GB1362852A - High frequency planar transistor employing highly resistive guard ring - Google Patents

High frequency planar transistor employing highly resistive guard ring

Info

Publication number
GB1362852A
GB1362852A GB4304971A GB4304971A GB1362852A GB 1362852 A GB1362852 A GB 1362852A GB 4304971 A GB4304971 A GB 4304971A GB 4304971 A GB4304971 A GB 4304971A GB 1362852 A GB1362852 A GB 1362852A
Authority
GB
United Kingdom
Prior art keywords
diffusion
base
high frequency
guard ring
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4304971A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1362852A publication Critical patent/GB1362852A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

1362852 Transistors RCA CORPORATION 15 Sept 1971 [23 Dec 1970] 43049/71 Heading H1K The breakdown voltage of the collector-base junction of a transistor is raised by the provision of a high resistivity diffusion 24 at the periphery of the base zone 22. This diffusion, which forms an extension of the base region, extends to at least 75% of the depth of the plane portion of the main junction and may extend beyond the plane portion to reach a maximum depth of 50% of the thickness of the underlying portion of the higher resistivity layer 13 of the collector 12. In a variant transistor (of overlay type) those portions of the base which each contain a separate emitter diffusion are surrounded by a grid form part of higher conductivity and the high resistivity diffusion is provided at the outer periphery of the high conductivity grid. In both embodiments the base electrode contacts the high resistivity diffusion and the contiguous part of the main base region or high conductivity grid.
GB4304971A 1970-12-23 1971-09-15 High frequency planar transistor employing highly resistive guard ring Expired GB1362852A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10100170A 1970-12-23 1970-12-23

Publications (1)

Publication Number Publication Date
GB1362852A true GB1362852A (en) 1974-08-07

Family

ID=22282615

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4304971A Expired GB1362852A (en) 1970-12-23 1971-09-15 High frequency planar transistor employing highly resistive guard ring

Country Status (8)

Country Link
AU (1) AU463787B2 (en)
BE (1) BE772640A (en)
CA (1) CA932072A (en)
DE (1) DE2147009A1 (en)
FR (1) FR2118889B1 (en)
GB (1) GB1362852A (en)
NL (1) NL7111842A (en)
SE (1) SE376688B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2554276A1 (en) * 1983-10-31 1985-05-03 Burr Brown Corp REFERENCE DIODE FOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
GB2163597A (en) * 1984-08-21 1986-02-26 Ates Componenti Elettron Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage
GB2240427A (en) * 1990-01-25 1991-07-31 Nissan Motor Guard rings for semiconductor devices

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3832750A1 (en) * 1988-09-27 1990-03-29 Asea Brown Boveri PERFORMANCE SEMICONDUCTOR COMPONENT
DE3832732A1 (en) * 1988-09-27 1990-03-29 Asea Brown Boveri PERFORMANCE SEMICONDUCTOR DIODE

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153495A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2554276A1 (en) * 1983-10-31 1985-05-03 Burr Brown Corp REFERENCE DIODE FOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
GB2163597A (en) * 1984-08-21 1986-02-26 Ates Componenti Elettron Improvements in or relating to manufacture of semiconductor devices of high breakdown voltage
GB2240427A (en) * 1990-01-25 1991-07-31 Nissan Motor Guard rings for semiconductor devices
US5184204A (en) * 1990-01-25 1993-02-02 Nissan Motor Co., Ltd. Semiconductor device with high surge endurance
GB2240427B (en) * 1990-01-25 1993-11-24 Nissan Motor Semiconductor device with high surge endurance

Also Published As

Publication number Publication date
SE376688B (en) 1975-06-02
CA932072A (en) 1973-08-14
AU463787B2 (en) 1975-08-07
AU3379071A (en) 1973-03-29
NL7111842A (en) 1972-06-27
DE2147009A1 (en) 1972-07-13
BE772640A (en) 1972-01-17
FR2118889A1 (en) 1972-08-04
FR2118889B1 (en) 1977-04-22

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees