GB1311048A - Methods of treating semiconductors - Google Patents

Methods of treating semiconductors

Info

Publication number
GB1311048A
GB1311048A GB1375671*[A GB1375671A GB1311048A GB 1311048 A GB1311048 A GB 1311048A GB 1375671 A GB1375671 A GB 1375671A GB 1311048 A GB1311048 A GB 1311048A
Authority
GB
United Kingdom
Prior art keywords
crystal
semiconductor
alloys
encapsulant
boric oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1375671*[A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1311048A publication Critical patent/GB1311048A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1311048 Crystal pulling WESTERN ELECTRIC CO Inc 7 May 1971 [11 May 1970] 13756/71 Heading B1S [Also in Divisions Cl and H1] In the growth of a semiconductor crystal in which a liquid encapsulant is used to prevent evaporation of, or contamination of, the semiconductor material, the encapsulant is first heated with a getter material to remove impurities therefrom. The encapsulant disclosed is boric oxide, getter materials being boronpalladium or boron platinum alloys or gallium, aluminium or silicon or alloys thereof, the semiconductor material being gallium arsenide, gallium phosphide or alloys thereof. In the gettering process the boric oxide and getter material are heated to above their melting points under reduced pressure. A crystal-pulling process is illustrated, the crystal 28 and the molten semiconductor 27 being enclosed by molten boric oxide 21, the atmosphere above this being an inert gas under above atmospheric pressure by a pressure regulating means combined with the vacuum system 31.
GB1375671*[A 1970-05-11 1971-05-07 Methods of treating semiconductors Expired GB1311048A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3636770A 1970-05-11 1970-05-11

Publications (1)

Publication Number Publication Date
GB1311048A true GB1311048A (en) 1973-03-21

Family

ID=21888223

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1375671*[A Expired GB1311048A (en) 1970-05-11 1971-05-07 Methods of treating semiconductors

Country Status (9)

Country Link
US (1) US3647389A (en)
JP (1) JPS5026422B1 (en)
BE (1) BE766750A (en)
CA (1) CA952413A (en)
CH (1) CH569514A5 (en)
DE (1) DE2122192C3 (en)
FR (1) FR2088484B1 (en)
GB (1) GB1311048A (en)
IT (1) IT942100B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
JPS6024078B2 (en) * 1977-09-05 1985-06-11 株式会社東芝 Manufacturing equipment for Group 3-5 compound semiconductor single crystals
US4277303A (en) * 1978-08-07 1981-07-07 The Harshaw Chemical Company Getter for melt-grown scintillator ingot and method for growing the ingot
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4431476A (en) * 1981-01-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals
JPS5914440B2 (en) * 1981-09-18 1984-04-04 住友電気工業株式会社 Method for doping boron into CaAs single crystal
JPS59232995A (en) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd Cooling method of pulled up single crystal
DE139157T1 (en) * 1983-08-31 1985-11-07 Research Development Corp. Of Japan, Tokio/Tokyo DEVICE FOR GROWING SINGLE CRYSTALLINE DEGRADABLE CONNECTIONS.
US4721539A (en) * 1986-07-15 1988-01-26 The United States Of America As Represented By The United States Department Of Energy Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
US4824520A (en) * 1987-03-19 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated crystal growth
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
US5183767A (en) * 1991-02-14 1993-02-02 International Business Machines Corporation Method for internal gettering of oxygen in iii-v compound semiconductors
US5272373A (en) * 1991-02-14 1993-12-21 International Business Machines Corporation Internal gettering of oxygen in III-V compound semiconductors
WO2010053960A1 (en) * 2008-11-07 2010-05-14 The Regents Of The University Of California Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal

Also Published As

Publication number Publication date
CA952413A (en) 1974-08-06
IT942100B (en) 1973-03-20
FR2088484A1 (en) 1972-01-07
DE2122192C3 (en) 1974-06-06
BE766750A (en) 1971-10-01
FR2088484B1 (en) 1976-04-16
DE2122192B2 (en) 1973-10-18
JPS5026422B1 (en) 1975-09-01
CH569514A5 (en) 1975-11-28
DE2122192A1 (en) 1971-11-25
US3647389A (en) 1972-03-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee