GB1237586A - Semiconductor switching arrangement - Google Patents
Semiconductor switching arrangementInfo
- Publication number
- GB1237586A GB1237586A GB4408168A GB4408168A GB1237586A GB 1237586 A GB1237586 A GB 1237586A GB 4408168 A GB4408168 A GB 4408168A GB 4408168 A GB4408168 A GB 4408168A GB 1237586 A GB1237586 A GB 1237586A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor switching
- switching arrangement
- regions
- type silicon
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/735—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
Abstract
1,237,586. Integrated circuit. PHILIPS GLOEILAMPENFABRIEKEN N.V. 17 Sept., 1968, No. 44081/68. Heading H1K. [Also in Divisions H3-H5] An integrated circuit comprising a crosspoint circuit (Fig. 2), is formed in an N-type silicon region (301, Fig. 3b, not shown) on an N<SP>+</SP>-type silicon substrate. The electrodes 201, 202 and 203 are formed by metal layers 307, 312 and 310 respectively whilst the diode 204 formed by regions 303 and 306 is connected to Zener diode 205 formed by regions 302 and 305, by the metal layer 315.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6707609A NL157773B (en) | 1967-06-01 | 1967-06-01 | SWITCHING DEVICE OF THE CROSS-POINT TYPE. |
DE19681762886 DE1762886C3 (en) | 1967-06-01 | 1968-09-17 | Circuit arrangement of the cross point type |
GB4408168A GB1237586A (en) | 1967-06-01 | 1968-09-17 | Semiconductor switching arrangement |
FR1595608D FR1595608A (en) | 1967-06-01 | 1968-09-23 | |
BE722944D BE722944A (en) | 1967-06-01 | 1968-10-25 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6707609A NL157773B (en) | 1967-06-01 | 1967-06-01 | SWITCHING DEVICE OF THE CROSS-POINT TYPE. |
DE19681762886 DE1762886C3 (en) | 1967-06-01 | 1968-09-17 | Circuit arrangement of the cross point type |
GB4408168A GB1237586A (en) | 1967-06-01 | 1968-09-17 | Semiconductor switching arrangement |
FR167143 | 1968-09-23 | ||
BE722944 | 1968-10-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1237586A true GB1237586A (en) | 1971-06-30 |
Family
ID=27507702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4408168A Expired GB1237586A (en) | 1967-06-01 | 1968-09-17 | Semiconductor switching arrangement |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE722944A (en) |
DE (1) | DE1762886C3 (en) |
FR (1) | FR1595608A (en) |
GB (1) | GB1237586A (en) |
NL (1) | NL157773B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5340288B2 (en) * | 1973-07-02 | 1978-10-26 | ||
FR2305085A1 (en) * | 1975-03-21 | 1976-10-15 | Thomson Csf | TELEPHONE SWITCHING SYSTEM |
-
1967
- 1967-06-01 NL NL6707609A patent/NL157773B/en unknown
-
1968
- 1968-09-17 DE DE19681762886 patent/DE1762886C3/en not_active Expired
- 1968-09-17 GB GB4408168A patent/GB1237586A/en not_active Expired
- 1968-09-23 FR FR1595608D patent/FR1595608A/fr not_active Expired
- 1968-10-25 BE BE722944D patent/BE722944A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL157773B (en) | 1978-08-15 |
DE1762886B2 (en) | 1975-07-17 |
FR1595608A (en) | 1970-06-15 |
DE1762886A1 (en) | 1970-10-22 |
BE722944A (en) | 1969-04-25 |
NL6707609A (en) | 1968-12-02 |
DE1762886C3 (en) | 1978-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1204759A (en) | Semiconductor switching circuits and integrated devices thereof | |
GB1154892A (en) | Semiconductor Devices | |
GB1234434A (en) | ||
GB1084937A (en) | Transistors | |
GB1162833A (en) | Improvements in Semiconductor Low Voltage Switches | |
GB920229A (en) | Improvements in bistable circuits employing negative resistance devices | |
GB920630A (en) | Improvements in the fabrication of semiconductor elements | |
GB1234294A (en) | ||
IE32763B1 (en) | High speed switching rectifier | |
GB1213636A (en) | Switching circuit | |
GB1194427A (en) | Improvements in Semiconductor Integrated Circuits | |
GB1237586A (en) | Semiconductor switching arrangement | |
GB1106787A (en) | Improvements in semiconductor devices | |
GB1285748A (en) | A semiconductor switching element and a semiconductor switching device involving the same | |
GB1191161A (en) | Integrated Circuits | |
GB1209740A (en) | Transistors | |
GB961159A (en) | Improvements in bistable circuits and compound semiconductor bodies therefor | |
GB1197317A (en) | Semiconductor Integrated Circuit Arrangement | |
GB1480050A (en) | Semiconductor device | |
GB1202253A (en) | All electronic vhf tuner | |
GB1306970A (en) | Semiconductor circuit | |
GB1263817A (en) | Improvements in or relating to integrated circuits | |
GB1173880A (en) | Semiconductor Devices | |
JPS5656663A (en) | Semiconductor device | |
JPS5357775A (en) | Semiconductor ingegrated circuit device |