GB1280719A - Magnetic field detecting apparatus - Google Patents
Magnetic field detecting apparatusInfo
- Publication number
- GB1280719A GB1280719A GB5426669A GB5426669A GB1280719A GB 1280719 A GB1280719 A GB 1280719A GB 5426669 A GB5426669 A GB 5426669A GB 5426669 A GB5426669 A GB 5426669A GB 1280719 A GB1280719 A GB 1280719A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- electrodes
- type
- magnetic field
- output voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910000846 In alloy Inorganic materials 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
1280719 Semi-conductor devices SONY CORP 5 Nov 1969 [5 Nov 1968] 54266/69 Heading H1K A magnetic field detecting device comprises a semi-conductor body 2 of intrinsic, P- or N-type material having therein two P-type (or N-type) regions 4, 5 and two N-type (P-type) regions 7, 8. The regions 4, 8 carry main current electrodes 9, 12 while the regions 5, 7, which are situated on opposite sides of the main current path, are connected together via electrodes 10, 11 and connection 13. The output voltage, measured between electrodes 10 and 12, is dependent upon the magnitude and direction of an applied magnetic field, and the output voltage/field characteristic may be adjusted by placing a variable resistor either between the electrodes 9 and 10 or between the electrodes 10 and 12. The body 2 may be of Ge, Si or an intermetallic compound. In an intrinsic Ge body the P-type regions 4, 5 are formed by alloying in In/Sn alloy, the regions 7, 8 being formed from Sb/Sn alloy. The regions 5, 7 may, in a modification be situated on opposite side faces of the body 2, or all four regions may be diffused into one of the major faces. An additional connected pair of opposed electrodes (34,35), Fig. 12 (not shown), may also be provided, the output voltage being measured between the two pairs.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8083768 | 1968-11-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1280719A true GB1280719A (en) | 1972-07-05 |
Family
ID=13729481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5426669A Expired GB1280719A (en) | 1968-11-05 | 1969-11-05 | Magnetic field detecting apparatus |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA918242A (en) |
| DE (1) | DE1955410A1 (en) |
| FR (1) | FR2030587A5 (en) |
| GB (1) | GB1280719A (en) |
| NL (1) | NL6916666A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002056046A1 (en) * | 2001-01-09 | 2002-07-18 | Robert Bosch Gmbh | Device for detecting a magnetic field, magnetic field measurer and current meter |
| WO2002095433A2 (en) * | 2001-05-25 | 2002-11-28 | Robert Bosch Gmbh | Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8095268B2 (en) | 2004-10-29 | 2012-01-10 | Bose Corporation | Active suspending |
| US7983813B2 (en) | 2004-10-29 | 2011-07-19 | Bose Corporation | Active suspending |
| US7962261B2 (en) | 2007-11-12 | 2011-06-14 | Bose Corporation | Vehicle suspension |
-
1969
- 1969-11-04 CA CA066603A patent/CA918242A/en not_active Expired
- 1969-11-04 DE DE19691955410 patent/DE1955410A1/en active Pending
- 1969-11-05 NL NL6916666A patent/NL6916666A/xx unknown
- 1969-11-05 FR FR6938072A patent/FR2030587A5/fr not_active Expired
- 1969-11-05 GB GB5426669A patent/GB1280719A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002056046A1 (en) * | 2001-01-09 | 2002-07-18 | Robert Bosch Gmbh | Device for detecting a magnetic field, magnetic field measurer and current meter |
| US6861717B2 (en) | 2001-01-09 | 2005-03-01 | Robert Bosch Gmbh | Device for defecting a magnetic field, magnetic field measure and current meter |
| WO2002095433A2 (en) * | 2001-05-25 | 2002-11-28 | Robert Bosch Gmbh | Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter |
| WO2002095423A2 (en) * | 2001-05-25 | 2002-11-28 | Robert Bosch Gmbh | Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter |
| WO2002095423A3 (en) * | 2001-05-25 | 2003-04-03 | Bosch Gmbh Robert | Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter |
| WO2002095433A3 (en) * | 2001-05-25 | 2003-05-22 | Bosch Gmbh Robert | Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter |
| US7190156B2 (en) | 2001-05-25 | 2007-03-13 | Robert Bosch Gmbh | Device for measuring a B-component of a magnetic field, a magnetic field sensor and an ammeter |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6916666A (en) | 1970-05-08 |
| CA918242A (en) | 1973-01-02 |
| DE1955410A1 (en) | 1970-06-11 |
| FR2030587A5 (en) | 1970-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2736822A (en) | Hall effect apparatus | |
| GB1282251A (en) | Shielded semiconductor device | |
| GB1381035A (en) | Electrical system with current and voltage limiting-protective means | |
| GB1280719A (en) | Magnetic field detecting apparatus | |
| GB1517266A (en) | Method of compensating for the voltage coefficient of ion-implanted or diffused resistors | |
| GB871307A (en) | Transistor with double collector | |
| US2862184A (en) | Semiconductor translating device | |
| ES447767A1 (en) | High carrier velocity magnetic sensor | |
| GB1008238A (en) | Improvements in micro-microammeters | |
| US2922897A (en) | Transistor circuit | |
| GB1064251A (en) | Stress-sensing devices | |
| GB1044722A (en) | Improvements in and relating to asymmetrical conducting devices | |
| GB1306970A (en) | Semiconductor circuit | |
| JPS5740662A (en) | Circuit substrate device | |
| GB1289739A (en) | ||
| GB1246815A (en) | Marginal switching arrangement | |
| GB1234852A (en) | Improvements in or relating to semi-conductor transducers | |
| US3582658A (en) | Light scanning device utilizing piezoelectric semiconductor material | |
| GB1168255A (en) | Semiconductor Device | |
| Guseva et al. | Investigation of the Hall Effect in InSb Doped by Implantation of S Ions | |
| JPS5750386A (en) | Semiconductor storage circuit | |
| GB910050A (en) | Improvements in or relating to semiconductor devices | |
| GB948178A (en) | Narrow band notch filter | |
| Aladashvili et al. | Dependence of the 4. 2 K Piezoresistance of P-Type InSb on the Impurity Concentration | |
| CZUBATYJ | An experimental investigation of some negative differential mobility semiconductors(transport properties)[Ph. D. Thesis] |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |