GB1270441A - Silicon reactor furnace - Google Patents

Silicon reactor furnace

Info

Publication number
GB1270441A
GB1270441A GB24781/69A GB2478169A GB1270441A GB 1270441 A GB1270441 A GB 1270441A GB 24781/69 A GB24781/69 A GB 24781/69A GB 2478169 A GB2478169 A GB 2478169A GB 1270441 A GB1270441 A GB 1270441A
Authority
GB
United Kingdom
Prior art keywords
rod
panels
chamber
silicon
rods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24781/69A
Inventor
James Reneau Harrison
James Wayne Gilpin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1270441A publication Critical patent/GB1270441A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

1,270,441. Deposition of silicon on silicon; apparatus. TEXAS INSTRUMENTS Inc. 15 May, 1969 [5 June, 1968], No. 24781/69. Heading C1A. In a process for growing rods of a material, such as silicon, which is capable of being grown by vapour deposition on to an elongated rod from a gas circulated over the rod, the material is deposited on a rotating rod of the material suspended within a chamber, by directing a gas over the rod in a direction transverse to the longitudinal axis of the rod at a uniform flow rate at all points on the length of the rod. The rod is preferably supported in a vertical position and rotated by an identical rotatory force at each end to avoid twisting, and the gas enters and leaves the chamber, by front and back foraminous (perforated or porous) panels which are parallel to the filament. In Fig. 1 a reaction chamber 10 comprises parallel front and back foraminous panels 11 and 12 with holes 16, side panels 13 and 14, and a top panel 15 and a bottom panel (not shown). The chamber 10 is enclosed by a jacket 17 of which the panels that are over foraminous panels 11 and 12, form manifolds 18 and 19 and chambers 23 and 24. Jacket 17 also has side panels 25 and 26 and top and bottom panels 28 and 29. The apparatus also incorporates a water-cooled coil 27. A plurality of rods 13 are supported between pairs of opposing chucks 34 at the top and bottom of the apparatus, which chucks extend through seals, to the outside of the apparatus where they all (top and bottom) are interengaged by gear-wheels and linkage, to a driving motor. The chucks are also provided with electrodes (not shown) in order to conduct an electric current through the rods to heat them to the required temperature. The gas passes into the apparatus via header 21 of manifold 18, distributes itself throughout chamber 23 (between 18 and 11) and then passes at a uniform rate through holes 16 of panel 11, across the rods, and leaves via panel 12, chamber 24 and headers 22 (not shown) of manifold 19. The invention is particularly described with reference to silicon, the depositing gas for which, is a mixture of trichlorosilane and hydrogen.
GB24781/69A 1968-06-05 1969-05-15 Silicon reactor furnace Expired GB1270441A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73475968A 1968-06-05 1968-06-05

Publications (1)

Publication Number Publication Date
GB1270441A true GB1270441A (en) 1972-04-12

Family

ID=24952973

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24781/69A Expired GB1270441A (en) 1968-06-05 1969-05-15 Silicon reactor furnace

Country Status (5)

Country Link
US (1) US3635683A (en)
DE (1) DE1927961A1 (en)
FR (1) FR2010175A1 (en)
GB (1) GB1270441A (en)
NL (1) NL6908364A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805736A (en) * 1971-12-27 1974-04-23 Ibm Apparatus for diffusion limited mass transport
US5845189A (en) * 1973-12-20 1998-12-01 Litton Systems, Inc. Process for stabilizing a microchannel plate
US4315968A (en) * 1980-02-06 1982-02-16 Avco Corporation Silicon coated silicon carbide filaments and method
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
US6090202A (en) 1998-04-29 2000-07-18 Sawyer Research Products, Inc. Method and apparatus for growing crystals

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3004866A (en) * 1957-11-04 1961-10-17 Union Carbide Corp Method and apparatus for gas plating nickel films with uniformity of resistance
US2907626A (en) * 1958-01-15 1959-10-06 Bjorksten Res Lab Inc Metal coating of glass fibers at high speeds
NL256017A (en) * 1959-09-23 1900-01-01
NL262949A (en) * 1960-04-02 1900-01-01
US3055741A (en) * 1960-12-22 1962-09-25 Sylvania Electric Prod Method for producing silicon
DE1297086B (en) * 1965-01-29 1969-06-12 Siemens Ag Process for producing a layer of single crystal semiconductor material
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method

Also Published As

Publication number Publication date
FR2010175A1 (en) 1970-02-13
NL6908364A (en) 1969-12-09
US3635683A (en) 1972-01-18
DE1927961A1 (en) 1969-12-11

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