GB1517266A - Method of compensating for the voltage coefficient of ion-implanted or diffused resistors - Google Patents
Method of compensating for the voltage coefficient of ion-implanted or diffused resistorsInfo
- Publication number
- GB1517266A GB1517266A GB1702477A GB1702477A GB1517266A GB 1517266 A GB1517266 A GB 1517266A GB 1702477 A GB1702477 A GB 1702477A GB 1702477 A GB1702477 A GB 1702477A GB 1517266 A GB1517266 A GB 1517266A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- resistor
- terminal
- isolated
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000010079 rubber tapping Methods 0.000 abstract 2
- 238000005513 bias potential Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Analogue/Digital Conversion (AREA)
Abstract
1517266 Semiconductor resistors INTERNATIONAL BUSINESS MACHINES CORP 25 April 1977 [13 May 1976] 17024/77 Heading H1K [Also in Division H3] In a method for reducing the voltagecoefficient of resistance (VCR) of an ionimplanted or diffused resistor region 14 provided in an isolated epitaxial region 12 of a conductivity type different from that of the resistor region, the isolated region is connected to a potential which is a predetermined function of a potential applied to one terminal of the resistor region. Preferably, the isolated region is at a potential of where V 1 , V 2 are potentials applied to respective resistor terminals 17, 18 and V 0 is the reverse bias potential across PN junctions 20, 20<SP>1</SP>. In one example, Fig. 3B (not shown) terminal 19 of the isolated region is directly connected to one of the terminals 17, 18, whereas in the example of Fig. 3D (not shown) the resistor region is provided with a centre tapping connected to the terminal 19. Another VCR reducing arrangement includes a resistor (22), Fig. 2 (not shown) in another isolated region, provided with a centre-tapping connected to the terminal 19. A digital-to-analog converter circuit and an operational amplified circuit are discolosed, which utilize the above mentioned VCR reducing arrangements.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7615001A FR2351505A1 (en) | 1976-05-13 | 1976-05-13 | PROCEDURE FOR CORRECTING THE TENSION COEFFICIENT OF SEMICONDUCTOR, IMPLANTED OR DIFFUSED RESISTORS |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1517266A true GB1517266A (en) | 1978-07-12 |
Family
ID=9173307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1702477A Expired GB1517266A (en) | 1976-05-13 | 1977-04-25 | Method of compensating for the voltage coefficient of ion-implanted or diffused resistors |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS52137988A (en) |
DE (1) | DE2720653A1 (en) |
FR (1) | FR2351505A1 (en) |
GB (1) | GB1517266A (en) |
IT (1) | IT1115304B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0017919A1 (en) * | 1979-04-16 | 1980-10-29 | Fujitsu Limited | Diffused resistor |
US4466013A (en) * | 1982-08-25 | 1984-08-14 | U.S. Philips Corporation | Tapped integrated resistor |
US5111068A (en) * | 1987-03-31 | 1992-05-05 | Kabushiki Kaisha Toshiba | Diffusion resistor circuit |
US8384157B2 (en) | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
US8723294B2 (en) | 2010-10-20 | 2014-05-13 | Asahi Kasei Microdevices Corporation | Resistance element and inverting buffer circuit |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4229753A (en) * | 1977-08-18 | 1980-10-21 | International Business Machines Corporation | Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor |
SE7900379L (en) * | 1978-01-25 | 1979-07-26 | Western Electric Co | SEMICONDUCTOR-INTEGRATED CIRCUIT |
JPS5516489A (en) * | 1978-07-24 | 1980-02-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor resistance device |
DE3009042A1 (en) * | 1979-03-19 | 1980-10-02 | Trw Inc | SEMICONDUCTOR RESISTANCE |
EP0109996B1 (en) * | 1982-11-26 | 1987-06-03 | International Business Machines Corporation | Self-biased resistor structure and application to interface circuits realization |
EP0139027B1 (en) * | 1983-10-19 | 1988-03-16 | Deutsche ITT Industries GmbH | Monolithic integrated circuit with at least one integrated resistor |
JPH0423355A (en) * | 1990-05-15 | 1992-01-27 | Hitachi Ltd | Semiconductor device |
DE4329639A1 (en) * | 1993-09-02 | 1995-03-09 | Telefunken Microelectron | Circuit arrangement with controlled pinch resistors |
DE10135169B4 (en) * | 2001-07-19 | 2004-02-19 | Robert Bosch Gmbh | Resistor arrangement and ammeter |
JP6269936B2 (en) * | 2013-12-26 | 2018-01-31 | 横河電機株式会社 | Integrated circuit |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3270258A (en) * | 1963-07-05 | 1966-08-30 | Int Rectifier Corp | Field effect transistor |
JPS515759A (en) * | 1974-07-03 | 1976-01-17 | Hitachi Ltd | SOKOKI |
JPS515277A (en) * | 1974-07-04 | 1976-01-16 | Tatsuo Okazaki | |
DE2435606C3 (en) * | 1974-07-24 | 1979-03-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Series connection of field effect transistors for the realization of a high-ohmic linear resistance |
-
1976
- 1976-05-13 FR FR7615001A patent/FR2351505A1/en active Granted
-
1977
- 1977-04-25 GB GB1702477A patent/GB1517266A/en not_active Expired
- 1977-05-07 DE DE19772720653 patent/DE2720653A1/en active Granted
- 1977-05-10 JP JP5274977A patent/JPS52137988A/en active Granted
- 1977-05-11 IT IT2341877A patent/IT1115304B/en active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0017919A1 (en) * | 1979-04-16 | 1980-10-29 | Fujitsu Limited | Diffused resistor |
US4466013A (en) * | 1982-08-25 | 1984-08-14 | U.S. Philips Corporation | Tapped integrated resistor |
US5111068A (en) * | 1987-03-31 | 1992-05-05 | Kabushiki Kaisha Toshiba | Diffusion resistor circuit |
US8384157B2 (en) | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
US8723294B2 (en) | 2010-10-20 | 2014-05-13 | Asahi Kasei Microdevices Corporation | Resistance element and inverting buffer circuit |
Also Published As
Publication number | Publication date |
---|---|
DE2720653A1 (en) | 1977-12-01 |
DE2720653C2 (en) | 1989-03-16 |
FR2351505B1 (en) | 1979-10-12 |
FR2351505A1 (en) | 1977-12-09 |
IT1115304B (en) | 1986-02-03 |
JPS575059B2 (en) | 1982-01-28 |
JPS52137988A (en) | 1977-11-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19930425 |