GB1169747A - Improvements in or relating to Sputtering Apparatus - Google Patents
Improvements in or relating to Sputtering ApparatusInfo
- Publication number
- GB1169747A GB1169747A GB3423566A GB3423566A GB1169747A GB 1169747 A GB1169747 A GB 1169747A GB 3423566 A GB3423566 A GB 3423566A GB 3423566 A GB3423566 A GB 3423566A GB 1169747 A GB1169747 A GB 1169747A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- sputtered
- sputtering
- bias
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
1,169,747. R.F. sputtering. EDWARDS HIGH VACUUM INTERNATIONAL Ltd. July 19, 1967 [July 29, 1966], No.34235/66. Heading C7F. In a R.F. sputtering process a pair of non grounded co-planar electrodes associated with the material to be sputtered are mounted in a vacuum chamber, a glow discharge is initiated and a R.F. voltage applied to the electrodes. A magnetic field may be applied near the electrodes and bias sputtering may be effected by means of a second pair of non grounded co-planar electrodes which form part of a carrier for preferably an insulating substrate. A R.F. voltage applied to the second pair is of such a value in relation to the size of these electrodes that the substrate is bias sputtered with an intensity less than that of the sputtering of the source material. The material to be sputtered may be the material of the electrodes or an insulating material e.g. glass coating the electrodes or bridging the electrodes. The electrodes may be round discs, D-shaped, or a round disc surrounded by an annulus. (Registered Trade Mark) "Pyrex" may be sputtered on to lead oxide glass, SiO 2 on to glass and cermets may also be sputtered from a target comprising an insulator with metal strips across its exposed surface. As shown in the figure accompanying the provisional Specification two D-shaped co-planar electrodes 3 and 4 coated with a glass target 7 are attached to a R.F. source and a sputtered deposit is formed on substrate 8 which may rotate above the target 7 and may also be water cooled. Figs. 4, 5 and 6 (not shown) show bias sputtering arrangements, each with two pairs of D-shaped, disc shaped and concentrically arranged coplanar electrodes. In order that the bias sputtering is less intensive than the main sputtering the bias electrodes are tapped on to the secondary of the transformer to give a lower R.F. voltage, a suitable power ratio between main and biased being 10:1. The discharge may be generated and maintained by the R.F. source, or it may be proceeded by an anode cathode system. The R.F. source is between 10 Kc/s and 100 Mc/s to provide an operating voltage 500 Volts to 5 KVolts.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3423566A GB1169747A (en) | 1966-07-29 | 1966-07-29 | Improvements in or relating to Sputtering Apparatus |
| DE19671690684 DE1690684A1 (en) | 1966-07-29 | 1967-07-26 | Method and apparatus for high frequency spraying |
| FR116165A FR1539830A (en) | 1966-07-29 | 1967-07-28 | Method and apparatus for the electroplating of material, as well as products conforming to those obtained |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3423566A GB1169747A (en) | 1966-07-29 | 1966-07-29 | Improvements in or relating to Sputtering Apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1169747A true GB1169747A (en) | 1969-11-05 |
Family
ID=10363112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3423566A Expired GB1169747A (en) | 1966-07-29 | 1966-07-29 | Improvements in or relating to Sputtering Apparatus |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1690684A1 (en) |
| GB (1) | GB1169747A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4116793A (en) * | 1974-12-23 | 1978-09-26 | Telic Corporation | Glow discharge method and apparatus |
| US4591417A (en) * | 1983-12-27 | 1986-05-27 | Ford Motor Company | Tandem deposition of cermets |
| DE3801309A1 (en) * | 1988-01-19 | 1989-07-27 | Leybold Ag | Device for regulating the target DC voltage and the bias DC voltage of sputtering installations |
| GB2396052A (en) * | 2002-05-29 | 2004-06-09 | Visteon Global Tech Inc | Two electrode corona apparatus for plastic throttle body surface treatment |
-
1966
- 1966-07-29 GB GB3423566A patent/GB1169747A/en not_active Expired
-
1967
- 1967-07-26 DE DE19671690684 patent/DE1690684A1/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4116793A (en) * | 1974-12-23 | 1978-09-26 | Telic Corporation | Glow discharge method and apparatus |
| US4591417A (en) * | 1983-12-27 | 1986-05-27 | Ford Motor Company | Tandem deposition of cermets |
| DE3801309A1 (en) * | 1988-01-19 | 1989-07-27 | Leybold Ag | Device for regulating the target DC voltage and the bias DC voltage of sputtering installations |
| GB2396052A (en) * | 2002-05-29 | 2004-06-09 | Visteon Global Tech Inc | Two electrode corona apparatus for plastic throttle body surface treatment |
| GB2396052B (en) * | 2002-05-29 | 2004-11-17 | Visteon Global Tech Inc | Two-electrode corona apparatus and method for plastic throttle body surface treatment |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1690684A1 (en) | 1972-02-03 |
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