GB1491239A - Growing monocrystalline rods from a melt - Google Patents
Growing monocrystalline rods from a meltInfo
- Publication number
- GB1491239A GB1491239A GB5356974A GB5356974A GB1491239A GB 1491239 A GB1491239 A GB 1491239A GB 5356974 A GB5356974 A GB 5356974A GB 5356974 A GB5356974 A GB 5356974A GB 1491239 A GB1491239 A GB 1491239A
- Authority
- GB
- United Kingdom
- Prior art keywords
- temp
- melt
- furnace
- rod
- rods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1491239 Growing monocrystalline rods PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 11 Dec 1974 [14 Dec 1973] 53569/74 Heading B1S In a process of growing monocrystalline semiconductor rods by passing a melt thereof horizontally through successive temp, zones, the longitudinal temp, gradient in the cooling zone following the crystallization zone is progressively reduced during the passage of the rod therethrough. As shown in Fig. 5 a monocrystalline rod of GaAs is prepared by passing a SiO 2 boat containing molten GaAs through a tubular chamber 13 surrounded by a furnace composed of heating segments 15- 20 which provide the temp. profile shown in the graph. The solidification front 21 of the melt 23 is convex (9) [Fig. 2 (not shown)] in the direction of arrow 14 and subtends an angle α with the vertical of 5-15‹ [Fig. 3 (not shown)]. As the solidified rod 22 passes through the cooling zone controlled by segments 18 of the furnace the temp. gradient, which is uniform throughout the segment, is reduced linearly from 10 C deg/cm (represented by the section EF of the graph) to 5 C deg/cm (represented by section EF' thereof). The rate of relative movement between the boat and furnace is 1 cm/hr.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7344748A FR2320773A1 (en) | 1973-12-14 | 1973-12-14 | MONOCRYSTALLINE INGOTS MANUFACTURING PROCESS |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1491239A true GB1491239A (en) | 1977-11-09 |
Family
ID=9129227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5356974A Expired GB1491239A (en) | 1973-12-14 | 1974-12-11 | Growing monocrystalline rods from a melt |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS546034B2 (en) |
BE (1) | BE823290A (en) |
CH (1) | CH593099A5 (en) |
DE (1) | DE2458026C2 (en) |
FR (1) | FR2320773A1 (en) |
GB (1) | GB1491239A (en) |
IT (1) | IT1026995B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2097695B (en) * | 1981-03-24 | 1984-08-22 | Mitsubishi Monsanto Chem | Method for producing a single crystal |
US4853066A (en) * | 1986-10-31 | 1989-08-01 | Furukawa Electric Co., Ltd. | Method for growing compound semiconductor crystal |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3242015A (en) * | 1963-09-24 | 1966-03-22 | Monsanto Co | Apparatus and method for producing single crystal structures |
-
1973
- 1973-12-14 FR FR7344748A patent/FR2320773A1/en active Granted
-
1974
- 1974-12-07 DE DE19742458026 patent/DE2458026C2/en not_active Expired
- 1974-12-11 GB GB5356974A patent/GB1491239A/en not_active Expired
- 1974-12-11 CH CH1649474A patent/CH593099A5/xx not_active IP Right Cessation
- 1974-12-11 IT IT3044574A patent/IT1026995B/en active
- 1974-12-11 JP JP14166674A patent/JPS546034B2/ja not_active Expired
- 1974-12-12 BE BE151454A patent/BE823290A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPS5092868A (en) | 1975-07-24 |
DE2458026A1 (en) | 1975-07-03 |
FR2320773A1 (en) | 1977-03-11 |
IT1026995B (en) | 1978-10-20 |
CH593099A5 (en) | 1977-11-30 |
DE2458026C2 (en) | 1981-10-08 |
JPS546034B2 (en) | 1979-03-23 |
FR2320773B1 (en) | 1978-04-14 |
BE823290A (en) | 1975-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |