GB1211354A - Improvements relating to passivated semiconductor devices - Google Patents

Improvements relating to passivated semiconductor devices

Info

Publication number
GB1211354A
GB1211354A GB45670/67A GB4567067A GB1211354A GB 1211354 A GB1211354 A GB 1211354A GB 45670/67 A GB45670/67 A GB 45670/67A GB 4567067 A GB4567067 A GB 4567067A GB 1211354 A GB1211354 A GB 1211354A
Authority
GB
United Kingdom
Prior art keywords
silicon
oxygen
ammonia
nitrogen
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45670/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1211354A publication Critical patent/GB1211354A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1,211,354. Silicon oxynitride coatings. GENERAL ELECTRIC CO. 6 Oct., 1967 [1 Dec., 1966], No. 45670/67. Heading C1A. [Also in Divisions C7 and H1] An insulating protective coating for a semiconductor device comprises a glass including silicon, oxygen, and nitrogen in a solidified amorphous state. The glass (silicon oxynitride) exists as a ternary composition, although it appears from the Specification that it may be desirable to incorporate a small proportion of hydrogen, and its properties would seem to lie between those of silicon dioxide and silicon nitride. Preferred proportional percentages by weight of the constituents are: Si : 46-60%; 0 : 1-50%; N : 1-35%. A preferred method of depositing such a coating on silicon involves the pyrolytic decomposition of a mixture of silane, ammonia and oxygen. The oxygen may be replaced by nitrous oxide or nitric oxide and the ammonia may be used as a carrier gas for the process (in which case about 98% NH 3 is used) or a separate carrier gas such as H 2 may be used. The semi-conductor body is heated by induction heating to a temperature in the range 800-1200‹ C. and the reacting gases are then introduced in suitable proportion. For deposition on germanium or gallium arsenide alternative methods such as glow discharge dissociation of suitable gases at a comparatively low temperature or sputtering silicon in an atmosphere of oxygen and nitrogen, may be preferable.
GB45670/67A 1966-12-01 1967-10-06 Improvements relating to passivated semiconductor devices Expired GB1211354A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59830566A 1966-12-01 1966-12-01

Publications (1)

Publication Number Publication Date
GB1211354A true GB1211354A (en) 1970-11-04

Family

ID=24395041

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45670/67A Expired GB1211354A (en) 1966-12-01 1967-10-06 Improvements relating to passivated semiconductor devices

Country Status (2)

Country Link
DE (1) DE1589866A1 (en)
GB (1) GB1211354A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185626A (en) * 1986-01-16 1987-07-22 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
EP0259826A1 (en) * 1986-09-08 1988-03-16 Nec Corporation Semiconductor device having silicon oxynitride film with improved moisture resistance
FR2799306A1 (en) * 1999-10-04 2001-04-06 Gemplus Card Int IC chip, especially having conductive side faces, is insulated by depositing a low viscosity insulating material on an active face surface portion between connection bumps
GB2371043A (en) * 2000-08-31 2002-07-17 Agere Syst Guardian Corp Low dielectric insulator and semiconductor structures

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022497B2 (en) * 1974-10-26 1985-06-03 ソニー株式会社 semiconductor equipment
JPS59119733A (en) * 1982-12-24 1984-07-11 Toshiba Corp Semiconductor device
DE3542166A1 (en) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh SEMICONDUCTOR COMPONENT

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185626A (en) * 1986-01-16 1987-07-22 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
US4717631A (en) * 1986-01-16 1988-01-05 Rca Corporation Silicon oxynitride passivated semiconductor body and method of making same
GB2185626B (en) * 1986-01-16 1990-03-28 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
EP0259826A1 (en) * 1986-09-08 1988-03-16 Nec Corporation Semiconductor device having silicon oxynitride film with improved moisture resistance
FR2799306A1 (en) * 1999-10-04 2001-04-06 Gemplus Card Int IC chip, especially having conductive side faces, is insulated by depositing a low viscosity insulating material on an active face surface portion between connection bumps
WO2001026151A1 (en) * 1999-10-04 2001-04-12 Gemplus Method for insulating an integrated circuit chip by substance deposit on the active surface
GB2371043A (en) * 2000-08-31 2002-07-17 Agere Syst Guardian Corp Low dielectric insulator and semiconductor structures
GB2371043B (en) * 2000-08-31 2005-05-11 Agere Syst Guardian Corp Low K dielectric insulator and method of forming semiconductor circuit structures

Also Published As

Publication number Publication date
DE1589866A1 (en) 1971-03-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees