CN210529053U - HFCVD equipment for continuous preparation of diamond film - Google Patents

HFCVD equipment for continuous preparation of diamond film Download PDF

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CN210529053U
CN210529053U CN201921132755.1U CN201921132755U CN210529053U CN 210529053 U CN210529053 U CN 210529053U CN 201921132755 U CN201921132755 U CN 201921132755U CN 210529053 U CN210529053 U CN 210529053U
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chamber
film growth
substrate
hot wire
room
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刘鲁生
姜辛
黄楠
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Institute of Metal Research of CAS
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Institute of Metal Research of CAS
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Abstract

The utility model relates to a diamond film growth field especially relates to a HFCVD equipment that diamond film continuous preparation used. The apparatus mainly comprises: the device comprises a left chamber gate valve, a left film growth chamber, a left chamber water-cooled electrode, a left chamber hot wire frame, a left chamber hot wire, a left chamber driving roller, a left chamber support, a sample inlet and outlet chamber support, a right chamber driving roller, a right chamber hot wire frame, a right chamber water-cooled electrode, a right film growth chamber, a right chamber gate valve, a sample inlet chamber driving roller, a sample inlet and outlet chamber, a substrate table and a substrate walking vehicle. The hot wires are vertically arranged, so that the hot wires are not bent and deformed in the heating and coating processes, the distance from the hot wires to the substrate is stable, the coating quality and the uniformity of the diamond film are improved, the continuous preparation of the diamond film is realized, the carbonized filaments are prevented from breaking, the auxiliary time for re-installing the filaments, vacuumizing, carbonizing the filaments, inflating a vacuum chamber and the like is reduced, and the preparation efficiency of the diamond film is greatly improved.

Description

HFCVD equipment for continuous preparation of diamond film
Technical Field
The utility model relates to a diamond film growth field especially relates to a HFCVD equipment that diamond film continuous preparation used.
Background
The diamond has excellent force, heat, sound, light, electricity, chemistry and other properties, the performance of the artificial diamond film is basically close to that of natural diamond, and the excellent properties enable the artificial diamond film to have wide application prospects in the high-tech field. At present, the diamond film technology is applied to a plurality of occasions such as cutters, high-performance electronic elements, aerospace materials and the like, and has the effect of several numbers, so that people pay more attention to the application of the diamond film technology in the high-tech field. Chemical Vapor Deposition (CVD) diamond films are known as a new coating material with the greatest development prospect in the 21 st century because of their excellent properties such as high hardness, high thermal conductivity, low coefficient of friction, and low coefficient of thermal expansion of natural diamond. The preparation method of the hot wire chemical vapor deposition (HFCVD) diamond film is the main preparation method in the current industrialized CVD diamond film, the method has relatively simple operation and lower cost, the substrate temperature is easy to control, and the diamond film with higher quality and larger area can be obtained.
At present, the following problems mainly exist in the equipment of the preparation method:
1. at present, most of hot wires of HFCVD equipment are horizontally arranged, and the thermal expansion and the denaturation caused by gravity influence the distance from the hot wires to the surface of a substrate, so that the deposition temperature of the surface of the substrate is influenced, the film is not uniform, and the hot wires are easy to break after being carbonized and embrittled.
2. At present, most HFCVD equipment adopts a hot wire for one-time installation, then vacuumizes, carbonizes, coats a film, cools, breaks the vacuum, takes out a substrate, installs the hot wire again, vacuumizes, carbonizes, coats the film, cools, breaks the vacuum, and takes out the substrate. The continuous preparation of the CVD diamond film can not be realized, the production cost is high, and the preparation efficiency is low.
3. At present, most of hot wires of HFCVD equipment are single-wire single-side coated, and the area capable of coating the other side is vacant, so that the coating efficiency is low.
4. At present, the HFCVD equipment adopts one coating chamber or one coating chamber matched with one sampling chamber, the production beat is slow, and the coating efficiency is low.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a HFCVD equipment that diamond film continuous preparation used solves the inhomogeneous of film that exists among the prior art, the hot wire carbonization easily takes place fracture, coating film inefficiency scheduling problem after becoming fragile.
The technical scheme of the utility model is that:
an HFCVD apparatus for continuous production of a diamond film, the apparatus mainly comprising: left side room push-pull valve, left film growth room, left side room water-cooled electrode, left side room hot filament frame, left side room hot filament, left side room driving roller, left side room support, business turn over appearance room support, right side room driving roller, right side room hot filament frame, right side room water-cooled electrode, right side film growth room, right side room push-pull valve, advance appearance room driving roller, business turn over appearance room, substrate platform, substrate walking car, concrete structure as follows:
the device takes the sample inlet and outlet chamber as a center, a substrate walking vehicle is arranged in the sample inlet and outlet chamber, a substrate table is arranged on the substrate walking vehicle, and the substrate is arranged on the substrate table;
the left side of the sample inlet and outlet chamber is connected with a left film growth chamber through a left chamber gate valve, a left chamber water-cooling electrode, a left chamber hot wire frame, a left chamber hot wire and a left transmission roller are sequentially arranged in the left film growth chamber from top to bottom, the left chamber hot wire frame is arranged in parallel from top to bottom, the left chamber hot wire is arranged between the two left chamber hot wire frames in parallel along the vertical plane direction, the left chamber water-cooling electrode is connected with the left chamber hot wire frame, and the left transmission roller is arranged at the bottom in the left film growth chamber;
the right side of the sample inlet and outlet chamber is connected with the right film growth chamber through a right chamber gate valve, a right chamber water-cooling electrode, a right chamber hot wire frame, a right chamber hot wire and a right chamber transmission roller are sequentially arranged in the right film growth chamber from top to bottom, the right film growth chamber is arranged between the two right chamber hot wire frames in an upper and lower relative parallel mode, the right chamber hot wire is arranged between the two right chamber hot wire frames in a parallel mode along the vertical plane direction, the right chamber water-cooling electrode is connected with the right chamber hot wire frame, and the right chamber transmission roller is arranged at the bottom in the right film growth chamber.
The HFCVD equipment for continuously preparing the diamond film is provided with a sample inlet and outlet chamber bracket below the bottom of the sample inlet and outlet chamber.
According to the HFCVD equipment for continuously preparing the diamond film, a left chamber observation window is arranged at the top part in the left film growth chamber, and a left chamber support is arranged below the bottom part of the left film growth chamber.
According to the HFCVD equipment for continuously preparing the diamond film, a right chamber observation window is arranged at the top part in the right film growth chamber, and a right chamber support is arranged below the bottom part of the right film growth chamber.
The HFCVD equipment for continuously preparing the diamond film is characterized in that an electric control system, a vacuum system and a gas circuit system are sequentially arranged on one side of the sample inlet and outlet chamber, the left film growth chamber and the right film growth chamber.
The HFCVD equipment for continuously preparing the diamond film is characterized in that the output end of an electric control system is connected with a left chamber water-cooling electrode, a right chamber water-cooling electrode, a substrate walking vehicle, a vacuum system and an air path system through lines, the vacuum system is respectively connected with a sample inlet and outlet chamber, a left film growth chamber, a right film growth chamber, a left chamber gate valve and a right chamber gate valve through pipelines, and the air path system is respectively connected with the left film growth chamber and the right film growth chamber through pipelines.
The HFCVD equipment for continuously preparing the diamond film is characterized in that a left chamber driving roller, a sample inlet chamber driving roller and a right chamber driving roller are sequentially connected into a row to form a channel matched with a substrate walking vehicle, a pair of substrate tables parallel to each other are arranged on the substrate walking vehicle, a substrate is arranged on each substrate table, heat shields in the sample inlet and outlet chambers are vertically arranged on the opposite inner walls of the sample inlet and outlet chambers respectively, and the substrate walking vehicle is positioned between the two heat shields which are arranged oppositely.
According to the HFCVD equipment for continuously preparing the diamond film, after the substrate walking vehicle enters the left film growth chamber or the right film growth chamber, the two parallel substrates are uniformly distributed on two sides of the left chamber hot wire or the right chamber hot wire.
The HFCVD equipment for continuously preparing the diamond film is characterized in that the sample inlet and outlet chamber, the left film growth chamber and the right film growth chamber are of cuboid double-layer water-cooling structures respectively and are made of SUS304 materials.
The utility model has the advantages of it is following and beneficial effect:
1. the utility model provides a heater adopts perpendicular overall arrangement, can not bending deformation at heating and coating film in-process, and is stable with the base member distance, improves the homogeneity of coating film quality and diamond film.
2. The utility model discloses in have the substrate platform of substrate under the unchangeable prerequisite of left and right film growth room operating condition and send into left and right film growth room in turn through walking the handlebar, realize preparing diamond film in succession, guarantee that the filament after the carbonization is no longer cracked, continuous use reduces the filament consumption, reduces and installs the filament again, auxiliary time such as evacuation, carbonization filament, real empty room are aerifyd, improves the preparation efficiency of diamond film greatly.
3. The utility model discloses be equipped with a pair of substrate platform that is parallel to each other on the substrate walking car, two substrates evenly distribute in the both sides of heater after getting into the film growth room, can two-sided large tracts of land coating film, improve coating film efficiency reduction in production cost.
4. The utility model discloses a control coating film beat flow, a business turn over appearance room corresponds two film growth rooms, makes the substrate after the coating film directly get into the appearance room from the film growth room in high temperature district, and slow cooling under vacuum state effectively eliminates the stress between diamond film and base member, improves the cohesion of diamond film and base member, and another film growth room continues the coating film simultaneously, improves production efficiency.
Drawings
Fig. 1 is a front sectional view of the device of the present invention.
In the figure: 1-left chamber gate valve; 2-left film growth chamber; 3-left chamber water-cooled electrode; 4-left room hot filament frame; 5, heating wires in a left chamber; 6-left chamber driving roller; 7-left ventricle support; 8-sample chamber support; 9-right chamber support; 10-right chamber driving roller; 11-right chamber heater; 12-right chamber hot wire rack; 13-right chamber water cooled electrode; 14-right film growth chamber; 15-right chamber gate valve; 16-a sample chamber driving roller; 17-heat shield; 18-in and out of the sample chamber.
Fig. 2 is a side sectional view of the device of the present invention.
In the figure: 19-a substrate; 20-a substrate table; 21-substrate walking vehicle.
Fig. 3 is a top view of the device of the present invention.
In the figure: 22-an electronic control system; 23-vacuum system; 24-a gas path system; 25-right room observation window; 26-left room viewing window.
FIG. 4 is a flow chart of the continuous film growth process of the present invention.
The specific implementation mode is as follows:
the following describes embodiments of the present invention in further detail with reference to the accompanying drawings and examples. With respect to the detailed description of these embodiments, it is to be understood that one skilled in the art can practice the invention and that other embodiments may be utilized and that changes and/or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In addition, although the specific features of the present invention are disclosed in the embodiments, such specific features may be appropriately modified to achieve the functions of the present invention.
As shown in FIG. 1, FIG. 2 and FIG. 3, the continuous HFCVD apparatus for diamond film production according to the present invention mainly comprises: the device comprises a left chamber gate valve 1, a left film growth chamber 2, a left chamber water-cooled electrode 3, a left chamber hot wire frame 4, a left chamber hot wire 5, a left chamber transmission roller 6, a left chamber support 7, a sample inlet and outlet chamber support 8, a right chamber support 9, a right chamber transmission roller 10, a right chamber hot wire 11, a right chamber hot wire frame 12, a right chamber water-cooled electrode 13, a right film growth chamber 14, a right chamber gate valve 15, a sample inlet chamber transmission roller 16, a heat shield 17, a sample inlet and outlet chamber 18, a substrate 19 (sample), a substrate table 20, a substrate travelling vehicle 21, an electric control system 22, a vacuum system 23, an air circuit system 24, a right chamber observation window 25, a left chamber observation window 26 and the like, and has the specific structure as follows:
the device takes an in-out sample chamber 18 as a center, a heat shield 17 and a substrate walking vehicle 21 are arranged in the in-out sample chamber 18, the heat shield 17 is vertically arranged on the opposite inner walls of the in-out sample chamber 18 respectively, the substrate walking vehicle 21 is positioned between the two oppositely arranged heat shields 17, a substrate table 20 is arranged on the substrate walking vehicle 21, a substrate 19 is arranged on the substrate table 20, and an in-out sample chamber support 8 is arranged below the bottom of the in-out sample chamber 18.
Pass in and out 18 left sides of appearance room and link to each other with left film growth room 2 through left room push-pull valve 1, be equipped with left room observation window 26 from top to bottom in proper order in left film growth room 2, left room water-cooled electrode 3, left room hot filament frame 4, left room hot filament 5 and left driving roller 6, left room hot filament frame 4 is two relative parallel arrangement from top to bottom, left room hot filament 5 is arranged in parallel between two left room hot filament frames 4 along vertical face direction, left room water-cooled electrode 3 links to each other with left room hot filament frame 4, left driving roller 6 sets up the bottom in left film growth room 2, left room observation window 26 sets up the central point of top in left film growth room 2 and puts, adopt embedded welded structure to weld left room observation window 26 on the last casing of left film growth room 2, the bottom below of left film growth room 2 is equipped with left room support 7.
The right side of the sample inlet and outlet chamber 18 is connected with a right film growth chamber 14 through a right chamber gate valve 15, a right chamber observation window 25, a right chamber water-cooled electrode 13, a right chamber hot wire frame 12, a right chamber hot wire 11 and a right chamber transmission roller 10 are sequentially arranged in the right film growth chamber 14 from top to bottom, the right film growth chamber 14 is arranged in an upper-lower relative parallel mode, the right chamber hot wire 11 is arranged between the two right chamber hot wire frames 12 in parallel along the vertical plane direction, the right chamber water-cooled electrode 13 is connected with the right chamber hot wire frame 12, the right chamber transmission roller 10 is arranged at the bottom in the right film growth chamber 14, the right chamber observation window 25 is arranged at the center of the top in the right film growth chamber 14, the left chamber observation window 25 is welded on the upper shell of the right film growth chamber 14 through an embedded welding structure, and a right chamber support 9 is arranged below the bottom of the right film growth chamber 14.
In addition, an electric control system 22, a vacuum system 23 and a gas circuit system 24 are sequentially arranged on one side of the sample inlet/outlet chamber 18, the left film growth chamber 2 and the right film growth chamber 14, wherein: the output end of the electric control system 22 is connected with the left chamber water-cooled electrode 3, the right chamber water-cooled electrode 13, the substrate walking vehicle 21, the vacuum system 23, the gas circuit system 24 and the like through lines to control the operation process of the equipment; the vacuum system 23 is respectively connected with the sample inlet and outlet chamber 18, the left film growth chamber 2, the right film growth chamber 14, the left chamber gate valve 1 and the right chamber gate valve 15 through pipelines, and can respectively vacuumize the sample inlet and outlet chamber 18, the left film growth chamber 2, the right film growth chamber 14, the left chamber gate valve 1 and the right chamber gate valve 15; the gas path system 24 is respectively connected with the left film growth chamber 2 and the right film growth chamber 14 through pipelines, and can accurately input various reaction gases into the left film growth chamber 2 and the right film growth chamber 14.
The left room driving roller 6, the sampling room driving roller 16 and the right room driving roller 10 are sequentially connected into a row to form a channel matched with the substrate walking vehicle 21, a pair of mutually parallel substrate tables 20 are arranged on the substrate walking vehicle 21, a substrate 19 is arranged on each substrate table 20, a heat shield 17 in the sampling room 18 is vertically arranged between the substrate walking vehicle 21 and the inner wall of the sampling room 18, and the heat shield 17 has the following functions: the substrate walking vehicle 21 with higher temperature coming out of the film growth chambers (the left film growth chamber 2 and the right film growth chamber 14) is effectively isolated, and the temperature reduction caused by directly radiating heat to the inner wall of the sample inlet and outlet chamber 18 is avoided. After the substrate walking vehicle 21 enters the film growth chamber (the left film growth chamber 2 or the right film growth chamber 14), the two parallel substrates 19 are uniformly distributed on two sides of the hot wire (the left chamber hot wire 5 or the right chamber hot wire 11), so that the film can be coated on two sides in a large area, the film coating efficiency is improved, and the production cost is reduced.
Business turn over appearance room 18, left film growth room 2, right film growth room 14 are the double-deck water-cooling structure of cuboid respectively, adopt SUS304 material, and double-deck water-cooling structure specifically indicates: the shell is an upper shell and a lower shell, a hollow space is formed between the two shells, and circulating cooling water is filled in the middle of the hollow space.
The present invention will be described in further detail with reference to the following examples.
Examples
As shown in FIG. 4, the coating method of HFCVD equipment used for the continuous production of diamond films according to this example was as follows:
scheme (1): closing the left chamber gate valve 1 and the right chamber gate valve 15, controlling the vacuum system 23 to vacuumize the left film growth chamber 2 and the right film growth chamber 14 to within 20Pa through the electric control system 22, heating the left chamber hot wire 5 and the right chamber hot wire 11 to 2400 ℃, opening the gas circuit system 24 to fill reaction gas into the left film growth chamber 2 and the right film growth chamber 14, and carrying out carbonization treatment on the left chamber hot wire 5 and the right chamber hot wire 11.
Scheme (2): a substrate 19 cleaned in advance is fixed on a substrate table 20, and is put into a sample in/out chamber 18 together with a substrate carriage 21, and the sample in/out chamber 18 is evacuated to within 20 Pa.
Scheme (3): the left chamber gate valve 1 is opened.
Scheme (4): the feed chamber drive roller 16 and the left chamber drive roller 6 are activated to move the substrate travel carriage 21 to the left film growth chamber 2.
Scheme (5): the left chamber gate valve 1 is closed and diamond film growth on the substrate 19 is started.
Scheme (6): a substrate 19 cleaned in advance is fixed on a substrate table 20 and put into the in-out chamber 18 together with a substrate carriage 21, and the in-out chamber 18 is evacuated to within 20 Pa.
Scheme (7): the right chamber gate valve 15 is opened.
Scheme (8): the feed chamber drive roller 16 and the right chamber drive roller 10 are activated to move the substrate traveling carriage 21 to the right film growth chamber 14.
Scheme (9): the right chamber gate valve 15 is closed and diamond film growth on the substrate 19 begins.
Scheme (10): after the growth of the diamond film on the substrate 19 in the left film growth chamber 2 is finished, the left chamber gate valve 1 is opened, the left chamber driving roller 6 and the sampling chamber driving roller 16 are started, and the substrate walking vehicle 21 is moved to the sampling chamber 18.
Scheme (11): the left chamber gate valve 1 is closed.
Scheme (12): the temperature of the substrate 19 is lowered to room temperature while maintaining the vacuum state of the sample outlet chamber 18.
Scheme (13): the vacuum in and out of the sample chamber 18 is released, and the substrate 19 on which the diamond film has grown is taken out.
Scheme (14): a new substrate 19 cleaned in advance is fixed on a substrate table 20 and is placed into the in-out chamber 18 together with a substrate carriage 21, and the in-out chamber 18 is evacuated to within 20 Pa.
Scheme (15): the left chamber gate valve 1 is opened.
Scheme (16): the feed chamber driving roller 16 and the left chamber driving roller 6 are started to move the substrate running carriage 21 to the left film growth chamber 2.
Scheme (17): the left chamber gate valve 1 is closed.
Scheme (18): and after the growth of the diamond film on the substrate 19 in the right film growth chamber 14 is finished, opening the gate valve 15 of the right chamber.
Scheme (19): the right chamber drive roller 10 and the loading chamber drive roller 16 are driven to move the substrate carriage 21 into and out of the loading chamber 18.
Scheme (20): the right chamber gate valve 15 is closed.
Scheme (21): the temperature of the substrate 19 is lowered to room temperature while maintaining the vacuum state of the sample outlet chamber 18.
Thereafter, the flow (6) is entered to start recirculation.
The embodiment result shows that the utility model can be applied to large-scale industrial production and has very high practical value.
What has been described above is merely the preferred embodiment of the present invention. It is to be noted that changes and/or variations may be made in the illustrated examples by those skilled in the art without departing from the spirit of the appended claims and the scope of the principles of the present invention, which should also be construed as within the scope of the claims.

Claims (9)

1. An HFCVD apparatus for continuous production of a diamond film, the apparatus mainly comprising: left side room push-pull valve, left film growth room, left side room water-cooled electrode, left side room hot filament frame, left side room hot filament, left side room driving roller, left side room support, business turn over appearance room support, right side room driving roller, right side room hot filament frame, right side room water-cooled electrode, right side film growth room, right side room push-pull valve, advance appearance room driving roller, business turn over appearance room, substrate platform, substrate walking car, concrete structure as follows:
the device takes the sample inlet and outlet chamber as a center, a substrate walking vehicle is arranged in the sample inlet and outlet chamber, a substrate table is arranged on the substrate walking vehicle, and the substrate is arranged on the substrate table;
the left side of the sample inlet and outlet chamber is connected with a left film growth chamber through a left chamber gate valve, a left chamber water-cooling electrode, a left chamber hot wire frame, a left chamber hot wire and a left transmission roller are sequentially arranged in the left film growth chamber from top to bottom, the left chamber hot wire frame is arranged in parallel from top to bottom, the left chamber hot wire is arranged between the two left chamber hot wire frames in parallel along the vertical plane direction, the left chamber water-cooling electrode is connected with the left chamber hot wire frame, and the left transmission roller is arranged at the bottom in the left film growth chamber;
the right side of the sample inlet and outlet chamber is connected with the right film growth chamber through a right chamber gate valve, a right chamber water-cooling electrode, a right chamber hot wire frame, a right chamber hot wire and a right chamber transmission roller are sequentially arranged in the right film growth chamber from top to bottom, the right film growth chamber is arranged between the two right chamber hot wire frames in an upper and lower relative parallel mode, the right chamber hot wire is arranged between the two right chamber hot wire frames in a parallel mode along the vertical plane direction, the right chamber water-cooling electrode is connected with the right chamber hot wire frame, and the right chamber transmission roller is arranged at the bottom in the right film growth chamber.
2. A HFCVD apparatus for use in continuous production of a diamond film according to claim 1, wherein a holder for the sample-in/out chamber is provided below a bottom of the sample-in/out chamber.
3. A HFCVD apparatus for use in continuous formation of a diamond film according to claim 1, wherein a left chamber observation window is provided at a top portion in the left film growth chamber, and a left chamber support is provided below a bottom portion of the left film growth chamber.
4. A HFCVD apparatus for use in continuous formation of a diamond film according to claim 1, wherein a right chamber observation window is provided at a top portion in the right film growth chamber, and a right chamber holder is provided below a bottom portion of the right film growth chamber.
5. An HFCVD apparatus for use in continuous production of a diamond film according to claim 1, wherein an electric control system, a vacuum system and a gas circuit system are provided in order on one side of the sample introduction chamber, the left film growth chamber and the right film growth chamber.
6. A HFCVD apparatus for use in continuous diamond film production according to claim 5, wherein an output terminal of the electric control system is connected to the left chamber water-cooled electrode, the right chamber water-cooled electrode, the substrate traveling carriage, the vacuum system, and the gas circuit system through lines, the vacuum system is connected to the sample inlet/outlet chamber, the left film growth chamber, the right film growth chamber, the left chamber gate valve, and the right chamber gate valve through lines, respectively, and the gas circuit system is connected to the left film growth chamber and the right film growth chamber through lines, respectively.
7. A HFCVD apparatus for use in continuous production of a diamond film according to claim 1, wherein the left chamber driving roller, the sample introduction chamber driving roller and the right chamber driving roller are connected in sequence in a row to form a passage to be fitted to a substrate running vehicle, the substrate running vehicle is provided with a pair of substrate tables parallel to each other, each of the substrate tables is provided with a substrate, heat shields in and out of the sample introduction chamber are respectively vertically provided on opposite inner walls of the sample introduction chamber and the sample introduction chamber, and the substrate running vehicle is located between the two heat shields which are provided oppositely.
8. A HFCVD apparatus for use in continuous formation of a diamond film according to claim 1, wherein the two parallel substrates are uniformly distributed on both sides of the left chamber hot wire or the right chamber hot wire after the substrate carriage enters the left film growth chamber or the right film growth chamber.
9. The HFCVD apparatus for continuous diamond film production according to claim 1, wherein the sample in-and-out chamber, the left film growth chamber, and the right film growth chamber are each a rectangular parallelepiped double-layer water-cooled structure.
CN201921132755.1U 2019-07-18 2019-07-18 HFCVD equipment for continuous preparation of diamond film Active CN210529053U (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110331378A (en) * 2019-07-18 2019-10-15 中国科学院金属研究所 Diamond thin continuously prepares the HFCVD equipment used and its film plating process
CN111501022A (en) * 2020-06-20 2020-08-07 西南石油大学 Multiunit heater response device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110331378A (en) * 2019-07-18 2019-10-15 中国科学院金属研究所 Diamond thin continuously prepares the HFCVD equipment used and its film plating process
CN110331378B (en) * 2019-07-18 2024-01-19 中国科学院金属研究所 HFCVD equipment for continuous preparation of diamond film and film plating method thereof
CN111501022A (en) * 2020-06-20 2020-08-07 西南石油大学 Multiunit heater response device

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