 A GB 8131805A GB 2109184 B GB2109184 B GB 2109184B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- controlling conduction
- conduction
- controlling
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
- Generation Of Surge Voltage And Current (AREA)
- Electronic Switches (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08131805A GB2109184B (en) | 1981-10-22 | 1981-10-22 | Controlling conduction of semiconductor device |
DE19823238127 DE3238127A1 (en) | 1981-10-22 | 1982-10-14 | ARRANGEMENT FOR CONTROLLING SEMICONDUCTOR CIRCUITS |
FR8217533A FR2515443B1 (en) | 1981-10-22 | 1982-10-20 | TRANSFORMER COUPLED EXCITATION MOUNT |
JP57184761A JPS5881333A (en) | 1981-10-22 | 1982-10-22 | Conduction level switching drive device for semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08131805A GB2109184B (en) | 1981-10-22 | 1981-10-22 | Controlling conduction of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2109184A GB2109184A (en) | 1983-05-25 |
GB2109184B true GB2109184B (en) | 1984-11-07 |
Family
ID=10525323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08131805A Expired GB2109184B (en) | 1981-10-22 | 1981-10-22 | Controlling conduction of semiconductor device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5881333A (en) |
DE (1) | DE3238127A1 (en) |
FR (1) | FR2515443B1 (en) |
GB (1) | GB2109184B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3346635A1 (en) * | 1983-12-23 | 1985-07-04 | Krone Gmbh, 1000 Berlin | Circuit arrangement of an electronic heavy-current switch |
DE3527130A1 (en) * | 1985-07-29 | 1987-01-29 | Flachenecker Gerhard | Switching amplifier with a field effect transistor |
FR2587157B1 (en) * | 1985-09-06 | 1987-11-20 | Thomson Csf | VOLTAGE SWITCHING DEVICE |
JPS63187724A (en) * | 1987-01-29 | 1988-08-03 | Fanuc Ltd | Predrive circuit |
FR2669477A1 (en) * | 1990-11-16 | 1992-05-22 | Gen Electric Cgr | LOW FREQUENCY FREQUENCY SWITCHING CONTROL CIRCUIT FOR FIELD EFFECT TRANSISTORS AND BIPOLAR ISOLATED GRID TRANSISTORS. |
FR2693604B1 (en) * | 1992-07-10 | 1994-10-07 | Sgs Thomson Microelectronics | Pulse-controlled converter and electric motor control. |
DE19534888A1 (en) * | 1995-09-20 | 1997-03-27 | Bosch Gmbh Robert | Circuit arrangement for multiple use of a transformer core |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4871958A (en) * | 1971-12-28 | 1973-09-28 | ||
DE2431006A1 (en) * | 1974-06-27 | 1976-01-08 | Rohde & Schwarz | Pulse controlled on-off switch - has two junction field-effect transistors whose drain-source paths are used for switching |
DE3028986A1 (en) * | 1980-07-30 | 1982-03-04 | Siemens AG, 1000 Berlin und 8000 München | MOS FET switch - has triple wound input transformer with blocking oscillator |
DE3124891C2 (en) * | 1981-06-25 | 1985-06-13 | Brown, Boveri & Cie Ag, 6800 Mannheim | Transistor switching stage |
-
1981
- 1981-10-22 GB GB08131805A patent/GB2109184B/en not_active Expired
-
1982
- 1982-10-14 DE DE19823238127 patent/DE3238127A1/en not_active Withdrawn
- 1982-10-20 FR FR8217533A patent/FR2515443B1/en not_active Expired
- 1982-10-22 JP JP57184761A patent/JPS5881333A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2109184A (en) | 1983-05-25 |
FR2515443A1 (en) | 1983-04-29 |
FR2515443B1 (en) | 1985-11-15 |
DE3238127A1 (en) | 1983-05-05 |
JPS5881333A (en) | 1983-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3277268D1 (en) | Chip-array-constructed semiconductor device | |
DE3276920D1 (en) | Semiconductor device | |
EP0072221A3 (en) | Improved semiconductor device | |
JPS57154879A (en) | Semiconductor device | |
EP0071748A3 (en) | Thermal conduction element for semiconductor devices | |
GB2150755B (en) | Semiconductor device structures | |
DE3277269D1 (en) | Semiconductor device connection lead formation | |
KR910001908B1 (en) | Semiconductor device | |
JPS57143860A (en) | Semiconductor device | |
GB2097585B (en) | Semiconductor device | |
EP0077559A3 (en) | Wafer transforming device | |
EP0130591A3 (en) | Semiconductor device of resin-seal type | |
DE3267132D1 (en) | Semiconductor switching device | |
DE3277891D1 (en) | Planar semiconductor device | |
JPS57153442A (en) | Semiconductor device | |
DE3278002D1 (en) | Compression-type semiconductor device | |
EP0076495A3 (en) | Photo-detective semiconductor device | |
DE3278058D1 (en) | Power semiconductor device | |
DE3275045D1 (en) | Controlled breakover bidirectional semiconductor switch | |
AU552505B2 (en) | Semiconductor device | |
GB2095471B (en) | Semiconductor device | |
GB2109184B (en) | Controlling conduction of semiconductor device | |
GB2101404B (en) | Semiconductor switch device | |
IE821143L (en) | Semiconductor device | |
GB2105109B (en) | Thermosensitive semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921022 |