GB1324972A - Semiconductor integrated circuit drive - Google Patents
Semiconductor integrated circuit driveInfo
- Publication number
- GB1324972A GB1324972A GB194171A GB194171A GB1324972A GB 1324972 A GB1324972 A GB 1324972A GB 194171 A GB194171 A GB 194171A GB 194171 A GB194171 A GB 194171A GB 1324972 A GB1324972 A GB 1324972A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- epitaxial layer
- substrate
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002955 isolation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000007423 decrease Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
1324972 Semi-conductive devices RCA CORPORATION 14 Jan 1971 [19 Jan 1970] 1941/71 Heading H1K An integrated circuit including an NPN and a PNP transistor comprises a P-type substrate 12 on which is an N-type epitaxial layer 16, an N + type first region 30 adjacent to the substrate, a P-type second region 32 between this first region and the epitaxial layer and contacted by a P-type contact region 34, and a P-type region 36 at the surface of the epitaxial layer spaced from the second region 32 and forming a PNP transistor 22. The P-type second region 32 contains doping impurities in a concentration which decreases in the direction away from the substrate. In a further embodiment, Fig. 6 (not shown), the P+ type contact region has a frame-like configuration surrounding the region 36 to improve isolation. Isolation between transistors is provided by P+ type isolation regions 20 extending through the epitaxial layer. The NPN transistor 21 adjacent to the PNP transistor 22 is of conventional form.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US373170A | 1970-01-19 | 1970-01-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1324972A true GB1324972A (en) | 1973-07-25 |
Family
ID=21707308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB194171A Expired GB1324972A (en) | 1970-01-19 | 1971-01-14 | Semiconductor integrated circuit drive |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE761731A (en) |
CA (1) | CA928863A (en) |
DE (1) | DE2101966A1 (en) |
FR (1) | FR2080915B1 (en) |
GB (1) | GB1324972A (en) |
NL (1) | NL7100631A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3302025A1 (en) * | 1983-01-22 | 1984-07-26 | Telefunken electronic GmbH, 6000 Frankfurt | Process for producing an epitaxial-base transistor |
JPS59165455A (en) * | 1983-03-10 | 1984-09-18 | Toshiba Corp | Semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1541490A (en) * | 1966-10-21 | 1968-10-04 | Philips Nv | Semiconductor device and method for its manufacture |
-
1970
- 1970-11-27 CA CA099388A patent/CA928863A/en not_active Expired
-
1971
- 1971-01-14 GB GB194171A patent/GB1324972A/en not_active Expired
- 1971-01-16 DE DE19712101966 patent/DE2101966A1/en active Pending
- 1971-01-18 FR FR7101438A patent/FR2080915B1/fr not_active Expired
- 1971-01-18 BE BE761731A patent/BE761731A/en unknown
- 1971-01-18 NL NL7100631A patent/NL7100631A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2080915A1 (en) | 1971-11-26 |
FR2080915B1 (en) | 1977-01-28 |
CA928863A (en) | 1973-06-19 |
BE761731A (en) | 1971-07-01 |
DE2101966A1 (en) | 1971-09-23 |
NL7100631A (en) | 1971-07-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |