GB1316406A - Method of producing homogeneous ingots of metallic alloy - Google Patents

Method of producing homogeneous ingots of metallic alloy

Info

Publication number
GB1316406A
GB1316406A GB2126371A GB2126371A GB1316406A GB 1316406 A GB1316406 A GB 1316406A GB 2126371 A GB2126371 A GB 2126371A GB 2126371 A GB2126371 A GB 2126371A GB 1316406 A GB1316406 A GB 1316406A
Authority
GB
United Kingdom
Prior art keywords
ampoule
alloy
heat shield
heat
maintaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2126371A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1316406A publication Critical patent/GB1316406A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1316406 Casting processes TEXAS INSTRUMENTS Inc 19 April 1971 [16 Feb 1970] 21263/71 Heading B3F [Also in Division C7] An ingot of an alloy containing a component of relatively high vapour pressure compared with the other components of the alloy is prepared by heating the components together to form a homogenous liquid mixture, in a sealed chamber containing a vapour space and quenching the alloy from a liquid to a solid while maintaining a high vapour pressure in the vapour space. In the examples, Hg-Cd-Te alloy is prepared by melting appropriate quantities of the component elements in a quartz ampoule 16 which has been etched, rinsed with deionized and distilled water and vacuum fired. The component elements are loaded into the ampoule in a glove box filled with N 2 and before sealing with an H 2 /O 2 blowtorch the ampoule is evacuated. After heating for 24 hr. in a rocking furnace 10 at 810‹ C., the alloy is quenched by directing a stream of N 2 on the ampoule base through a tube 32 while maintaining the top ampoule end and the vapour space 20 by a refractory heat-insulating shield 22. Alternatively, the lower end of the ampoule is lowered into a quenching oil while the upper end is surrounded by a heat shield. The heat shield can include an electric heater. The heat shield may be replaced by a heat sink.
GB2126371A 1970-02-16 1971-04-19 Method of producing homogeneous ingots of metallic alloy Expired GB1316406A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1164470A 1970-02-16 1970-02-16

Publications (1)

Publication Number Publication Date
GB1316406A true GB1316406A (en) 1973-05-09

Family

ID=21751355

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2126371A Expired GB1316406A (en) 1970-02-16 1971-04-19 Method of producing homogeneous ingots of metallic alloy

Country Status (4)

Country Link
US (1) US3656944A (en)
DE (1) DE2106412A1 (en)
FR (1) FR2078647A5 (en)
GB (1) GB1316406A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849205A (en) * 1973-08-27 1974-11-19 Texas Instruments Inc Enhancement of solid state recrystallization by induced nucleation
US4011074A (en) * 1974-03-25 1977-03-08 Consortium Fur Elektrochemische Industrie Gmbh Process for preparing a homogeneous alloy
GB2051607B (en) * 1979-07-05 1983-06-29 Philips Electronic Associated Method of making monocrystalline ternary semiconductor material
IL60734A (en) * 1979-08-30 1984-03-30 Santa Barbara Res Center Production of single crystal mercury cadmium telluride
CA1197755A (en) * 1980-05-22 1985-12-10 Robert A. Lancaster Controlled directional solidification of semiconductor alloys
US4654196A (en) * 1983-08-17 1987-03-31 Commissariat A L'energie Atomique Process for producing a polycrystalline alloy
US4582683A (en) * 1984-12-03 1986-04-15 Texas Instruments Incorporated (Hg,Cd,Zn)Te crystal compositions
US9790580B1 (en) * 2013-11-18 2017-10-17 Materion Corporation Methods for making bulk metallic glasses containing metalloids

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231057A (en) * 1957-09-03
NL265338A (en) * 1960-06-03 1900-01-01
US3335084A (en) * 1964-03-16 1967-08-08 Gen Electric Method for producing homogeneous crystals of mixed semiconductive materials
US3468363A (en) * 1967-10-10 1969-09-23 Texas Instruments Inc Method of producing homogeneous ingots of mercury cadmium telluride

Also Published As

Publication number Publication date
DE2106412A1 (en) 1971-09-02
US3656944A (en) 1972-04-18
FR2078647A5 (en) 1971-11-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee