GB2069787B - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
GB2069787B
GB2069787B GB8103251A GB8103251A GB2069787B GB 2069787 B GB2069787 B GB 2069787B GB 8103251 A GB8103251 A GB 8103251A GB 8103251 A GB8103251 A GB 8103251A GB 2069787 B GB2069787 B GB 2069787B
Authority
GB
United Kingdom
Prior art keywords
switching device
semiconductor switching
semiconductor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8103251A
Other versions
GB2069787A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2069787A publication Critical patent/GB2069787A/en
Application granted granted Critical
Publication of GB2069787B publication Critical patent/GB2069787B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB8103251A 1980-02-13 1981-02-03 Semiconductor switching device Expired GB2069787B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1615280A JPS56112751A (en) 1980-02-13 1980-02-13 Switching element

Publications (2)

Publication Number Publication Date
GB2069787A GB2069787A (en) 1981-08-26
GB2069787B true GB2069787B (en) 1985-01-03

Family

ID=11908523

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8103251A Expired GB2069787B (en) 1980-02-13 1981-02-03 Semiconductor switching device

Country Status (4)

Country Link
JP (1) JPS56112751A (en)
CA (1) CA1154172A (en)
DE (1) DE3104743C2 (en)
GB (1) GB2069787B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126959A (en) * 1980-03-12 1981-10-05 Nec Corp Semiconductor device
JPS62198148A (en) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd Semiconductor device
DE3631957A1 (en) * 1986-09-19 1988-03-31 Siemens Ag Circuit arrangement for turning off transistors in a Darlington circuit
GB9127476D0 (en) * 1991-12-30 1992-02-19 Texas Instruments Ltd A semiconductor integrated circuit
JPH05243259A (en) * 1992-03-03 1993-09-21 Mitsubishi Electric Corp Bipolar transistor, manufacture thereof, darlington transistor and manufacture thereof

Also Published As

Publication number Publication date
JPS56112751A (en) 1981-09-05
DE3104743C2 (en) 1983-12-22
DE3104743A1 (en) 1982-01-07
JPS625346B2 (en) 1987-02-04
CA1154172A (en) 1983-09-20
GB2069787A (en) 1981-08-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990203