GB1311048A - Methods of treating semiconductors - Google Patents
Methods of treating semiconductorsInfo
- Publication number
- GB1311048A GB1311048A GB1375671*[A GB1375671A GB1311048A GB 1311048 A GB1311048 A GB 1311048A GB 1375671 A GB1375671 A GB 1375671A GB 1311048 A GB1311048 A GB 1311048A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- semiconductor
- alloys
- encapsulant
- boric oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1311048 Crystal pulling WESTERN ELECTRIC CO Inc 7 May 1971 [11 May 1970] 13756/71 Heading B1S [Also in Divisions Cl and H1] In the growth of a semiconductor crystal in which a liquid encapsulant is used to prevent evaporation of, or contamination of, the semiconductor material, the encapsulant is first heated with a getter material to remove impurities therefrom. The encapsulant disclosed is boric oxide, getter materials being boronpalladium or boron platinum alloys or gallium, aluminium or silicon or alloys thereof, the semiconductor material being gallium arsenide, gallium phosphide or alloys thereof. In the gettering process the boric oxide and getter material are heated to above their melting points under reduced pressure. A crystal-pulling process is illustrated, the crystal 28 and the molten semiconductor 27 being enclosed by molten boric oxide 21, the atmosphere above this being an inert gas under above atmospheric pressure by a pressure regulating means combined with the vacuum system 31.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3636770A | 1970-05-11 | 1970-05-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1311048A true GB1311048A (en) | 1973-03-21 |
Family
ID=21888223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1375671*[A Expired GB1311048A (en) | 1970-05-11 | 1971-05-07 | Methods of treating semiconductors |
Country Status (9)
Country | Link |
---|---|
US (1) | US3647389A (en) |
JP (1) | JPS5026422B1 (en) |
BE (1) | BE766750A (en) |
CA (1) | CA952413A (en) |
CH (1) | CH569514A5 (en) |
DE (1) | DE2122192C3 (en) |
FR (1) | FR2088484B1 (en) |
GB (1) | GB1311048A (en) |
IT (1) | IT942100B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4637854A (en) * | 1983-01-18 | 1987-01-20 | Agency Of Industrial Science And Technology | Method for producing GaAs single crystal |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3857679A (en) * | 1973-02-05 | 1974-12-31 | Univ Southern California | Crystal grower |
US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
JPS6024078B2 (en) * | 1977-09-05 | 1985-06-11 | 株式会社東芝 | Manufacturing equipment for Group 3-5 compound semiconductor single crystals |
US4277303A (en) * | 1978-08-07 | 1981-07-07 | The Harshaw Chemical Company | Getter for melt-grown scintillator ingot and method for growing the ingot |
US4299650A (en) * | 1979-10-12 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Minimization of strain in single crystals |
US4431476A (en) * | 1981-01-17 | 1984-02-14 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing gallium phosphide single crystals |
JPS5914440B2 (en) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | Method for doping boron into CaAs single crystal |
JPS59232995A (en) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | Cooling method of pulled up single crystal |
DE139157T1 (en) * | 1983-08-31 | 1985-11-07 | Research Development Corp. Of Japan, Tokio/Tokyo | DEVICE FOR GROWING SINGLE CRYSTALLINE DEGRADABLE CONNECTIONS. |
US4721539A (en) * | 1986-07-15 | 1988-01-26 | The United States Of America As Represented By The United States Department Of Energy | Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same |
US4824520A (en) * | 1987-03-19 | 1989-04-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Liquid encapsulated crystal growth |
US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
US5183767A (en) * | 1991-02-14 | 1993-02-02 | International Business Machines Corporation | Method for internal gettering of oxygen in iii-v compound semiconductors |
US5272373A (en) * | 1991-02-14 | 1993-12-21 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
WO2010053960A1 (en) * | 2008-11-07 | 2010-05-14 | The Regents Of The University Of California | Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals |
-
1970
- 1970-05-11 US US36367A patent/US3647389A/en not_active Expired - Lifetime
-
1971
- 1971-01-15 CA CA102,847A patent/CA952413A/en not_active Expired
- 1971-05-05 DE DE2122192A patent/DE2122192C3/en not_active Expired
- 1971-05-05 BE BE766750A patent/BE766750A/en unknown
- 1971-05-07 GB GB1375671*[A patent/GB1311048A/en not_active Expired
- 1971-05-10 FR FR7116785A patent/FR2088484B1/fr not_active Expired
- 1971-05-11 CH CH689971A patent/CH569514A5/xx not_active IP Right Cessation
- 1971-05-11 JP JP46030887A patent/JPS5026422B1/ja active Pending
- 1971-05-11 IT IT50249/71A patent/IT942100B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4637854A (en) * | 1983-01-18 | 1987-01-20 | Agency Of Industrial Science And Technology | Method for producing GaAs single crystal |
Also Published As
Publication number | Publication date |
---|---|
CA952413A (en) | 1974-08-06 |
IT942100B (en) | 1973-03-20 |
FR2088484A1 (en) | 1972-01-07 |
DE2122192C3 (en) | 1974-06-06 |
BE766750A (en) | 1971-10-01 |
FR2088484B1 (en) | 1976-04-16 |
DE2122192B2 (en) | 1973-10-18 |
JPS5026422B1 (en) | 1975-09-01 |
CH569514A5 (en) | 1975-11-28 |
DE2122192A1 (en) | 1971-11-25 |
US3647389A (en) | 1972-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |