GB2105908A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2105908A
GB2105908A GB08228266A GB8228266A GB2105908A GB 2105908 A GB2105908 A GB 2105908A GB 08228266 A GB08228266 A GB 08228266A GB 8228266 A GB8228266 A GB 8228266A GB 2105908 A GB2105908 A GB 2105908A
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB08228266A
Inventor
Tsuneyoshi Aoki
Hidemi Takakuwa
Akiyasu Ishitani
Kaoru Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB2105908A publication Critical patent/GB2105908A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
GB08228266A 1981-02-05 1982-02-04 Semiconductor device Withdrawn GB2105908A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1606381A JPS57130476A (en) 1981-02-05 1981-02-05 Semiconductor device

Publications (1)

Publication Number Publication Date
GB2105908A true GB2105908A (en) 1983-03-30

Family

ID=11906111

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08228266A Withdrawn GB2105908A (en) 1981-02-05 1982-02-04 Semiconductor device

Country Status (6)

Country Link
EP (1) EP0071648A4 (en)
JP (1) JPS57130476A (en)
DE (1) DE3231668T (en)
GB (1) GB2105908A (en)
NL (1) NL8220025A (en)
WO (1) WO1982002799A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669101B2 (en) * 1983-08-25 1994-08-31 松下電子工業株式会社 Method for manufacturing semiconductor device
JPS6237974A (en) * 1985-08-13 1987-02-18 Matsushita Electronics Corp Semiconductor device
JP3255186B2 (en) * 1992-08-24 2002-02-12 ソニー株式会社 Protection device and solid-state image sensor
US5399893A (en) * 1993-08-24 1995-03-21 Motorola, Inc. Diode protected semiconductor device
US9276097B2 (en) * 2012-03-30 2016-03-01 Infineon Technologies Austria Ag Gate overvoltage protection for compound semiconductor transistors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors
JPS52146185A (en) * 1976-05-28 1977-12-05 Fujitsu Ltd Semiconductor integrated circuit
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device
JPS5793579A (en) * 1980-12-03 1982-06-10 Toshiba Corp Compound semiconductor device

Also Published As

Publication number Publication date
WO1982002799A1 (en) 1982-08-19
EP0071648A1 (en) 1983-02-16
JPS57130476A (en) 1982-08-12
NL8220025A (en) 1983-01-03
EP0071648A4 (en) 1985-02-18
DE3231668T (en) 1983-02-10

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)