GB1215557A - A semiconductor photosensitive device - Google Patents

A semiconductor photosensitive device

Info

Publication number
GB1215557A
GB1215557A GB3829469A GB3829469A GB1215557A GB 1215557 A GB1215557 A GB 1215557A GB 3829469 A GB3829469 A GB 3829469A GB 3829469 A GB3829469 A GB 3829469A GB 1215557 A GB1215557 A GB 1215557A
Authority
GB
United Kingdom
Prior art keywords
type
july
semi
low impurity
photosensitive device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3829469A
Inventor
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB1215557A publication Critical patent/GB1215557A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,215,557. Semi-conductor devices. NIPPON ELECTRIC CO. Ltd. 30 July, 1969 [30 July, 1968], No. 38294/69. Heading H1K. The dimensions of a P<SP>+</SP>PNN<SP>+</SP> photosensitive device are selected so that when reverse biased at its reverse breakdown voltage the depletion layers nearly fill the P and N type regions. As shown, Fig. 2, an avalanche-type photodiode comprises an N type epitaxial layer 3 doped with As grown on an N type Si substrate 4, and having a P type layer 2 and a P<SP>+</SP> type layer 1 formed by diffusion of Ga and B respectively. The P and N type regions have relatively low impurity concentrations so that a junction with a low impurity concentration gradient is obtained. The device has uniform avalanche properties over the junction area without reduction of the internal quantum efficiency or increase in the spreading resistance. Design equations are given. The semi-conductor material may also be Ge, GaAs, GaP, or InSb.
GB3829469A 1968-07-30 1969-07-30 A semiconductor photosensitive device Expired GB1215557A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5351168A JPS5514549B1 (en) 1968-07-30 1968-07-30

Publications (1)

Publication Number Publication Date
GB1215557A true GB1215557A (en) 1970-12-09

Family

ID=12944825

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3829469A Expired GB1215557A (en) 1968-07-30 1969-07-30 A semiconductor photosensitive device

Country Status (2)

Country Link
JP (1) JPS5514549B1 (en)
GB (1) GB1215557A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000374A (en) * 1977-06-10 1979-01-04 Hitachi Ltd Light emitting semiconductor device
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
EP0571142A1 (en) * 1992-05-18 1993-11-24 General Electric Company Platinum doped silicon avalanche photodiode
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US5670383A (en) * 1994-04-04 1997-09-23 General Electric Company Method for fabrication of deep-diffused avalanche photodiode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170550U (en) * 1982-05-10 1983-11-14 ホーチキ株式会社 photoelectric smoke detector

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000374A (en) * 1977-06-10 1979-01-04 Hitachi Ltd Light emitting semiconductor device
GB2000374B (en) * 1977-06-10 1982-02-10 Hitachi Ltd A light emitting semiconductor device
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
GB2000373B (en) * 1977-06-27 1982-04-07 Thomson Csf A diode capable of alternately functioning as an emitter and detector of light of the same wavelength
EP0571142A1 (en) * 1992-05-18 1993-11-24 General Electric Company Platinum doped silicon avalanche photodiode
US5670383A (en) * 1994-04-04 1997-09-23 General Electric Company Method for fabrication of deep-diffused avalanche photodiode
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US5500376A (en) * 1994-04-29 1996-03-19 General Electric Company Method for fabricating planar avalanche photodiode array

Also Published As

Publication number Publication date
JPS5514549B1 (en) 1980-04-17

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