GB1287789A - Crystal pulling device - Google Patents
Crystal pulling deviceInfo
- Publication number
- GB1287789A GB1287789A GB58212/69A GB5821269A GB1287789A GB 1287789 A GB1287789 A GB 1287789A GB 58212/69 A GB58212/69 A GB 58212/69A GB 5821269 A GB5821269 A GB 5821269A GB 1287789 A GB1287789 A GB 1287789A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pulling
- temperature
- thermocouple
- constant
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1287789 Crystal-pulling. KOKUSAI DENKI KK 28 Nov 1969 [6 Dec 1968] 48212/69 Heading BIS [Also in Division G3] A silicon rod 20 is pulled from a melt contained in a rotating quartz crucible 3b and heated by a cylindrical resistance heater 4 supplied with an amount of power dependent on a signal from a temperature-sensing thermocouple 5 maintained substantially at the level of the solid/liquid interface, so as to maintain substantially constant the temperature of said interface. The heater and thermocouple may be moved down at a constant (e.g. 0.1 mm/min) or variable rate determined by calculation or practical test. Pulling may be effected in an atmosphere of argon.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8914268 | 1968-12-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1287789A true GB1287789A (en) | 1972-09-06 |
Family
ID=13962605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB58212/69A Expired GB1287789A (en) | 1968-12-06 | 1969-11-28 | Crystal pulling device |
Country Status (6)
Country | Link |
---|---|
US (1) | US3700412A (en) |
BE (1) | BE742712A (en) |
DE (1) | DE1961521C3 (en) |
FR (1) | FR2025503A1 (en) |
GB (1) | GB1287789A (en) |
NL (1) | NL6917879A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0098471A2 (en) * | 1982-07-09 | 1984-01-18 | International Business Machines Corporation | Method of growing silicon crystals by the Czochralski method |
CN112301425A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Large-argon flow crystal pulling method for large-size monocrystalline silicon rod |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7207136A (en) * | 1971-07-07 | 1973-01-09 | ||
BE790657R (en) * | 1971-10-27 | 1973-02-15 | Siemens Ag | ELECTRICAL HEATING DEVICE FOR A BAR |
GB1434527A (en) * | 1972-09-08 | 1976-05-05 | Secr Defence | Growth of crystalline material |
US5240685A (en) * | 1982-07-08 | 1993-08-31 | Zaidan Hojin Handotai Kenkyu Shinkokai | Apparatus for growing a GaAs single crystal by pulling from GaAs melt |
US5560759A (en) * | 1994-11-14 | 1996-10-01 | Lucent Technologies Inc. | Core insertion method for making optical fiber preforms and optical fibers fabricated therefrom |
US6458201B2 (en) * | 1997-08-19 | 2002-10-01 | Shin-Etsu Handotai Co., Ltd. | Apparatus for producing single crystals and method for producing single crystals |
-
1969
- 1969-11-26 US US880111A patent/US3700412A/en not_active Expired - Lifetime
- 1969-11-27 NL NL6917879A patent/NL6917879A/xx unknown
- 1969-11-28 GB GB58212/69A patent/GB1287789A/en not_active Expired
- 1969-12-03 FR FR6941715A patent/FR2025503A1/fr not_active Withdrawn
- 1969-12-05 BE BE742712D patent/BE742712A/xx unknown
- 1969-12-08 DE DE1961521A patent/DE1961521C3/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0098471A2 (en) * | 1982-07-09 | 1984-01-18 | International Business Machines Corporation | Method of growing silicon crystals by the Czochralski method |
EP0098471A3 (en) * | 1982-07-09 | 1985-05-15 | International Business Machines Corporation | Method of growing silicon crystals by the czochralski method |
CN112301425A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Large-argon flow crystal pulling method for large-size monocrystalline silicon rod |
Also Published As
Publication number | Publication date |
---|---|
DE1961521C3 (en) | 1974-03-07 |
DE1961521B2 (en) | 1972-06-15 |
BE742712A (en) | 1970-05-14 |
NL6917879A (en) | 1970-06-09 |
FR2025503A1 (en) | 1970-09-11 |
US3700412A (en) | 1972-10-24 |
DE1961521A1 (en) | 1970-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |