GB2066566B - Amorphous diode and rom or eeprom device utilising same - Google Patents
Amorphous diode and rom or eeprom device utilising sameInfo
- Publication number
- GB2066566B GB2066566B GB8039611A GB8039611A GB2066566B GB 2066566 B GB2066566 B GB 2066566B GB 8039611 A GB8039611 A GB 8039611A GB 8039611 A GB8039611 A GB 8039611A GB 2066566 B GB2066566 B GB 2066566B
- Authority
- GB
- United Kingdom
- Prior art keywords
- rom
- eeprom device
- device utilising
- utilising same
- amorphous diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/35—Material including carbon, e.g. graphite, grapheme
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10301179A | 1979-12-13 | 1979-12-13 | |
US20827480A | 1980-11-19 | 1980-11-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2066566A GB2066566A (en) | 1981-07-08 |
GB2066566B true GB2066566B (en) | 1984-07-04 |
Family
ID=26799984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8039611A Expired GB2066566B (en) | 1979-12-13 | 1980-12-10 | Amorphous diode and rom or eeprom device utilising same |
Country Status (15)
Country | Link |
---|---|
JP (3) | JPS56115571A (en) |
KR (2) | KR830004681A (en) |
AU (1) | AU543740B2 (en) |
BE (1) | BE886631A (en) |
CA (3) | CA1155239A (en) |
DE (1) | DE3046701A1 (en) |
FR (1) | FR2475295A1 (en) |
GB (1) | GB2066566B (en) |
IL (1) | IL61671A (en) |
IT (1) | IT1194001B (en) |
MX (1) | MX150800A (en) |
NL (1) | NL8006771A (en) |
SE (1) | SE8008739L (en) |
SG (1) | SG72784G (en) |
ZA (3) | ZA807762B (en) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3277665D1 (en) * | 1981-08-07 | 1987-12-17 | British Petroleum Co Plc | Non-volatile electrically programmable memory device |
JPS5867066A (en) * | 1981-10-16 | 1983-04-21 | Semiconductor Energy Lab Co Ltd | Insulating gate type field-effect semiconductor device |
JPS59501988A (en) * | 1982-11-11 | 1984-11-29 | ハイドリル カンパニ− | Safety valve device and method |
US4545111A (en) * | 1983-01-18 | 1985-10-08 | Energy Conversion Devices, Inc. | Method for making, parallel preprogramming or field programming of electronic matrix arrays |
AU562641B2 (en) * | 1983-01-18 | 1987-06-18 | Energy Conversion Devices Inc. | Electronic matrix array |
US4677742A (en) * | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
US4569121A (en) * | 1983-03-07 | 1986-02-11 | Signetics Corporation | Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer |
US4569120A (en) * | 1983-03-07 | 1986-02-11 | Signetics Corporation | Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation |
JPS60153552U (en) * | 1984-03-24 | 1985-10-12 | 沖電気工業株式会社 | PN junction semiconductor device |
US4667217A (en) * | 1985-04-19 | 1987-05-19 | Ncr Corporation | Two bit vertically/horizontally integrated memory cell |
US4914055A (en) * | 1989-08-24 | 1990-04-03 | Advanced Micro Devices, Inc. | Semiconductor antifuse structure and method |
GB9113795D0 (en) * | 1991-06-26 | 1991-08-14 | Philips Electronic Associated | Thin-film rom devices and their manufacture |
GB9117680D0 (en) * | 1991-08-16 | 1991-10-02 | Philips Electronic Associated | Electronic matrix array devices |
JP3501416B2 (en) * | 1994-04-28 | 2004-03-02 | 忠弘 大見 | Semiconductor device |
JP2500484B2 (en) * | 1994-07-11 | 1996-05-29 | ソニー株式会社 | Thin film transistor manufacturing method |
US6646912B2 (en) * | 2001-06-05 | 2003-11-11 | Hewlett-Packard Development Company, Lp. | Non-volatile memory |
US6599796B2 (en) * | 2001-06-29 | 2003-07-29 | Hewlett-Packard Development Company, L.P. | Apparatus and fabrication process to reduce crosstalk in pirm memory array |
JP3948292B2 (en) | 2002-02-01 | 2007-07-25 | 株式会社日立製作所 | Semiconductor memory device and manufacturing method thereof |
WO2004027877A1 (en) * | 2002-09-19 | 2004-04-01 | Sharp Kabushiki Kaisha | Variable resistance functional body and its manufacturing method |
JP4541651B2 (en) * | 2003-03-13 | 2010-09-08 | シャープ株式会社 | Resistance change function body, memory, manufacturing method thereof, semiconductor device, and electronic apparatus |
JP4634014B2 (en) * | 2003-05-22 | 2011-02-16 | 株式会社日立製作所 | Semiconductor memory device |
KR100504700B1 (en) * | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | Phase random access memory with high dencity |
JP4767653B2 (en) * | 2004-10-22 | 2011-09-07 | 株式会社半導体エネルギー研究所 | Semiconductor device and wireless chip |
CN101044624A (en) | 2004-10-22 | 2007-09-26 | 株式会社半导体能源研究所 | Semiconductor device |
JP2008118108A (en) * | 2006-08-25 | 2008-05-22 | Qimonda Ag | Information storage element and method of manufacturing the same |
JP2007019559A (en) * | 2006-10-23 | 2007-01-25 | Hitachi Ltd | Semiconductor storage device and its manufacturing method |
US7915603B2 (en) * | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
CN101689603B (en) * | 2007-06-20 | 2015-08-12 | 台湾积体电路制造股份有限公司 | Electronic component and manufacture method thereof |
US9716225B2 (en) | 2014-09-03 | 2017-07-25 | Micron Technology, Inc. | Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51122382A (en) * | 1975-04-18 | 1976-10-26 | Fujitsu Ltd | Semiconductor device |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
JPS5819138B2 (en) * | 1977-01-11 | 1983-04-16 | 日本電信電話株式会社 | semiconductor equipment |
JPS53144274A (en) * | 1977-05-23 | 1978-12-15 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS5457879A (en) * | 1977-10-15 | 1979-05-10 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor |
US4177475A (en) * | 1977-10-31 | 1979-12-04 | Burroughs Corporation | High temperature amorphous memory device for an electrically alterable read-only memory |
DE2909197A1 (en) * | 1978-03-20 | 1979-10-04 | Texas Instruments Inc | PROCESS FOR PRODUCING A FIXED MEMORY AND FIXED STORAGE MATRIX |
-
1980
- 1980-12-09 IL IL61671A patent/IL61671A/en unknown
- 1980-12-10 GB GB8039611A patent/GB2066566B/en not_active Expired
- 1980-12-10 MX MX185133A patent/MX150800A/en unknown
- 1980-12-11 ZA ZA00807762A patent/ZA807762B/en unknown
- 1980-12-11 DE DE19803046701 patent/DE3046701A1/en not_active Withdrawn
- 1980-12-11 JP JP17520080A patent/JPS56115571A/en active Pending
- 1980-12-11 ZA ZA00807761A patent/ZA807761B/en unknown
- 1980-12-11 ZA ZA00807763A patent/ZA807763B/en unknown
- 1980-12-11 JP JP17519980A patent/JPS56100464A/en active Pending
- 1980-12-12 FR FR8026401A patent/FR2475295A1/en active Pending
- 1980-12-12 NL NL8006771A patent/NL8006771A/en not_active Application Discontinuation
- 1980-12-12 JP JP17568280A patent/JPS56103474A/en active Pending
- 1980-12-12 KR KR1019800004729A patent/KR830004681A/en unknown
- 1980-12-12 CA CA000366713A patent/CA1155239A/en not_active Expired
- 1980-12-12 KR KR8004727A patent/KR850001045B1/en active
- 1980-12-12 AU AU65315/80A patent/AU543740B2/en not_active Withdrawn - After Issue
- 1980-12-12 IT IT26643/80A patent/IT1194001B/en active
- 1980-12-12 SE SE8008739A patent/SE8008739L/en not_active Application Discontinuation
- 1980-12-12 BE BE0/203148A patent/BE886631A/en not_active IP Right Cessation
-
1983
- 1983-06-14 CA CA000430399A patent/CA1162327A/en not_active Expired
- 1983-06-14 CA CA000430398A patent/CA1161970A/en not_active Expired
-
1984
- 1984-10-17 SG SG727/84A patent/SG72784G/en unknown
Also Published As
Publication number | Publication date |
---|---|
BE886631A (en) | 1981-04-01 |
ZA807762B (en) | 1981-12-30 |
NL8006771A (en) | 1981-07-16 |
KR830004681A (en) | 1983-07-16 |
DE3046701A1 (en) | 1981-10-15 |
IL61671A0 (en) | 1981-01-30 |
IL61671A (en) | 1984-04-30 |
CA1155239A (en) | 1983-10-11 |
SG72784G (en) | 1985-03-29 |
GB2066566A (en) | 1981-07-08 |
KR850001045B1 (en) | 1985-07-19 |
JPS56115571A (en) | 1981-09-10 |
FR2475295A1 (en) | 1981-08-07 |
CA1161970A (en) | 1984-02-07 |
ZA807761B (en) | 1981-12-30 |
CA1162327A (en) | 1984-02-14 |
SE8008739L (en) | 1981-06-14 |
ZA807763B (en) | 1981-12-30 |
JPS56103474A (en) | 1981-08-18 |
AU6531580A (en) | 1981-06-18 |
KR830004679A (en) | 1983-07-16 |
IT1194001B (en) | 1988-08-31 |
JPS56100464A (en) | 1981-08-12 |
IT8026643A0 (en) | 1980-12-12 |
AU543740B2 (en) | 1985-05-02 |
MX150800A (en) | 1984-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |