GB1383708A - Radio frequency semiconductor device - Google Patents
Radio frequency semiconductor deviceInfo
- Publication number
- GB1383708A GB1383708A GB3953872A GB3953872A GB1383708A GB 1383708 A GB1383708 A GB 1383708A GB 3953872 A GB3953872 A GB 3953872A GB 3953872 A GB3953872 A GB 3953872A GB 1383708 A GB1383708 A GB 1383708A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- grid
- highly conductive
- base
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
1383708 Semi-conductor devices RCA CORPORATION 24 Aug 1972 [1 Sept 1971] 39538/72 Heading H1K A semi-conductor device, e.g. an RF overlay transistor, comprises a semi-conductor body having a first region of first conductivity type and a second region of second. conductivity type adjacent the first region and extending to the body surface, a highly conductive grid-like third region formed of second conductivity type or intermetallic material extending into the second region from the surface and a highly resistive second conductivity type region disposed between, and in contact with, both the first region and the highly conductive third region. As shown in the Si body 32, the first region of the transistor forms the collector and comprises highly conductive (N<+>) substrate 38 and highly resistive (N-) region 40, and the second region is formed by P-type base region 42. A number of emitter segments 44 extend into the base region 42, and the third region is a highly conductive (P<+> as shown) grid 48 surrounding each emitter segment 44 which extends through base region 42 and into collector region 40. Extending between the grid 48 and the collector region 40 is a highly resistive P- grid 50, which is more resistive than both the base region 42 and the grid 48 and which forms a high-low junction with the grid 48. Layer thicknesses are given in the example. In an alternative embodiment, Fig. 3 (not shown), the highly conductive grid extending into the base region is formed of an intermetallic material such as platinum silicide or palladium silicide. The arrangement reduces the number of "shorts" between the highly conductive grid and the base-collector junction and gives a lower and more. linear output capacitance.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17681171A | 1971-09-01 | 1971-09-01 | |
| US17694771A | 1971-09-01 | 1971-09-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1383708A true GB1383708A (en) | 1974-02-12 |
Family
ID=26872623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3953872A Expired GB1383708A (en) | 1971-09-01 | 1972-08-24 | Radio frequency semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE787619A (en) |
| DE (1) | DE2241305A1 (en) |
| FR (1) | FR2150969B1 (en) |
| GB (1) | GB1383708A (en) |
| IT (1) | IT964087B (en) |
| NL (1) | NL7211875A (en) |
| SE (1) | SE377230B (en) |
-
1972
- 1972-08-16 BE BE787619A patent/BE787619A/en unknown
- 1972-08-18 IT IT2830672A patent/IT964087B/en active
- 1972-08-23 DE DE19722241305 patent/DE2241305A1/en active Pending
- 1972-08-24 GB GB3953872A patent/GB1383708A/en not_active Expired
- 1972-08-25 SE SE1103972A patent/SE377230B/xx unknown
- 1972-08-30 FR FR7230752A patent/FR2150969B1/fr not_active Expired
- 1972-08-31 NL NL7211875A patent/NL7211875A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2150969A1 (en) | 1973-04-13 |
| NL7211875A (en) | 1973-03-05 |
| FR2150969B1 (en) | 1977-12-23 |
| BE787619A (en) | 1972-12-18 |
| IT964087B (en) | 1974-01-21 |
| SE377230B (en) | 1975-06-23 |
| DE2241305A1 (en) | 1973-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |