GB1379011A - Method of manufacturing semiconductor devices - Google Patents
Method of manufacturing semiconductor devicesInfo
- Publication number
- GB1379011A GB1379011A GB2009073A GB2009073A GB1379011A GB 1379011 A GB1379011 A GB 1379011A GB 2009073 A GB2009073 A GB 2009073A GB 2009073 A GB2009073 A GB 2009073A GB 1379011 A GB1379011 A GB 1379011A
- Authority
- GB
- United Kingdom
- Prior art keywords
- platinum
- wafer
- diffused
- nickel
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 6
- 229910052697 platinum Inorganic materials 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052759 nickel Inorganic materials 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemically Coating (AREA)
Abstract
1379011 Semi-conductor devices MATSUSHITA ELECTRONICS CORP 27 April 1973 [2 May 1972] 20090/73 Heading H1K The manufacture of a semi-conductor device comprises coating one surface of a silicon body containing at least one PN junction with platinum, heating to adhere it to the silicon, plating nickel on the platinum and then heating to diffuse the platinum into the body. As described phosphorus is first diffused into opposed faces of an N type silicon wafer, residual oxide removed, the diffused layer lapped from one face and boron diffused into the opposite face to form a junction. After clearing away oxide the wafer is dipped in an aqueous solution of chloroplatinic acid and hydrofluoric acid to deposit the platinum and then heated at 700‹ C. for 5 to 10 minutes in an inert atmosphere. Electroless nickel is then deposited and the wafer reheated for 10-60 minutes at 800- 900‹ C. in inert gas. This improves the adhesion of the nickel which constitutes the ohmic contacts to the wafer and by reducing the carrier lifetime improves the switching characteristics of the device.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4414172A JPS5745061B2 (en) | 1972-05-02 | 1972-05-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1379011A true GB1379011A (en) | 1975-01-02 |
Family
ID=12683347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2009073A Expired GB1379011A (en) | 1972-05-02 | 1973-04-27 | Method of manufacturing semiconductor devices |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5745061B2 (en) |
CA (1) | CA980918A (en) |
DE (1) | DE2321390C3 (en) |
FR (1) | FR2183111B1 (en) |
GB (1) | GB1379011A (en) |
IT (1) | IT988158B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS591667A (en) * | 1982-05-20 | 1984-01-07 | ゼネラル・エレクトリツク・カンパニイ | Platinum non-electrolytic plating process for silicon |
JPS60182010A (en) * | 1984-02-29 | 1985-09-17 | Canon Electronics Inc | Head device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL241982A (en) * | 1958-08-13 | 1900-01-01 | ||
NL134170C (en) * | 1963-12-17 | 1900-01-01 | ||
DE1213921B (en) * | 1964-08-25 | 1966-04-07 | Bosch Gmbh Robert | Method for manufacturing a semiconductor device |
DE1283970B (en) * | 1966-03-19 | 1968-11-28 | Siemens Ag | Metallic contact on a semiconductor component |
US3599054A (en) * | 1968-11-22 | 1971-08-10 | Bell Telephone Labor Inc | Barrier layer devices and methods for their manufacture |
US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
-
1972
- 1972-05-02 JP JP4414172A patent/JPS5745061B2/ja not_active Expired
-
1973
- 1973-04-27 FR FR7315568A patent/FR2183111B1/fr not_active Expired
- 1973-04-27 DE DE19732321390 patent/DE2321390C3/en not_active Expired
- 1973-04-27 GB GB2009073A patent/GB1379011A/en not_active Expired
- 1973-05-01 CA CA170,129A patent/CA980918A/en not_active Expired
- 1973-05-02 IT IT4975573A patent/IT988158B/en active
Also Published As
Publication number | Publication date |
---|---|
IT988158B (en) | 1975-04-10 |
DE2321390B2 (en) | 1976-10-28 |
DE2321390A1 (en) | 1973-11-15 |
CA980918A (en) | 1975-12-30 |
FR2183111B1 (en) | 1976-11-12 |
JPS5745061B2 (en) | 1982-09-25 |
DE2321390C3 (en) | 1982-07-08 |
FR2183111A1 (en) | 1973-12-14 |
JPS495575A (en) | 1974-01-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19930426 |