GB1316490A - Electroluminescent devices - Google Patents
Electroluminescent devicesInfo
- Publication number
- GB1316490A GB1316490A GB1316490DA GB1316490A GB 1316490 A GB1316490 A GB 1316490A GB 1316490D A GB1316490D A GB 1316490DA GB 1316490 A GB1316490 A GB 1316490A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- atoms
- diffused
- concentration
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 abstract 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract 3
- 229910005540 GaP Inorganic materials 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
1316490 Semi-conductor devices FERRANTI Ltd 13 Dec 1971 [17 Dec 1970] 60330/70 Heading H1K [Also in Division C4] A method of manufacturing electroluminescent devices with light emitting pn-junctions 16 comprises depositing an N-type epitaxial layer 12 of gallium phosphide from the liquid phase on to a substrate 11, the layer 12 containing nitrogen or a material having the same electronic nitrogen in the layer, and forming regions 15 of p-type in the layer 12 by diffusion via apertures 14 in an insulating layer 13. The impurity concentration of nitrogen may be 10<SP>16</SP> to 10<SP>19</SP> atoms/cm.<SP>3</SP>, preferably 5 Î 10<SP>17</SP> to 5 Î 10<SP>18</SP> atoms/cc., and the layer 12 may include as an n-type dopant sulphur to a concentration of 10<SP>16</SP> to 5 Î 10<SP>17</SP> atoms/cm.<SP>3</SP>, preferably 5 + 10<SP>16</SP> to 10<SP>17</SP> atoms/cc., or tellurium or silicon. The diffused impurity may be zinc and be diffused from the vapour phase at 650‹ C. to a concentration of 10<SP>18</SP> to 10<SP>19</SP> atoms/cc. Alternatively the zinc may be diffused from a surface layer. Prior to formation of the insulating layer 13, which may be of silicon oxide-silicon nitride-silicon oxide provided by sputtering, the layer 12 may be lapped. The substrate 11 may be of gallium phosphide.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB6033070 | 1970-12-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1316490A true GB1316490A (en) | 1973-05-09 |
Family
ID=10485438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1316490D Expired GB1316490A (en) | 1970-12-17 | 1970-12-17 | Electroluminescent devices |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2118493A5 (en) |
GB (1) | GB1316490A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2558757A1 (en) * | 1975-01-07 | 1976-07-08 | Philips Nv | PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS |
-
1970
- 1970-12-17 GB GB1316490D patent/GB1316490A/en not_active Expired
-
1971
- 1971-12-07 FR FR7143898A patent/FR2118493A5/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2558757A1 (en) * | 1975-01-07 | 1976-07-08 | Philips Nv | PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS |
Also Published As
Publication number | Publication date |
---|---|
FR2118493A5 (en) | 1972-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1221590A (en) | Improvements in or relating to semiconductor devices | |
GB1359308A (en) | Semiconductor luminescent devices and methods of making them | |
GB1320043A (en) | Gallium phosphide electroluminescent light sources | |
US3549434A (en) | Low resisitivity group iib-vib compounds and method of formation | |
US3178798A (en) | Vapor deposition process wherein the vapor contains both donor and acceptor impurities | |
GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
JPS645070A (en) | Vertical insulated gate field effect transistor | |
GB1173162A (en) | Injection-Luminescent Diodes | |
GB1316490A (en) | Electroluminescent devices | |
GB1357650A (en) | Methods of manufacturing semiconductor devices | |
GB1108774A (en) | Transistors | |
US3530015A (en) | Method of producing gallium arsenide devices | |
US3488542A (en) | Light emitting heterojunction semiconductor devices | |
GB1098564A (en) | A method for producing gallium arsenide devices | |
GB1427484A (en) | Method of manufacturing a green light-emitting gallium phosphide device | |
GB1448606A (en) | Semiconductor luminescence diodes | |
GB1363524A (en) | Diffusion of impurities into a substrate | |
GB1215557A (en) | A semiconductor photosensitive device | |
GB1282635A (en) | Improvements in or relating to semiconductor devices made of gallium arsenide | |
GB1477524A (en) | Red light-emitting gallium phosphide device | |
GB1533400A (en) | Electroluminescent diode manufacture | |
JPS55162258A (en) | Semiconductor memory device | |
GB1313252A (en) | Semiconductor device and method for making the same | |
GB1313891A (en) | Methods of manufacturing semiconductor devices | |
ES380358A1 (en) | Semiconductor rectifying junction device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |