GB1227546A - - Google Patents
Info
- Publication number
- GB1227546A GB1227546A GB1227546DA GB1227546A GB 1227546 A GB1227546 A GB 1227546A GB 1227546D A GB1227546D A GB 1227546DA GB 1227546 A GB1227546 A GB 1227546A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- parts per
- per million
- coated
- aug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 229910000967 As alloy Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229910001369 Brass Inorganic materials 0.000 abstract 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000010951 brass Substances 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000004033 plastic Substances 0.000 abstract 1
- 229920003023 plastic Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
1,227,546. Vacuum deposition of photoconductive layer. RANK XEROX Ltd. Aug.27, 1968 [Aug.29, 1967], No.40813/68. Heading C7F. [Also in Division H1] A photo-conductive layer 1-300 microns thick is formed by vacuum depositing a Se-As alloy containing 5-900 parts per million of a halogen on to a substrate maintained at 25‹-50‹C. throughout the deposition. The substrate may be Cu, Al, Fe, brass, metallized paper, plastics coated with Al or copper iodide, or glass coated with Cr or tin oxide. The Se-As alloy contains 0À1-50% As, preferably 0À1-2À5%; 10-250 parts per million chlorine, or 35-900 parts per million iodine, or 20-575 parts per million bromine. The substrate may be in the form of a rotating drum which is water cooled to maintain the temperature of 25‹ -50‹ C. and the evaporation boat may be of quartz, molybdenum or stainless steel coated with SiO. The substrate may also be a sheet, web, plate or cylinder and if the coating is formed on an insulating substrate it may be electrostatically charged by moving it between two corona charging devices. The process is used to produce xerographic plates.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66398167A | 1967-08-29 | 1967-08-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1227546A true GB1227546A (en) | 1971-04-07 |
Family
ID=24664016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1227546D Expired GB1227546A (en) | 1967-08-29 | 1968-08-27 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5522783B1 (en) |
BE (1) | BE719980A (en) |
DE (1) | DE1797162C3 (en) |
FR (1) | FR1598952A (en) |
GB (1) | GB1227546A (en) |
NL (1) | NL161271C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2845418A1 (en) * | 1977-10-18 | 1979-05-03 | Stanley Electric Co Ltd | SELENIUM PELLETS FOR USE IN VACUUM DEPOSITION AND PROCESS FOR MANUFACTURING SUCH PELLETS |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2250689C3 (en) * | 1972-10-16 | 1980-09-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Electrophotographic X-ray imaging process |
JPS5492241A (en) * | 1977-12-28 | 1979-07-21 | Canon Inc | Electrophotographic photoreceptor |
JPS55159445A (en) * | 1979-05-31 | 1980-12-11 | Ricoh Co Ltd | Electrophotographic receptor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2654853A (en) * | 1949-02-28 | 1953-10-06 | Rca Corp | Photoelectric apparatus |
DE1672153U (en) * | 1951-12-24 | 1954-02-18 | Zeiss Ikon Ag | RADIATION-SENSITIVE SEMI-CONDUCTOR LAYER MADE OF AMORPHEMIC SELENIUM |
DE898641C (en) * | 1951-12-25 | 1953-12-03 | Zeiss Ikon Ag | Resistance layer made of amorphous selenium |
US2970906A (en) * | 1955-08-05 | 1961-02-07 | Haloid Xerox Inc | Xerographic plate and a process of copy-making |
DE1250737B (en) * | 1963-07-08 | |||
BE704447A (en) * | 1966-10-03 | 1968-02-01 |
-
1968
- 1968-08-21 JP JP5927468A patent/JPS5522783B1/ja active Pending
- 1968-08-23 DE DE1797162A patent/DE1797162C3/en not_active Expired
- 1968-08-26 BE BE719980D patent/BE719980A/xx unknown
- 1968-08-27 GB GB1227546D patent/GB1227546A/en not_active Expired
- 1968-08-29 NL NL6812278.A patent/NL161271C/en not_active IP Right Cessation
- 1968-08-29 FR FR1598952D patent/FR1598952A/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2845418A1 (en) * | 1977-10-18 | 1979-05-03 | Stanley Electric Co Ltd | SELENIUM PELLETS FOR USE IN VACUUM DEPOSITION AND PROCESS FOR MANUFACTURING SUCH PELLETS |
Also Published As
Publication number | Publication date |
---|---|
NL161271C (en) | 1980-01-15 |
NL161271B (en) | 1979-08-15 |
JPS5522783B1 (en) | 1980-06-19 |
FR1598952A (en) | 1970-07-15 |
DE1797162A1 (en) | 1971-07-29 |
DE1797162B2 (en) | 1979-09-20 |
BE719980A (en) | 1969-02-26 |
NL6812278A (en) | 1969-03-04 |
DE1797162C3 (en) | 1985-10-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1193348A (en) | Xerographic Process and Apparatus | |
GB1165579A (en) | Xerographic Plate and Methods of Manufacture. | |
GB755683A (en) | Xerographic plate | |
JPS6340311B2 (en) | ||
JPS5730843A (en) | Electrophotographic receptor | |
JPS55159445A (en) | Electrophotographic receptor | |
JPS57115556A (en) | Photoconductive material | |
US2970906A (en) | Xerographic plate and a process of copy-making | |
GB1285614A (en) | Process for transferring electrostatic charge images | |
GB1227546A (en) | ||
GB1360078A (en) | Ambipolar photoreceptor and method | |
GB1474264A (en) | Direct alpha to x phase conversion of metal containing phthalocyanine | |
GB1073097A (en) | Deformable electrode frost | |
GB1209971A (en) | Photosensitive element | |
GB1309312A (en) | Indium doping | |
US2745327A (en) | Electrophotographic process | |
US3684368A (en) | Xerographic apparatus | |
GB1393612A (en) | Photoreceptor interface | |
GB755486A (en) | Improvements in electrostatic printing | |
GB1226994A (en) | ||
GB1035892A (en) | New and useful improvements in xerographic plate | |
GB1193472A (en) | Xerographic Process | |
GB1480244A (en) | Direct alpha to x phase conversion of metal-free phthalocyanine | |
GB1292425A (en) | Photosensitive glass binder layer comprising photoconductive particles | |
GB1052970A (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |