GB2071959A - Signal pick-up circuit arrangements - Google Patents
Signal pick-up circuit arrangements Download PDFInfo
- Publication number
- GB2071959A GB2071959A GB8104862A GB8104862A GB2071959A GB 2071959 A GB2071959 A GB 2071959A GB 8104862 A GB8104862 A GB 8104862A GB 8104862 A GB8104862 A GB 8104862A GB 2071959 A GB2071959 A GB 2071959A
- Authority
- GB
- United Kingdom
- Prior art keywords
- signal
- output
- charge
- sample
- reference level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 238000001514 detection method Methods 0.000 claims description 9
- 230000003111 delayed effect Effects 0.000 claims description 4
- 238000005070 sampling Methods 0.000 abstract description 28
- 239000007787 solid Substances 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
In a signal pick-up circuit arrangement comprising a solid state image pick-up device including charge transfer elements - eg CCD's - for producing elemental output charges corresponding to an image, wherein during each elemental output interval ( tau B), there is produced in sequence a reference level portion (TP) and a signal portion (TS) which is derived by charging or discharging a capacitance in response to the output charge, both the reference level portion and the signal portion may be contaminated with noise (N). The noise is therefore removed by deriving the difference between the reference level portion and the signal portion. The difference is produced by a differential amplifier (16), either fed with the signal both direct, and via a delay (15) and followed by a sample and hold circuit (10), or by sample and hold circuits, sampling and holding the reference level portion and signal portion for simultaneous comparison. <IMAGE>
Description
SPECIFICATION
Signal pick-up circuit arrangements
This invention relates to signal pick-up circuit arrangements.
Figure 1 of the accompanying drawings is a circuit diagram showing an example of a previously proposed output or signal pick-up circuit for a charge coupled device (CCD) image sensor. In this example, the COD image sensor is of the frame transfer type, and the minority carriers which are stored to represent the information are electrons.In Figure 1,the portion to the left of a dotted line P is the COD image sensor which is formed on one integrated circuit chip and the portion to the right is a sampling and hold circuit serving as a wave shaping circuit
The COD image sensor comprises an image pickup device 1 with an output terminal 1 a, and comprising a photo-sensitive area 2, a storage area 3 for the photo-sensitive area 2, a read-out register 4 for the storage area 3, and an output gate and output diode portion 5 which is reversely biased.
The signal charge produced in the photo-sensitive area 2 is transferred to the storage area 3, and in the photo-sensitive area 2 a photo-electric conversion is carried out such that the signal charge temporarily stored in the storage area 3 is transferred to the read-out register4 at every one line in the horizontal direction and supplied in time multiplex through the output gate and output diode portion 5. The output terminal of the output gate and output diode portion 5 is grounded through a capacitor 6 and also connected to the source of a field effect transistor (FET) 7 which has the drain supplied with a dc voltage ER and the gate supplied with a pre-charge pulse Pa (Figure 2A of the accompanying drawings) which is synchronized with the transfer clock signal for the read-out register 4.The connection point between the output gate and diode portion 5 and the capacitor 6 is connected to the gate of an FET 8 which has the drain supplied with a dc voltage E and the source connected to the output terminal 1 a.
During a time interval Tp within which the precharge pulse Pa is at a high level as shown in Figure 2A, the FET 7 is ON and hence the capacitor 6 is pre-charged up to the voltage ER. When a time interval Ts within which the pre-charge pulse Pa is at a low level arrives, the FET 7 turns OFF and hence the voltage across the capacitor 6 becomes low in reponse to the output signal charge. Therefore, when the voltage ER is taken as a reference level, the voltage across the capacitor 6 in the interval Ts becomes the signal level.
In this case, since the pulse Pa is synchronized with the transfer clock signal for the read-out register 4, a charge detected output voltage VO, in which the pre-charge level and the signal level will repeat at every one stage portion of the read-out register 4, that is at every bit portion thereof, appears across the capacitor 6 and this voltage VO is supplied to the output terminal 1 a through the FET 8 which forms a buffer amplifier (Figure 2B of the accompanying drawings).
In this example, in practice, the pulse Pa passes into the signal path through the stray capacitance between the gate and the source of the FET 7, so that a spurious voltage component Ep caused by the pulse Pa is superimposed on the output voltage VO developed at the output terminal 1 a, as shown in
Figure 2B. Since the spurious voltage component Ep is approximately constant, no trouble will occur even if a signal higher than the voltage ER by the amount of the spurious voltage component Ep is taken as the reference level for the signal level. Therefore, no trouble in fact occurs even if the voltage ER + Ep, which is higher than the normal pre-charge level by the spurious voltage component Ep, is taken as the pre-charge level.
The output voltage VO thus supplied to the output terminal la is supplied to a sampling and hold circuit 10 or to the drain of an FET 11 therein for sampling.
The FET 11 is supplied at its gate with a sampling pulse Pb which has a high level in the signal level interval Ts of the output voltage VO as shown in
Figure 2C of the accompanying drawings, so that the
FET 11 turns ON within the high level interval of the sampling pulse Pb and hence the signal level of the output voltage VO is sampled. Then, a capacitor 12 for holding in the sampling and hold circuit 10 is charged to the signal level of the sampled signal or discharged, and hence the signal level is held in the capacitor 12. A held voltage VH across the capacitor 12 is derived through an FET 13 forming a buffer amplifier to an output terminal ib. Load resistors 9 and 14 are provided for the FETs 8 and 13.
When the charge stored in the COD image sensor is derived after being converted into a voltage as described above, it is necessary that when the minority carriers are electrons, the capacitor 6 is pre-charged at every one bit. In the pre-charge operation, however, noises such as internal noise in the FET 7 and power source noise for the FET 7 are generated, and the reference pre-charge level is caused to fluctuate due to the noises. Moreover, a level N of the noises produced in the pre-charge interval is held by the capacitor 6 in the one-bit interval TB which equals Tp + Ts, or the noise is sample-held and appears in the output.As a result, the output voltage VO fluctuates, as shown by the dotted line in Figure 2B, due to the noise, and hence the signal level in the interval Ts also fluctuates.
Accordingly, if the signal level portion of the output voltage VO is merely sampled and held as in the example of Figure 1, the noise component is mixed into a signal component S and then supplied to the output.
According to the present invention there is provided a signal pick-up circuit arrangement comprising: an image pick-up device including a charge transfer element and for producing an output charge corresponding to an image; first means for receiving said output charge from said image pick-up device and for producing a charge detection signal including a reference level portion and a signal portion which is derived by charging or discharging a capacitance in response to said output charge, said reference level portion and said signal portion each being repeated in corres pondence with each image element of said pick-up device; and second means for deriving a difference output between said reference level portion and said signal portion.
The invention will now be described by way of example with reference to the accompanying drawings, throughout which like references designate like elements, and in which:
Figure 7 is a circuit diagram showing a previously proposed charge detecting circuit which is used as an output deriving circuit of a CCD solid state image pick-up device;
Figures 2A to 2C are waveform diagrams used to explain the operation of the example of Figure 1;
Figure 3 is a diagram showing part of an embodiment of signal pick-up circuit arrangement according to the invention.
Figures 4A to 4C are waveform diagrams used to explain the operation of the embodiment of Figure 3;
Figure 5 is a diagram showing part of another embodiment of the invention; and
Figures 6A to 6G are waveform diagrams used to explain the operation of the embodiment of Figure 5.
The embodiments to be described make use of the fact that the noise level is constant in a one-bit interval tB and no signal component is present in the pre-charge interval Tp, and they eliminate the noise by obtaining the level difference between the levels in the pre-charge interval Tp and the signal level interval Ts.
An embodiment of signal pick-up circuit arrangement according to the invention will now be described with reference to Figure 3 which shows only part of the embodiment, since the remainder is substantially the same as that of the example of
Figure 1, in particular the same as the part to the left of the dotted line Pin Figure 1.
The output voltage VO (Figure 4A) derived at the output terminal 1 a is fed to a delay circuit or line 15 and delayed therein by rd (0 is less than Td is less than TB) as a signal VOd (Figure 4B). This delayed signal VOd is supplied to the inverting input terminal of a differential amplifier 16 which is also supplied at its non-inverting input terminal with the undelayed signal Vo. Thus, the differential amplifier 16 produces a difference output between the signal VO and Void.
The output from the differential amplifier 16 is fed to the sampling and hold circuit 10 as in the example of Figure 1. In this embodiment, the sampling and hold circuit 10 is supplied with a sampling pulse SPO (Figure 4C) whose period is TB and which becomes the level "1 " in a pre-charge interval Tp' of the signals Vod, and hence the value of the output from the differential amplifier 16 in the period Tp' is sample-held.
During the pre-charge period Tp' of the signal Void, one input signal VO to the differential amplifier 16 is the signal component plus the noise component and the other input signal VOd thereto is only the noise component, so that the output from the differentiaf amplifier 16 in this period Tp' becomes such that the noise component is subtracted or removed from the original output signal Vo. Accordingly, the signal level, from which the noise is removed, is sampleheld in the sampling and hold circuit 10 and then supplied as the output to the output terminal 1 b. In
Figures 4A and 4B, the dotted lines show the respective detected signals containing noise.
In the embodiment of Figure 3, in order effectively to carry out the operation of subtracting the noise component from the signal component with the noise component in the differential amplifier 16, it is desired that the above operation is carried out at the last portion of the signal level period Ts where the signal level becomes correct. Therefore, for the delay time td of the delay line 15; td is approximately equal to Ts minus the duration length of Tp is the optimum.
Of course, if the pulse width of the sample pulse
SPo is within the period Tp', the pulse width of the pulse SPO could be shorter than Tp'.
Another embodiment of the invention is shown in
Figure 5. In this embodiment, in place of the delay circuit 15 used in the embodiment of Figure 3, a sampling and hold circuit is employed to delay the signal Vo.
In detail, the output signal VO (Figure 6A) developed at the output terminal 1 a is fed to a sampling and hold circuit 17 which is also supplied with a sampling pulse SP1 (Figure 6B) which has the period TB, the front edge delayed from that of the pre-charge interval Tp of the output signal VO by td +
TB - Tp, and a pulse width equal to the period Tp.
Thus, the signal level portion of the output signal VO is sample-held in the sampling and hold circuit 17 as a held output Hs as shown in Figure 6D. The held output H5 is fed to the inverting input terminal of a differential amplifier 20.
The output signal VO is also supplied to a sampling and hold circuit 18 which is also supplied with a sampling pulse SP2 (Figure 6C) which becomes "1" during the pre-change interval Tp of the signal Vo.
Thus, the level of the signal VO in the interval Tp is sample-heid in the sampling and hold circuit 18. A held output HN1 (Figure 6E) therefrom is fed to a further sampling and hold circuit 19 which is also supplied with the sampling pulse SP1. Thus, the held output HN1 iS sample-held in the sampling and hold circuit 19. A held output HN2 (Figure 6F) therefrom is supplied to the non-inverting input terminal of the differential amplifier 20.
Pulsating voltages Ep' in the respective held outputs Hs,HNl and HN2 shown in Figures 6D, 6E and 6F are spurious pulse components which are generated by the fact that the sampling pulses SP, and SP2 respectively pass into the output signal through the capacitance between the gate and source of FET 11 (Figure 1) in the sampling and hold circuit 10.
In this case, since the held output Hs from the sampling and hold circuit 17 is the sampled value of the output VO in its signal interval Ts, the output Hs includes the signal component and the noise component. While, since the held output HN1 from the sampling and hold circuit 18 is the sampled value of the output VO in its pre-charge interval Tp, the output
HN1 includes no signal component and only the noise component. Accordingly, the noise component can be removed by subtracting the output HN1 from the output Hs. However, since both outputs Hs and HN1 are sample-held outputs of the output VO at different times, there is a phase difference between the spurious pulses in the respective outputs, as apparent from Figures 6D and 6E.Therefore, if the difference between the outputs Hs and HN1 is obtained, the spurious pulses appear as they are.
In the embodiment of Figure 5, however, the output HN1 is further sample-held by the sampling pulse SP1, so that the spurious pulse appearing in the held output HN2 from the sampling and hold circuit 19 is the same in phase as that appearing in the held output Hs. In other words, the sampling and hold circuits 18 and 19 carry out the same operation as that of the delay line 15 in the embodiment of
Figure 3. Thus, the differential amplifier 20 supplies an output 5out to the output terminal 1 b, which includes no noise component and in which the spurious pulse upon the sampling-hold operation is suppressed sufficiently as shown in Figure 6G.
In the above embodiment, the minority carriers stored in the CCD are electrons, so upon detecting the charge, the capacitor 6 is previously charged to the reference level and then discharged in response to the charge. However, when the minority carriers are holes, the stored charge in the capacitor 6 is previously discharged to the reference level and the capacitor 6 is charged in response to the charge.
The invention can be applied not only to CCD charge transfer devices, but also to other charge transfer elements such as bucket bridge devices with the same effect. Moreover, the invention can be applied to a CCD image pick-up device of interline, rather than frame transfer, type.
Claims (7)
1. A signal pick-up circuit arrangement comprising: an image pick-up device including a charge transfer element and for producing an output charge corresponding to an image; first means for receiving said output charge from said image pick-up device and for producing a charge detection signal including a reference level portion and a signal portion which is derived by charging or discharging a capacitance in response to said output charge, said reference level portion and said signal portion each being repeated in correspondence with each image element of said image pick-up device; and second means for deriving a difference output between said reference level portion and said signal portion.
2. An arrangement according to claim 1 wherein second means derives said difference output between a signal which is produced by delaying said charge detection signal and the undelayed said charge detection signal, and sample-holds a reference level portion of said delayed signal.
3. An arrangement according to claim 2 wherein said second means includes a delay circuit for delaying said charge detection signal and a differential amplifier for deriving said difference output.
4. An arrangement according to claim 1 wherein said second means derives said difference output from a sample-held output of the signal portion of said charge detection signal and a sample-held portion of the reference level portion of said charge detection signal.
5. An arrangement according to claim 4 wherein said second means includes a sample-hold circuit for sample-holding the signal level portion of said charge detection signal, and two sample-hold cir cuits for sample-holding a pre-charge level portion of said charge detection signal and delaying the same.
6. A signal pick-up circuit arrangement substantially as hereinbefore described with reference to
Figure 3 of the accompanying drawings.
7. A signal pick-up circuit arrangement substantially as hereinbefore described with reference to
Figure 5 of the accompanying drawings.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985780A JPS56116374A (en) | 1980-02-20 | 1980-02-20 | Charge detection circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2071959A true GB2071959A (en) | 1981-09-23 |
GB2071959B GB2071959B (en) | 1984-02-29 |
Family
ID=12010894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8104862A Expired GB2071959B (en) | 1980-02-20 | 1981-02-17 | Signal pick-up circuit arrangements |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS56116374A (en) |
AT (1) | AT381425B (en) |
CA (2) | CA1161548A (en) |
DE (1) | DE3106359A1 (en) |
GB (1) | GB2071959B (en) |
NL (1) | NL192485C (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2139038A (en) * | 1983-03-02 | 1984-10-31 | Canon Kk | Photoelectric converter with reduced crosstack |
EP0260954A2 (en) * | 1986-09-19 | 1988-03-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
EP0553544A1 (en) * | 1992-01-31 | 1993-08-04 | Matsushita Electric Industrial Co., Ltd. | Multiplexed noise suppression signal recovery for multiphase readout of charge coupled device arrays |
US5311320A (en) * | 1986-09-30 | 1994-05-10 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
US5737016A (en) * | 1985-11-15 | 1998-04-07 | Canon Kabushiki Kaisha | Solid state image pickup apparatus for reducing noise |
EP0848547A1 (en) * | 1996-12-13 | 1998-06-17 | Koninklijke Philips Electronics N.V. | Interface circuit for video camera |
US5771070A (en) * | 1985-11-15 | 1998-06-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus removing noise from the photoelectric converted signal |
US6538693B1 (en) | 1996-01-24 | 2003-03-25 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus having reset noise holding and removing units |
US6657664B2 (en) * | 1995-02-01 | 2003-12-02 | Canon Kabushiki Kaisha | Solid-state image pickup device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3049130A1 (en) * | 1980-12-24 | 1982-07-15 | Robert Bosch Gmbh, 7000 Stuttgart | Read circuit for solid-state imaging array - eliminates noise by reading each line twice and then subtracting |
DE3049043A1 (en) * | 1980-12-24 | 1982-07-15 | Robert Bosch Gmbh, 7000 Stuttgart | METHOD AND ARRANGEMENT FOR SUPPRESSING LOW-FREQUENCY NOISE ON OUTPUT SIGNALS FROM SEMICONDUCTOR SENSORS |
JPS5986379A (en) * | 1982-11-08 | 1984-05-18 | Toshiba Corp | Photoelectric converter |
JPS59143479A (en) * | 1983-02-04 | 1984-08-17 | Hitachi Ltd | Signal reader of solid state image pickup device |
JPS6178284A (en) * | 1984-09-25 | 1986-04-21 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
JPS62122468A (en) * | 1985-11-22 | 1987-06-03 | Fuji Photo Film Co Ltd | Signal read circuit for ccd |
JPS62155575U (en) * | 1986-03-24 | 1987-10-02 | ||
JP2705054B2 (en) * | 1986-08-02 | 1998-01-26 | ソニー株式会社 | Solid-state imaging device |
JPS63233693A (en) * | 1987-03-23 | 1988-09-29 | Hitachi Ltd | Signal processing device for solid-state color camera |
JPS6442990A (en) * | 1987-08-08 | 1989-02-15 | Fujitsu Ltd | Signal sampling system for image pickup device |
JP2557727B2 (en) * | 1990-07-27 | 1996-11-27 | 三洋電機株式会社 | Noise removal circuit for solid-state image sensor |
US5515103A (en) * | 1993-09-30 | 1996-05-07 | Sanyo Electric Co. | Image signal processing apparatus integrated on single semiconductor substrate |
JP2005154133A (en) * | 2003-11-28 | 2005-06-16 | Mitsubishi Electric Corp | Elevator control device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USB299480I5 (en) * | 1972-10-20 | |||
DE2543083C3 (en) * | 1975-09-26 | 1979-01-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Image sensor and method for operating such an image sensor |
US4079423A (en) * | 1976-10-14 | 1978-03-14 | General Electric Company | Solid state imaging system providing pattern noise cancellation |
JPS5822900B2 (en) * | 1978-09-25 | 1983-05-12 | 株式会社日立製作所 | solid-state imaging device |
-
1980
- 1980-02-20 JP JP1985780A patent/JPS56116374A/en active Granted
-
1981
- 1981-02-05 CA CA000370198A patent/CA1161548A/en not_active Expired
- 1981-02-16 NL NL8100741A patent/NL192485C/en not_active IP Right Cessation
- 1981-02-17 GB GB8104862A patent/GB2071959B/en not_active Expired
- 1981-02-19 AT AT0076581A patent/AT381425B/en not_active IP Right Cessation
- 1981-02-20 DE DE19813106359 patent/DE3106359A1/en active Granted
-
1983
- 1983-05-06 CA CA000427684A patent/CA1165434A/en not_active Expired
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2139038A (en) * | 1983-03-02 | 1984-10-31 | Canon Kk | Photoelectric converter with reduced crosstack |
US5771070A (en) * | 1985-11-15 | 1998-06-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus removing noise from the photoelectric converted signal |
US5331421A (en) * | 1985-11-15 | 1994-07-19 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
US5737016A (en) * | 1985-11-15 | 1998-04-07 | Canon Kabushiki Kaisha | Solid state image pickup apparatus for reducing noise |
US6747699B2 (en) | 1985-11-15 | 2004-06-08 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
EP0260954A2 (en) * | 1986-09-19 | 1988-03-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
EP0260954A3 (en) * | 1986-09-19 | 1990-01-17 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
EP0741493A2 (en) * | 1986-09-19 | 1996-11-06 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
EP0741493A3 (en) * | 1986-09-19 | 1998-01-28 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
US5311320A (en) * | 1986-09-30 | 1994-05-10 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
EP0553544A1 (en) * | 1992-01-31 | 1993-08-04 | Matsushita Electric Industrial Co., Ltd. | Multiplexed noise suppression signal recovery for multiphase readout of charge coupled device arrays |
US6657664B2 (en) * | 1995-02-01 | 2003-12-02 | Canon Kabushiki Kaisha | Solid-state image pickup device |
US6538693B1 (en) | 1996-01-24 | 2003-03-25 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus having reset noise holding and removing units |
FR2757336A1 (en) * | 1996-12-13 | 1998-06-19 | Philips Electronics Nv | INTERFACE CIRCUIT FOR VIDEO CAMERA |
EP0848547A1 (en) * | 1996-12-13 | 1998-06-17 | Koninklijke Philips Electronics N.V. | Interface circuit for video camera |
Also Published As
Publication number | Publication date |
---|---|
NL8100741A (en) | 1981-09-16 |
CA1161548A (en) | 1984-01-31 |
NL192485B (en) | 1997-04-01 |
AT381425B (en) | 1986-10-10 |
CA1165434A (en) | 1984-04-10 |
JPS6255349B2 (en) | 1987-11-19 |
DE3106359A1 (en) | 1982-02-11 |
GB2071959B (en) | 1984-02-29 |
DE3106359C2 (en) | 1989-03-16 |
ATA76581A (en) | 1986-02-15 |
NL192485C (en) | 1997-08-04 |
JPS56116374A (en) | 1981-09-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Effective date: 20010216 |