GB1204526A - Integrated circuit transistor - Google Patents

Integrated circuit transistor

Info

Publication number
GB1204526A
GB1204526A GB4732467A GB4732467A GB1204526A GB 1204526 A GB1204526 A GB 1204526A GB 4732467 A GB4732467 A GB 4732467A GB 4732467 A GB4732467 A GB 4732467A GB 1204526 A GB1204526 A GB 1204526A
Authority
GB
United Kingdom
Prior art keywords
type
pnp transistor
base
deposited
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4732467A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1204526A publication Critical patent/GB1204526A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1,204,526. Semi-conductor device. THOMSON-CSF. 17 Oct., 1967 [28 Oct., 1966], No. 47324/67. Heading H1K. An integrated circuit comprises complementary NPN and PNP transistors, N<SP>1</SP> 1 +P 1 N 1 and P 2 N 2 (P<SP>111</SP>+P<SP>1</SP>) respectively, on a P-type substrate (P<SP>1</SP>P + ) which serves as the collector for the PNP transistor. The N-type base N 2 of this PNP transistor is deposited on the substrate, and its P-type emitter P 2 is deposited upon this N-type base. A further N-type layer N<SP>1</SP> 2 + is deposited on this emitter to form an NPN further transistor N 2 P 2 N<SP>1</SP> 2 + combined with the PNP transistor and having a low emitter-base junction impedance connecting the PNP transistor base N 2 to the ohmic contact E<SP>1</SP> 2 . Walls P<SP>11</SP>+ isolate the transistors from one another.
GB4732467A 1966-10-28 1967-10-17 Integrated circuit transistor Expired GB1204526A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR81883A FR1504781A (en) 1966-10-28 1966-10-28 New pnp transistor for integrated circuits

Publications (1)

Publication Number Publication Date
GB1204526A true GB1204526A (en) 1970-09-09

Family

ID=8620093

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4732467A Expired GB1204526A (en) 1966-10-28 1967-10-17 Integrated circuit transistor

Country Status (4)

Country Link
DE (1) DE1589643A1 (en)
FR (1) FR1504781A (en)
GB (1) GB1204526A (en)
NL (1) NL6714443A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2031940A5 (en) * 1969-02-13 1970-11-20 Radiotechnique Compelec
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device

Also Published As

Publication number Publication date
DE1589643A1 (en) 1970-04-30
FR1504781A (en) 1967-12-08
NL6714443A (en) 1968-04-29

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee