GB1179877A - A Process for the Crucible-free Zone-by-Zone Melting of a Crystalline Rod - Google Patents

A Process for the Crucible-free Zone-by-Zone Melting of a Crystalline Rod

Info

Publication number
GB1179877A
GB1179877A GB05240/67A GB1524067A GB1179877A GB 1179877 A GB1179877 A GB 1179877A GB 05240/67 A GB05240/67 A GB 05240/67A GB 1524067 A GB1524067 A GB 1524067A GB 1179877 A GB1179877 A GB 1179877A
Authority
GB
United Kingdom
Prior art keywords
zone
current
supporting
melting
induction coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB05240/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1179877A publication Critical patent/GB1179877A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

1,179,877. Zone-melting. SIEMENS A.G. 3 April, 1967 [15 April, 1966], No. 15240/67. Heading B1S. [Also in Division H5] In crucible-free zone-melting of a crystalline rod, the molten zone is supported by the magnetic field of an induction coil supplied with an alternating current wherein the amplitude of the current lying in the frequency range 100 to 300 c/s is less than 5% of the current supplying the supporting field. The rod may be heated by an additional induction coil or by the zone-supporting coil, which may be fed with a low frequency supporting current and a high frequency heating current. The undesired current in the range 100 to 300 c/s is reduced by smoothing the supply voltages of valve or semiconductor generators, or the direct excitation current of machine generators which supply the zone supporting induction coil by conventional filter circuits.
GB05240/67A 1966-04-15 1967-04-03 A Process for the Crucible-free Zone-by-Zone Melting of a Crystalline Rod Expired GB1179877A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0103207 1966-04-15

Publications (1)

Publication Number Publication Date
GB1179877A true GB1179877A (en) 1970-02-04

Family

ID=7524994

Family Applications (1)

Application Number Title Priority Date Filing Date
GB05240/67A Expired GB1179877A (en) 1966-04-15 1967-04-03 A Process for the Crucible-free Zone-by-Zone Melting of a Crystalline Rod

Country Status (3)

Country Link
US (1) US3705789A (en)
DE (1) DE1519888B2 (en)
GB (1) GB1179877A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2356376A1 (en) * 1973-11-12 1975-05-15 Siemens Ag PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION
US3947533A (en) * 1974-06-14 1976-03-30 Biomagnetics, International Inc. Magnetic field expansion and compression method
US5003551A (en) * 1990-05-22 1991-03-26 Inductotherm Corp. Induction melting of metals without a crucible
US5319670A (en) * 1992-07-24 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Velocity damper for electromagnetically levitated materials
US6596076B1 (en) * 1998-06-30 2003-07-22 Director-General Of Agency Of Industrial Science And Technology Apparatus and method for altering the apparent effects of gravity
DE10328859B4 (en) * 2003-06-20 2007-09-27 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Method and apparatus for pulling single crystals by zone pulling
US6875966B1 (en) 2004-03-15 2005-04-05 Nexicor Llc Portable induction heating tool for soldering pipes
DE102018210317A1 (en) * 2018-06-25 2020-01-02 Siltronic Ag Method for producing a single crystal from semiconductor material according to the FZ method, device for carrying out the method and semiconductor wafer made of silicon

Also Published As

Publication number Publication date
DE1519888B2 (en) 1970-04-16
US3705789A (en) 1972-12-12
DE1519888A1 (en) 1969-08-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee